To clarify the precipitation of silica hydrate from the real desilication solutions of aluminosilicate solid wastes by adding seeds and improve integrated waste utilization,the seeded precipitation was studied using s...To clarify the precipitation of silica hydrate from the real desilication solutions of aluminosilicate solid wastes by adding seeds and improve integrated waste utilization,the seeded precipitation was studied using synthesized sodium silicate solution containing different inorganic salt impurities.The results show that sodium chloride,sodium sulfate,sodium carbonate,or calcium chloride can change the siloxy group structure.The number of high-polymeric siloxy groups decreases with increasing sodium chloride or sodium sulfate concentration,which is detrimental to seeded precipitation.Calcium chloride favors the polymerization of silicate ions,and even the chain groups precipitate with the precipitation of high-polymeric sheet and cage-like siloxy groups.The introduced sodium cations in sodium carbonate render a more open network structure of high-polymeric siloxy groups,although the carbonate ions favor the polymerization of siloxy groups.No matter how the four impurities affect the siloxy group structure,the precipitates are always amorphous opal-A silica hydrate.展开更多
Gas blowing is a valid method to remove the impurities from metallurgical grade silicon（MG-Si） melt.The thermodynamic behavior of impurities Fe,Al,Ca,Ti,Cu,C,B and P in MG-Si was studied in the process of O2 blowing...Gas blowing is a valid method to remove the impurities from metallurgical grade silicon（MG-Si） melt.The thermodynamic behavior of impurities Fe,Al,Ca,Ti,Cu,C,B and P in MG-Si was studied in the process of O2 blowing.The removal efficiencies of impurities in MG-Si were investigated using O2 blowing in ladle.It is found that the removal efficiencies are higher than 90% for Ca and Al and nearly 50% for B and Ti.The morphology of inclusions was analyzed and the phases Al3Ni,NiSi2 and Al3Ni were confirmed in MG-Si by X-ray diffraction.It was found that SiB4 exists in Si？B binary system.The chemical composition of inclusions in MG-Si before and after refining was analyzed by SEM-EDS.It is found that the amount of white inclusion reduces for the removal of most Al and Ca in the forms of molten slag inclusion and the contents of Fe,Ni and Mn in inclusion increase for their inertia in silicon melt with O2 blowing.展开更多
The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively couple...The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.展开更多
The hole mobility of strained silicon along the <110> orientation on (001) Si1?xGex is obtained by solving collision term in the Boltzmann transport equation. The analytical model is proposed that considers the ...The hole mobility of strained silicon along the <110> orientation on (001) Si1?xGex is obtained by solving collision term in the Boltzmann transport equation. The analytical model is proposed that considers the effect of strain-induced splitting at valence band valleys in silicon, doping dependence and three scattering mechanisms, i.e., ionized impurity scattering, acoustic phonon scattering and non-polar optical phonon scattering. The hole occupancy at top band indicates a non-monotonic variation under biaxial tensile strain at low temperature (77 K). What's more, a non-monotonic variation of hole mobility at room temperature (300 K) is presented. Compared with the room temperature hole mobility, the low temperature hole mobility is affected greatly by ionized impurity scattering at lower impurity concentration. At the same time, the room temperature hole mobility is lower than that of electron with the same germanium content and doping concentration. If the parameters are correctly chosen, the model can also be used to calculate the hole mobility of other crystal faces with arbitrary orientation. So, it lays a useful foundation for strained silicon devices and circuits.展开更多
基金financial support from the National Natural Science Foundation of China(No.52074364)。
文摘To clarify the precipitation of silica hydrate from the real desilication solutions of aluminosilicate solid wastes by adding seeds and improve integrated waste utilization,the seeded precipitation was studied using synthesized sodium silicate solution containing different inorganic salt impurities.The results show that sodium chloride,sodium sulfate,sodium carbonate,or calcium chloride can change the siloxy group structure.The number of high-polymeric siloxy groups decreases with increasing sodium chloride or sodium sulfate concentration,which is detrimental to seeded precipitation.Calcium chloride favors the polymerization of silicate ions,and even the chain groups precipitate with the precipitation of high-polymeric sheet and cage-like siloxy groups.The introduced sodium cations in sodium carbonate render a more open network structure of high-polymeric siloxy groups,although the carbonate ions favor the polymerization of siloxy groups.No matter how the four impurities affect the siloxy group structure,the precipitates are always amorphous opal-A silica hydrate.
基金Projects(51104080,u1137601) supported by the National Natural Science Foundation of ChinaProject(2009CD027) supported by the Natural Science Foundation of Yunnan Province,ChinaProject(14118557) supported by the Personnel Training Foundation of Kunming University of Science and Technology,China
文摘Gas blowing is a valid method to remove the impurities from metallurgical grade silicon（MG-Si） melt.The thermodynamic behavior of impurities Fe,Al,Ca,Ti,Cu,C,B and P in MG-Si was studied in the process of O2 blowing.The removal efficiencies of impurities in MG-Si were investigated using O2 blowing in ladle.It is found that the removal efficiencies are higher than 90% for Ca and Al and nearly 50% for B and Ti.The morphology of inclusions was analyzed and the phases Al3Ni,NiSi2 and Al3Ni were confirmed in MG-Si by X-ray diffraction.It was found that SiB4 exists in Si？B binary system.The chemical composition of inclusions in MG-Si before and after refining was analyzed by SEM-EDS.It is found that the amount of white inclusion reduces for the removal of most Al and Ca in the forms of molten slag inclusion and the contents of Fe,Ni and Mn in inclusion increase for their inertia in silicon melt with O2 blowing.
基金Projects (60906002, 50832006) supported by the National Natural Science Foundation of ChinaProject (2009QNA4007) supported by the Fundamental Research Funds for the Central Universities, China
文摘The precipitation and gettering behaviors of copper （Cu） at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at the defects and form precipitates heterogeneously in the high density defect region. In the case of heavy contamination, the Cu precipitate can significantly reduce the carrier lifetime of multicrystalline silicon due to their Schottkydiode behavior in the silicon substrate. A 900 °C rap thermal process （RTP） phosphorus gettering anneal cannot be sufficiently effective to remove the Cu precipitates in these two regions.
基金supported by the National Ministries and Commissions (Grant Nos. 51308040203, 9140A08060407DZ0103 and 6139801)
文摘The hole mobility of strained silicon along the <110> orientation on (001) Si1?xGex is obtained by solving collision term in the Boltzmann transport equation. The analytical model is proposed that considers the effect of strain-induced splitting at valence band valleys in silicon, doping dependence and three scattering mechanisms, i.e., ionized impurity scattering, acoustic phonon scattering and non-polar optical phonon scattering. The hole occupancy at top band indicates a non-monotonic variation under biaxial tensile strain at low temperature (77 K). What's more, a non-monotonic variation of hole mobility at room temperature (300 K) is presented. Compared with the room temperature hole mobility, the low temperature hole mobility is affected greatly by ionized impurity scattering at lower impurity concentration. At the same time, the room temperature hole mobility is lower than that of electron with the same germanium content and doping concentration. If the parameters are correctly chosen, the model can also be used to calculate the hole mobility of other crystal faces with arbitrary orientation. So, it lays a useful foundation for strained silicon devices and circuits.
