以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。...以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。研究发现重离子入射会引起器件的亚阈值电流增大,导致阈值电压负向漂移,且负栅压下器件的亚阈值电压负向漂移更严重。试验结果结合TCAD仿真进一步揭示在栅氧化层侧墙处Si/SiO_(2)界面的带正电的氧化物陷阱电荷是导致器件阈值电压和亚阈值电压等参数退化的主要原因。研究结果可为SGT MOSFET单粒子微剂量效应评估和建模提供指导。展开更多
A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
文摘以屏蔽栅沟槽(SGT)MOSFET为研究对象,研究了重离子诱发的单粒子微剂量效应的现象及物理机理。对不同偏置电压下的30 V SGT MOSFET进行重离子辐照试验,分析了重离子轰击后器件转移特性曲线的变化趋势,揭示单粒子微剂量效应的退化规律。研究发现重离子入射会引起器件的亚阈值电流增大,导致阈值电压负向漂移,且负栅压下器件的亚阈值电压负向漂移更严重。试验结果结合TCAD仿真进一步揭示在栅氧化层侧墙处Si/SiO_(2)界面的带正电的氧化物陷阱电荷是导致器件阈值电压和亚阈值电压等参数退化的主要原因。研究结果可为SGT MOSFET单粒子微剂量效应评估和建模提供指导。
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
