lmprovement of the charge separation of titanosilicate molecular sieves is critical to their use asphotocatalysts for oxidative organic transformations.In this work,MFI TS-1 molecular sievenanosheets(TS-1 NS)were synt...lmprovement of the charge separation of titanosilicate molecular sieves is critical to their use asphotocatalysts for oxidative organic transformations.In this work,MFI TS-1 molecular sievenanosheets(TS-1 NS)were synthesized by a low-temperature hydrothermal method using a tai-lored diquaternary ammonium surfactant as the structure-directing agent.Introducing Ni^2+cationsat the ion-exchange sites of the TS-1 NS framework significantly enhanced its photoactivity in aero-bic alcohol oxidation.The optimized Ni cation-functionalized TS-1 NS(Ni/TS-1 NS)provide impres-sive photoactivity,with a benzyl alcohol(BA)conversion of 78.9%and benzyl aldehyde(BAD)se-lectivity of 98.8%using O as the only oxidant under full light irradiation;this BAD yield is approx-imately six times greater than that obtained for bulk TS-1,and is maintained for five runs.The ex-cellent photoactivity of Ni/TS-1 NS is attributed to the significantly enlarged surface area of thetwo-dimensional morphology TS-1 NS,extra mesopores,and greatly improved charge separation.Compared with bulk TS-1,Ni/TS-1 NS has a much shorter charge transfer distance.Theas-introduced Ni species could capture the photoelectrons to further improve the charge separa-tion.This work opens the way to a class of highly selective,robust,and low-cost titanosilicate mo-lecular sieve-based photocatalysts with industrial potential for selective oxidative transformationsand pollutant degradation.展开更多
We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850...We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850°C/60 s and 1050°C/60 s, respectively. The 1050°C annealed capacitor could be programmed and erased normally by using Fowler-Nordheim (FN) injection. In contrast, the 850°C annealed device could not be erased, even though it could be programmed properly. By measuring the gate leakage current and the flatband voltage shift, we found the erase failure in the 850°C annealed device was due to a larger gate back-injection leakage current at Vg<0. The trend of gate leakage current was further verified in two Al/Al2O3/SiO2/p-Si control capacitors with the same PDA splits. In addition, constant voltage stress measurements on control capacitors in the FN regime showed that the change of gate leakage current followed an empirical Curie-von Schweidler law at Vg<0. The data pointed out the importance to further study the relation between PDA conditions and the defect generation properties in Al2O3 blocking layer.展开更多
文摘lmprovement of the charge separation of titanosilicate molecular sieves is critical to their use asphotocatalysts for oxidative organic transformations.In this work,MFI TS-1 molecular sievenanosheets(TS-1 NS)were synthesized by a low-temperature hydrothermal method using a tai-lored diquaternary ammonium surfactant as the structure-directing agent.Introducing Ni^2+cationsat the ion-exchange sites of the TS-1 NS framework significantly enhanced its photoactivity in aero-bic alcohol oxidation.The optimized Ni cation-functionalized TS-1 NS(Ni/TS-1 NS)provide impres-sive photoactivity,with a benzyl alcohol(BA)conversion of 78.9%and benzyl aldehyde(BAD)se-lectivity of 98.8%using O as the only oxidant under full light irradiation;this BAD yield is approx-imately six times greater than that obtained for bulk TS-1,and is maintained for five runs.The ex-cellent photoactivity of Ni/TS-1 NS is attributed to the significantly enlarged surface area of thetwo-dimensional morphology TS-1 NS,extra mesopores,and greatly improved charge separation.Compared with bulk TS-1,Ni/TS-1 NS has a much shorter charge transfer distance.Theas-introduced Ni species could capture the photoelectrons to further improve the charge separa-tion.This work opens the way to a class of highly selective,robust,and low-cost titanosilicate mo-lecular sieve-based photocatalysts with industrial potential for selective oxidative transformationsand pollutant degradation.
基金supported by the MOST (Grant Nos. 2010CB934200,2011CBA00600)the National Natural Science Foundation of China (Grant Nos. 60825403,61176073)+1 种基金the Director's Fund of IMECASthe National Science and Technology Major Project of China (Grant No.2009ZX02023-005)
文摘We have investigated the effect of post deposition annealing (PDA) temperature of Al2O3 blocking layer on the performance of charge trapping memory capacitors. Two splits of PDA were performed in N2 ambient at 850°C/60 s and 1050°C/60 s, respectively. The 1050°C annealed capacitor could be programmed and erased normally by using Fowler-Nordheim (FN) injection. In contrast, the 850°C annealed device could not be erased, even though it could be programmed properly. By measuring the gate leakage current and the flatband voltage shift, we found the erase failure in the 850°C annealed device was due to a larger gate back-injection leakage current at Vg<0. The trend of gate leakage current was further verified in two Al/Al2O3/SiO2/p-Si control capacitors with the same PDA splits. In addition, constant voltage stress measurements on control capacitors in the FN regime showed that the change of gate leakage current followed an empirical Curie-von Schweidler law at Vg<0. The data pointed out the importance to further study the relation between PDA conditions and the defect generation properties in Al2O3 blocking layer.
