Electrodeposition of Sm-Co alloy in DMF solution was studied by cyclic voltammetry and potentiostatic deposition at room temperature. The results show that small amount of water in a solution of Sm(NO 3) 3+CoCl 2+DMF ...Electrodeposition of Sm-Co alloy in DMF solution was studied by cyclic voltammetry and potentiostatic deposition at room temperature. The results show that small amount of water in a solution of Sm(NO 3) 3+CoCl 2+DMF blocked the electrodeposition of Sm-Co due to the formation of nonconductive Sm(OH) 3 film on the cathode surface. Citric acid could buffer the pH change and inhibit the precipitation of Sm(OH) 3 on the cathode surface which makes the co-deposition of Sm and Co easy. Potentiostatic deposition was carried out on copper electrode in Sm(NO 3) 3+CoCl 2+Citric acid+DMF solution and Sm-Co alloy films were obtained where the content of Sm could be as high as 57 56%.展开更多
采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-...采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-vis及PEC等手段对薄膜样品进行表征以及光电化学性能测试。结果表明:负载rGO使得rGO-Sb_(2)Se_(3)在700 nm以内的可见光区域的光吸收系数显著提升。rGO优良的导电性能及较高的载流子迁移率,可以快速转移电荷,抑制载流子的复合,因此光电化学性能以及光稳定性大大提高,光电流密度增大至接近Sb_(2)Se_(3)单相的2倍(−0.20 mA/cm^(2))。又因为rGO-Sb_(2)Se_(3)导带位置(−0.74 V vs.RHE)远负于析氢电位(0 V vs.RHE),故可作为一种新型光还原产氢的阴极,具备广阔的应用前景。展开更多
文摘Electrodeposition of Sm-Co alloy in DMF solution was studied by cyclic voltammetry and potentiostatic deposition at room temperature. The results show that small amount of water in a solution of Sm(NO 3) 3+CoCl 2+DMF blocked the electrodeposition of Sm-Co due to the formation of nonconductive Sm(OH) 3 film on the cathode surface. Citric acid could buffer the pH change and inhibit the precipitation of Sm(OH) 3 on the cathode surface which makes the co-deposition of Sm and Co easy. Potentiostatic deposition was carried out on copper electrode in Sm(NO 3) 3+CoCl 2+Citric acid+DMF solution and Sm-Co alloy films were obtained where the content of Sm could be as high as 57 56%.
文摘采用恒电位沉积法,在二元Sb-GO溶液体系中得到rGO-Sb预制层,在此过程中,GO被有效还原成rGO,并与Sb形成化学键。随后通过将预制层进行二段硒化热处理,快速去除多余的Se制备出rGO-Sb_(2)Se_(3)光阴极薄膜。通过XRD、SEM、Raman、XPS、UV-vis及PEC等手段对薄膜样品进行表征以及光电化学性能测试。结果表明:负载rGO使得rGO-Sb_(2)Se_(3)在700 nm以内的可见光区域的光吸收系数显著提升。rGO优良的导电性能及较高的载流子迁移率,可以快速转移电荷,抑制载流子的复合,因此光电化学性能以及光稳定性大大提高,光电流密度增大至接近Sb_(2)Se_(3)单相的2倍(−0.20 mA/cm^(2))。又因为rGO-Sb_(2)Se_(3)导带位置(−0.74 V vs.RHE)远负于析氢电位(0 V vs.RHE),故可作为一种新型光还原产氢的阴极,具备广阔的应用前景。