An ultra-low-power,256-bit EEPROM is designed and implemented in a Chartered 0.35μm EEPROM process. The read state power consumption is optimized using a new sense amplifier structure and an optimized control circuit...An ultra-low-power,256-bit EEPROM is designed and implemented in a Chartered 0.35μm EEPROM process. The read state power consumption is optimized using a new sense amplifier structure and an optimized control circuit. Block programming/erasing is achieved using an improved control circuit. An on silicon program/erase/read access time measurement design is given. For a power supply voltage of 1.8V,an average power consumption of 68 and 0.6μA for the program/erase and read operations,respectively,can be achieved at 640kHz.展开更多
Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed wit...Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new ,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz.展开更多
By analyzing the principle of dual-pump parametric amplification and the polarization dependent gain of fiber optical parametric amplifier(FOPA),a polarization-insensitive FOPA based on polarization-diversity techniqu...By analyzing the principle of dual-pump parametric amplification and the polarization dependent gain of fiber optical parametric amplifier(FOPA),a polarization-insensitive FOPA based on polarization-diversity technique with dual parallel pumps is presented.The performances of polarization-insensitivity,gain and BER are theoretically analyzed and numerically simulated by comparing the proposed scheme with parallel pump solution and orthogonal pump solution.The presented solution can reduce the complexity of state of polarization(SoP) of pumps.展开更多
文摘An ultra-low-power,256-bit EEPROM is designed and implemented in a Chartered 0.35μm EEPROM process. The read state power consumption is optimized using a new sense amplifier structure and an optimized control circuit. Block programming/erasing is achieved using an improved control circuit. An on silicon program/erase/read access time measurement design is given. For a power supply voltage of 1.8V,an average power consumption of 68 and 0.6μA for the program/erase and read operations,respectively,can be achieved at 640kHz.
文摘Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new ,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz.
基金supported by the National Basic Research Program of China (2010CB328304)
文摘By analyzing the principle of dual-pump parametric amplification and the polarization dependent gain of fiber optical parametric amplifier(FOPA),a polarization-insensitive FOPA based on polarization-diversity technique with dual parallel pumps is presented.The performances of polarization-insensitivity,gain and BER are theoretically analyzed and numerically simulated by comparing the proposed scheme with parallel pump solution and orthogonal pump solution.The presented solution can reduce the complexity of state of polarization(SoP) of pumps.
