A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current reference...A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current reference.This generated voltage is insensitive to the changes of external power supply voltage and temperature,while the current reference itself is insensitive to temperature.The circuit is designed in 0.18μm 1.8V standard digital CMOS process.The simulated results show that the performance of the circuit is satisfied.展开更多
Metallic ring-shaped nanotube arrays are proposed and its optical transmission properties are studied by using finite-difference time-domain （FDTD） method. Compared with the transmission spectra of conventional circ...Metallic ring-shaped nanotube arrays are proposed and its optical transmission properties are studied by using finite-difference time-domain （FDTD） method. Compared with the transmission spectra of conventional circular nanotube arrays, two photonic band gaps are emerged in the transmission spectra offing-shaped nanotube arrays, the two band gaps and transmission spectra are adjusted by the length, inner radius, intertube spacing and the dielectric constants of the core and embedding medium, and magnitude modification, redshift and blueshift of the resonance modes are observed. A metallic ring-shaped nanotube arrays for subwavelength band-stop filter in the range of visible light can be achieved. To understand its physical origin, field-interference mechanism was suggested by the field distributions. The proposed nanostructures and results may have great potential applications in subwavelength near-field optics.展开更多
The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of free-standing nanome...The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of free-standing nanomernbranes of the topological crystalline insulators （TCI） SnTe and Pb1-xSnx（Se,Te） are highly tunable by engineering elastic strain and membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We propose a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembranes with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open new avenues for fabricating piezoresistive devices, infrared detectors and energy-efficient electronic and spintronic devices based on TCI nanomembrane.展开更多
The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Severa...The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides （TMDCs） such as WSe2, MoSe2, WS2, and MoS2. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo1-xWxS2 alloy monolayers by the sulfurization of patterned thin films of WO3 and MoO3. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo1-xWxS2 alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo1-xWxS2 alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.11532001,11621062,and 11872329)the Fundamental Research Funds for the Central Universities(No.2016XZZX001-05)+1 种基金the Shenzhen Scientific and Technological Fund for R&D(No.JCYJ20170816172316775),China
文摘A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current reference.This generated voltage is insensitive to the changes of external power supply voltage and temperature,while the current reference itself is insensitive to temperature.The circuit is designed in 0.18μm 1.8V standard digital CMOS process.The simulated results show that the performance of the circuit is satisfied.
基金Projects(11164007,61275174)supported by the National Natural Science Foundation of ChinaProject(20100162110068)supported by the Doctoral Program of Higher Education of China+1 种基金Project(20132BAB212007)supported by the Natural Science Foundation of Jiangxi Province,ChinaProject(GJJ11107)supported by Scientific Foundation of Jiangxi Education Department,China
文摘Metallic ring-shaped nanotube arrays are proposed and its optical transmission properties are studied by using finite-difference time-domain （FDTD） method. Compared with the transmission spectra of conventional circular nanotube arrays, two photonic band gaps are emerged in the transmission spectra offing-shaped nanotube arrays, the two band gaps and transmission spectra are adjusted by the length, inner radius, intertube spacing and the dielectric constants of the core and embedding medium, and magnitude modification, redshift and blueshift of the resonance modes are observed. A metallic ring-shaped nanotube arrays for subwavelength band-stop filter in the range of visible light can be achieved. To understand its physical origin, field-interference mechanism was suggested by the field distributions. The proposed nanostructures and results may have great potential applications in subwavelength near-field optics.
文摘The ability to fine-tune band gap and band inversion in topological materials is highly desirable for the development of novel functional devices. Here we propose that the electronic properties of free-standing nanomernbranes of the topological crystalline insulators （TCI） SnTe and Pb1-xSnx（Se,Te） are highly tunable by engineering elastic strain and membrane thickness, resulting in tunable band gap and giant piezoconductivity. Membrane thickness governs the hybridization of topological electronic states on opposite surfaces, while elastic strain can further modulate the hybridization strength by controlling the penetration length of surface states. We propose a frequency-resolved infrared photodetector using force-concentration induced inhomogeneous elastic strain in TCI nanomembranes with spatially varying width. The predicted tunable band gap accompanied by strong spin-textured electronic states will open new avenues for fabricating piezoresistive devices, infrared detectors and energy-efficient electronic and spintronic devices based on TCI nanomembrane.
文摘The fabrication of heterostructures of two-dimensional semiconductors with specific bandgaps is an important approach to realizing the full potential of these materials in electronic and optoelectronic devices. Several groups have recently reported the direct growth of lateral and vertical heterostructures based on monolayers of typical semiconducting transition metal dichalcogenides （TMDCs） such as WSe2, MoSe2, WS2, and MoS2. Here, we demonstrate the single-step direct growth of lateral and vertical heterostructures based on bandgap-tunable Mo1-xWxS2 alloy monolayers by the sulfurization of patterned thin films of WO3 and MoO3. These patterned films are capable of generating a wide variety of concentration gradients by the diffusion of transition metals during the crystal growth phase. Under high temperatures, this leads to the formation of monolayer crystals of Mo1-xWxS2 alloys with various compositions and bandgaps, depending on the positions of the crystals on the substrates. Heterostructures of these alloys are obtained through stepwise changes in the ratio of W/Mo within a single domain during low-temperature growth. The stabilization of the monolayer Mo1-xWxS2 alloys, which often degrade even under gentle conditions, was accomplished by coating the alloys with other monolayers. The present findings demonstrate an efficient means of both studying and optimizing the optical and electrical properties of TMDC-based heterostructures to allow use of the materials in future device applications.
