露天矿外部沟沟道深度优化

为了优化露天矿运输系统缩短运距,对外部沟沟道深度进行详细研究;分析了外部沟的特点及影响外部沟设置的因素;通过研究外部沟沟道设置的位置,以及采剥工程量运距、外部沟掘沟工程量与外部沟沟道深度之间的关系,运用费用补偿法建立数学模型,确定经济合理的外部沟沟道深度。以神华宝日希勒能源有限公司露天煤矿为例,确定外部沟道设置在不同位置时的外部沟沟道最佳深度,经济效益显著。

基于微细加工技术的高精度荧光检测生物芯片

荧光检测生物芯片在生命科学研究及诸多相关领域已经得到了广泛应用。利用荧光修饰核酸探针可以在液相态中检测到c-fos mRNA致癌基因信息或病毒性核糖核酸(RNA)。通过微细加工技术分别制造了变深度微沟道和变宽度微沟道,目的是找到微生物荧光检测芯片中的最佳检测宽度和深度,并对检测装置中光学滤波片进行了优化。芯片采用最优尺寸和装置采用优化过的荧光滤波片,不仅大幅缩短了检测时间,节省了荧光探针试剂,而且还提高了芯片荧光检测灵敏度。实验结果表明:当荧光检测系统的微沟道深度为500μm、宽度为200μm,并使用(480±15)nm的带通滤波片时,荧光修饰核酸探针的探测灵敏度从通常的20 fmol(即2×10-14 mol)减低到50 amol(即5×10-17 mol),提高了约400倍,大大提高了系统的检测精度。

Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects

The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.The non uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones.Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects.This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.However,it becomes independent on channel depth in strong inversion region,which is in accordance with numerical analysis.It is also concluded that the QM model,which barely considers a box like potential in the channel,slightly over predicts threshold voltage and underestimates electron density,and the error increases with an increasing channel depth or a decreasing gate oxide thickness.