A new method of preparing thin film metal-hydride electrodes for metal-hydride batteries is described. The method consists of simultaneous deposition of multi-component metallic species onto a substrate while bombardi...A new method of preparing thin film metal-hydride electrodes for metal-hydride batteries is described. The method consists of simultaneous deposition of multi-component metallic species onto a substrate while bombarding the growing, deposited thin film electrode with a low energy hydrogen ion beam An amorphous LaNi4 hydride thin film electrode has been prepared by this Hydrogen Ion Beam Assisted Deposition （HIBAD） technique. The electrochemical discharge capacity and cycle life of this electrode in a 6 M KOH solution surpass previously reported values for La-Ni thin film electrodes prepared by other deposition methods.展开更多
Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphe...Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphene transistors and further explore the resistance limit between graphene and metal contacts. The Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level both on mechanically exfoliated and chemical-vapor-deposition graphene by adopting high-purity palladium and high-quality graphene and controlling the fabrication process to not contaminate the interface. After excluding the parasitic series resistances from the measurement system and electrodes, the retrieved contact resistance is shown to be systematically and statistically less than 100 Ω·μm, with a minimum value of 69 Ω·μm, which is very close to the theoretical limit. Furthermore, the contact resistance shows no clear dependence on temperature in the range of 77-300 K; this is attributed to the saturation of carrier injection efficiency between graphene and Pd owing to the high quality of the graphene samples used, which have a sufficiently long carrier mean-free-path.展开更多
When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resista...When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resistance states in a ferromagnet/graphene/ferromagnet junction. Here, we report manifest spin valve effects from room temperature to 10 K in junctions comprising NiFe electrodes and an interlayer made of double-layer or single-layer graphene grown by chemical vapor deposition. We have found that the spin valve effect is stronger with double-layer graphene than with single-layer graphene. The ratio of relative magnetoresistance increases from 0.09% at room temperature to 0.14% at 10 K for single-layer graphene and from 0.27% at room temperature to 0.48% at 10 K for double-layer graphene. The spin valve effect is perceived to retain the spin-polarized transport in the vertical direction and the hysteretic nature of magnetoresistance provides the basic functionality of a memory device. We have also found that the junction resistance decreases monotonically as temperature is lowered and the current-voltage characteristics show linear behaviour. These results revealed that a graphene interlayer works not as a tunnel barrier but rather as a conducting thin film between two NiFe electrodes.展开更多
文摘A new method of preparing thin film metal-hydride electrodes for metal-hydride batteries is described. The method consists of simultaneous deposition of multi-component metallic species onto a substrate while bombarding the growing, deposited thin film electrode with a low energy hydrogen ion beam An amorphous LaNi4 hydride thin film electrode has been prepared by this Hydrogen Ion Beam Assisted Deposition （HIBAD） technique. The electrochemical discharge capacity and cycle life of this electrode in a 6 M KOH solution surpass previously reported values for La-Ni thin film electrodes prepared by other deposition methods.
基金This work was supported by the Ministry of Sdence and Technology of China （Grant Nos. 2011CB933001 and 2011CB933002）, National Natural Science Foundation of China （Grant Nos. 61322105, 61271051, 61321001, and 61390504）, and Beijing Municipal Science and Technology Commission （Grant Nos. Z131100003213021 and D141100000614001）.
文摘Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphene transistors and further explore the resistance limit between graphene and metal contacts. The Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level both on mechanically exfoliated and chemical-vapor-deposition graphene by adopting high-purity palladium and high-quality graphene and controlling the fabrication process to not contaminate the interface. After excluding the parasitic series resistances from the measurement system and electrodes, the retrieved contact resistance is shown to be systematically and statistically less than 100 Ω·μm, with a minimum value of 69 Ω·μm, which is very close to the theoretical limit. Furthermore, the contact resistance shows no clear dependence on temperature in the range of 77-300 K; this is attributed to the saturation of carrier injection efficiency between graphene and Pd owing to the high quality of the graphene samples used, which have a sufficiently long carrier mean-free-path.
文摘When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resistance states in a ferromagnet/graphene/ferromagnet junction. Here, we report manifest spin valve effects from room temperature to 10 K in junctions comprising NiFe electrodes and an interlayer made of double-layer or single-layer graphene grown by chemical vapor deposition. We have found that the spin valve effect is stronger with double-layer graphene than with single-layer graphene. The ratio of relative magnetoresistance increases from 0.09% at room temperature to 0.14% at 10 K for single-layer graphene and from 0.27% at room temperature to 0.48% at 10 K for double-layer graphene. The spin valve effect is perceived to retain the spin-polarized transport in the vertical direction and the hysteretic nature of magnetoresistance provides the basic functionality of a memory device. We have also found that the junction resistance decreases monotonically as temperature is lowered and the current-voltage characteristics show linear behaviour. These results revealed that a graphene interlayer works not as a tunnel barrier but rather as a conducting thin film between two NiFe electrodes.
