A p-i-i-n type AlG a N heterostructure avalanche photodiodes(APDs)is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlG aN layer as multiplication layer and lo...A p-i-i-n type AlG a N heterostructure avalanche photodiodes(APDs)is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlG aN layer as multiplication layer and low-Al-content AlG aN layer as absorption layer.The calculated results show that the designed APD can significantly reduce the breakdown voltage by almost 30%,and about sevenfold increase of maximum gain compared to the conventional Al GaN APD.The noise in designed APD is also less than that in conventional APD due to its low dark current at the breakdown voltage point.Moreover,the one-dimensional(1D)dual-periodic photonic crystal(PC)with anti-reflection coating filter is designed to achieve the solar-blind characteristic and cutoff wavelength of 282 nm is obtained.展开更多
EE Times日前报道：IBM、Rohm＆Haas电子材料部日前签署了一项共同开发协议，针对目前光刻技术的主要问题，为32nm及以下节点设计开发新型抗反射材料。双方计划开发全新248nm和193nm波长材料，包括底部抗反射涂层（BARC）和顶端抗发射...EE Times日前报道：IBM、Rohm＆Haas电子材料部日前签署了一项共同开发协议，针对目前光刻技术的主要问题，为32nm及以下节点设计开发新型抗反射材料。双方计划开发全新248nm和193nm波长材料，包括底部抗反射涂层（BARC）和顶端抗发射涂层（TARC）。展开更多
基金supported by Anhui University Natural Science Research Project, China (KJ2015A153)Initial research fund from Chuzhou University, China (2014qd024)+1 种基金The Higher Education Excellent Youth Talents Foundation of Anhui Province (gxyqZ D2016329)the Anhui Provincial Natural Science Foundation of China under Grant (1708085MF149)
文摘A p-i-i-n type AlG a N heterostructure avalanche photodiodes(APDs)is proposed to decrease the avalanche breakdown voltage and to realize higher gain by using high-Al-content AlG aN layer as multiplication layer and low-Al-content AlG aN layer as absorption layer.The calculated results show that the designed APD can significantly reduce the breakdown voltage by almost 30%,and about sevenfold increase of maximum gain compared to the conventional Al GaN APD.The noise in designed APD is also less than that in conventional APD due to its low dark current at the breakdown voltage point.Moreover,the one-dimensional(1D)dual-periodic photonic crystal(PC)with anti-reflection coating filter is designed to achieve the solar-blind characteristic and cutoff wavelength of 282 nm is obtained.
