The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain...The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.展开更多
A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupl...A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.展开更多
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a sin...We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.展开更多
The 3-section SG-DBR tunable laser is fabricate d using an ion implantation quantum-well intermixing process.The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.
This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is ...This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.展开更多
An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase curr...An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.展开更多
[Objective] The paper aims to provide references to cultivate I.galbana in a large scale and explore its medical value.[Method] I.galbana had been cultivated in different light-path flat plate bioreactors,and the grow...[Objective] The paper aims to provide references to cultivate I.galbana in a large scale and explore its medical value.[Method] I.galbana had been cultivated in different light-path flat plate bioreactors,and the growth condition and content of organic matter within cells of I.galbana had been analyzed.[Result] Growth rate and volumetric productivity of I.galbana cells increased as light-path of flat plate bioreactors decreased,however,daily areal output rate rose with the increasing of light path.The smaller the light path of flat plate bioreactors was,the more content of total lipids,protein and polysaccharide it had in I.galbana cells.[Conclusion] It is an effective way to improve production efficiently and reduce the cost by selecting the suitable bioreactors.展开更多
A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si...A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.展开更多
The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of...The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.展开更多
文摘The compressively strained InGaAs/InGaAsP quantum well distributed feedback laser with ridge-wave- guide is fabricated at 1.74μm. It is grown by low-pressure metal organic chemical vapor deposition（MOCVD）. A strain buffer layer is used to avoid indium segregation. The threshold current of the device uncoated with length of 300μm is 11.5mA. The maximum output power is 14mW at 100mA. A side mode suppression ratio of 35.5dB is obtained.
文摘A 10Gb/s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback (DFB) semiconductor laser is fabricated using the identical epitaxial layer scheme.Gain-coupling mechanism is employed to improve the single mode yield of the DFB laser,while inductively coupled plasma dry etching technique is utilized to reduce the modulator capacitance.The integrated device exhibits a threshold current as low as 12mA and an extinction ratio over 15dB at -2V bias.The small signal modulation bandwidth is measured to be over 10GHz.The transmission experiment at 10Gb/s indicates a power penalty less than 1dB at a bit-error-rate of 10 -12 after transmission through 35km single mode fiber.
文摘We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.
文摘The 3-section SG-DBR tunable laser is fabricate d using an ion implantation quantum-well intermixing process.The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.
文摘This paper reports on the design,fabrication,and performance of an integrated electro-absorptive modulated laser based on butt-joint configuration for 10Gbit/s application.This paper mainly aims at two aspects.One is to improve the optical coupling between the laser and modulator;another is to increase the bandwidth of such devices by reducing the capacitance parameter of the modulator.The integrated devices exhibit high static and dynamic characteristics. Typical threshold current is 15mA,with some value as low as 8mA.Output power at 100mA is more than 10mW.The extinction characteristics,modulation bandwidth,and electrical return loss are measured.3dB bandwidth more than 10GHz is monitored.
文摘An integratable distributed Bragg reflector laser is fabricated by low energy ion implantation induced quantum well intermixing.A 4 6nm quasi continuous wavelength tuning range is achieved by controlling phase current and grating current simultaneously,and side mode suppression ratio maintains over 30dB throughout the tuning range except a few mode jump points.
基金Supported by National Ministry of Science and Technology Marine‘863’Marine Life Technology Plan Project(2008AA09Z403)Shangdong High School Technological Plan Project(J05I03)~~
文摘[Objective] The paper aims to provide references to cultivate I.galbana in a large scale and explore its medical value.[Method] I.galbana had been cultivated in different light-path flat plate bioreactors,and the growth condition and content of organic matter within cells of I.galbana had been analyzed.[Result] Growth rate and volumetric productivity of I.galbana cells increased as light-path of flat plate bioreactors decreased,however,daily areal output rate rose with the increasing of light path.The smaller the light path of flat plate bioreactors was,the more content of total lipids,protein and polysaccharide it had in I.galbana cells.[Conclusion] It is an effective way to improve production efficiently and reduce the cost by selecting the suitable bioreactors.
文摘A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.
文摘The linewidths of InGaAs-GaAs-AlGaAs DBR lasers with varied DBR dimensional parameters are measured and analyzed. These lasers were built with different DBR grating lengths and depths in order to explore the effect of the size of the DBR on its coupling coefficient and reflectivity,and hence on the linewidth of the laser diodes. The linewidths were measured by employing a self heterodyne linewidth measurement system. The experimental and calculated data for DBR reflectivity and spectral linewidth are given. The relationship between these data and the dimensions of the DBR is analyzed. Based on this analysis,the effect of the DBR geometry on the linewidth of the lasers is explored. The results give useful information related to the design and fabrication of such DBR lasers.
