The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavele...The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.展开更多
A major challenge in Ga N based solar cell design is the lack of holes compared with electrons in the multiple quantum wells(MQWs). We find that Ga N based MQW photovoltaic devices with five different Mg-doping concen...A major challenge in Ga N based solar cell design is the lack of holes compared with electrons in the multiple quantum wells(MQWs). We find that Ga N based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm-3, 5×1017 cm-3, 2×1018 cm-3, 4×1018 cm-3 and 7×1018 cm-3 in Ga N barriers can lead to different hole concentrations in quantum wells(QWs). However, when the Mg-doping concentration is over 1×1018 cm-3, the crystal quality degrades, which results in the reduction of the external quantum efficiency(EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm-3 exhibits the highest conversion efficiency.展开更多
文摘The influence of DBR in resonant cavity on the characteristics of the reflectivity of InGaAs/GaAs MQW SEED arrays has been discussed. InGaAs/GaAs acting as the active region of MQW SEED to gain 980nm work wavelergth has been introduced. A new resonant cavity structure of the InGaAs/GaAs MQW SEED arrays has been designed and analyzed. The MQW materials grown by MOCVD system have also been measured and analyzed with micro optical spot reflection spectra, PL measurement and X ray measurement. The results of measurement prove the good quality of the wafer and the accuracy of our design and analysis of the structure of the device.
基金supported by the Key Scientific Research Project of Higher Education of Henan Province(No.15A510033)
文摘A major challenge in Ga N based solar cell design is the lack of holes compared with electrons in the multiple quantum wells(MQWs). We find that Ga N based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm-3, 5×1017 cm-3, 2×1018 cm-3, 4×1018 cm-3 and 7×1018 cm-3 in Ga N barriers can lead to different hole concentrations in quantum wells(QWs). However, when the Mg-doping concentration is over 1×1018 cm-3, the crystal quality degrades, which results in the reduction of the external quantum efficiency(EQE), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×1017 cm-3 exhibits the highest conversion efficiency.
