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Asymptotic of the Solutions to the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors 被引量:1
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作者 WANGWen-bin LIUShu-mei 《Chinese Quarterly Journal of Mathematics》 CSCD 北大核心 2005年第2期185-191,共7页
In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and init... In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity. 展开更多
关键词 drift diffusion equations initial boundary value problems asymptotic behavior
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Weak solutions to one-dimensional quantum drift-diffusion equations for semiconductors
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作者 蒋卫祥 管平 《Journal of Southeast University(English Edition)》 EI CAS 2006年第4期577-581,共5页
The weak solutions to the stationary quantum drift-diffusion equations (QDD) for semiconductor devices are investigated in one space dimension. The proofs are based on a reformulation of the system as a fourth-order... The weak solutions to the stationary quantum drift-diffusion equations (QDD) for semiconductor devices are investigated in one space dimension. The proofs are based on a reformulation of the system as a fourth-order elliptic boundary value problem by using an exponential variable transformation. The techniques of a priori estimates and Leray-Schauder's fixed-point theorem are employed to prove the existence. Furthermore, the uniqueness of solutions and the semiclassical limit δ→0 from QDD to the classical drift-diffusion (DD) model are studied. 展开更多
关键词 semiconductor device quantum drift-diffusion equations existence and uniqueness exponential variable transformation semiclassical limit
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