稀磁半导体兼具半导体材料和磁性材料的双重特性,是破解摩尔定律难题的方案之一.我们团队通过提出自旋和电荷分别掺杂的机制,研制发现了一类新型稀磁半导体材料,为突破经典稀磁半导体材料自旋和电荷一体掺杂引起的材料制备瓶颈提供了有...稀磁半导体兼具半导体材料和磁性材料的双重特性,是破解摩尔定律难题的方案之一.我们团队通过提出自旋和电荷分别掺杂的机制,研制发现了一类新型稀磁半导体材料,为突破经典稀磁半导体材料自旋和电荷一体掺杂引起的材料制备瓶颈提供了有效解决方案.(Ba,K)(Zn,Mn)2As2(BZA)等新型稀磁半导体通过等价掺杂磁性离子引入自旋、异价非磁性离子掺杂引入电荷,实现了 230 K 的居里温度,刷新了可控型稀磁半导体的居里温度记录.本文重点介绍 1)几种代表性的自旋和电荷掺杂机制分离的新型稀磁半导体的发现与研制;2)新型稀磁半导体的子自旋弛豫与高压物性结构的调控;3)大尺寸单晶生长、基于单晶的安德烈夫异质结研制以及自旋极化率的测量.通过新材料设计研制、综合物性研究、简单原型器件构建的“全链条”模式研究,开拓了自旋电荷分别掺杂的稀磁半导体材料研究领域,展现了这类新型稀磁半导体材料潜在的光明前景.展开更多
A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge ar...A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.展开更多
文摘稀磁半导体兼具半导体材料和磁性材料的双重特性,是破解摩尔定律难题的方案之一.我们团队通过提出自旋和电荷分别掺杂的机制,研制发现了一类新型稀磁半导体材料,为突破经典稀磁半导体材料自旋和电荷一体掺杂引起的材料制备瓶颈提供了有效解决方案.(Ba,K)(Zn,Mn)2As2(BZA)等新型稀磁半导体通过等价掺杂磁性离子引入自旋、异价非磁性离子掺杂引入电荷,实现了 230 K 的居里温度,刷新了可控型稀磁半导体的居里温度记录.本文重点介绍 1)几种代表性的自旋和电荷掺杂机制分离的新型稀磁半导体的发现与研制;2)新型稀磁半导体的子自旋弛豫与高压物性结构的调控;3)大尺寸单晶生长、基于单晶的安德烈夫异质结研制以及自旋极化率的测量.通过新材料设计研制、综合物性研究、简单原型器件构建的“全链条”模式研究,开拓了自旋电荷分别掺杂的稀磁半导体材料研究领域,展现了这类新型稀磁半导体材料潜在的光明前景.
文摘A self-aligned InP/GalnAs single heterojunction bipolar transistor（HBT） is investigated using a novel T-shaped emitter. A U-shaped emitter layout,selective wet etching,laterally etched undercut, and an air-bridge are applied in this process. The device, which has a 2μm×12μm U-shaped emitter area,demonstrates a common-emitter DC current gain of 170,an offset voltage of 0.2V,a knee voltage of 0.5V, and an open-base breakdown voltage of over 2V. The HBT exhibits good microwave performance with a current gain cutoff frequency of 85GHz and a maximum oscillation frequency of 72GHz, These results indicate that these InP/InGaAs SHBTs are suitable for low-voltage,low-power,and high-frequency applications.
