We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic fourterminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-...We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic fourterminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas （2DEG） with Rashba spin orbital interaction （RSOI）, one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Biittiker formalism, we found that when a longitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.展开更多
When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resista...When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resistance states in a ferromagnet/graphene/ferromagnet junction. Here, we report manifest spin valve effects from room temperature to 10 K in junctions comprising NiFe electrodes and an interlayer made of double-layer or single-layer graphene grown by chemical vapor deposition. We have found that the spin valve effect is stronger with double-layer graphene than with single-layer graphene. The ratio of relative magnetoresistance increases from 0.09% at room temperature to 0.14% at 10 K for single-layer graphene and from 0.27% at room temperature to 0.48% at 10 K for double-layer graphene. The spin valve effect is perceived to retain the spin-polarized transport in the vertical direction and the hysteretic nature of magnetoresistance provides the basic functionality of a memory device. We have also found that the junction resistance decreases monotonically as temperature is lowered and the current-voltage characteristics show linear behaviour. These results revealed that a graphene interlayer works not as a tunnel barrier but rather as a conducting thin film between two NiFe electrodes.展开更多
A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and consideri...A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and considering the different charge-spin relationship of the special carriers in organic semiconductors,the current spin polarization has been obtained.Effects of the branch current ratio and the polaron proportion on the spin polarized current injection efficiency are studied.From the calculation,it is found that the improvement of the spin polarized current injection efficiency can be obtained by adjusting the branch current ratio;moreover,high polaron proportion in organic semiconductors is beneficial for obtaining high current spin polarization.展开更多
基金Supported by National Natural Science Foundation of China under Grant No.10704016Natural Science Foundation of Jiangsu Province under Grant Nos.BK2007100Ministry of Education of China under Grant No.MEC-20070286036
文摘We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic fourterminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas （2DEG） with Rashba spin orbital interaction （RSOI）, one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Biittiker formalism, we found that when a longitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.
文摘When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resistance states in a ferromagnet/graphene/ferromagnet junction. Here, we report manifest spin valve effects from room temperature to 10 K in junctions comprising NiFe electrodes and an interlayer made of double-layer or single-layer graphene grown by chemical vapor deposition. We have found that the spin valve effect is stronger with double-layer graphene than with single-layer graphene. The ratio of relative magnetoresistance increases from 0.09% at room temperature to 0.14% at 10 K for single-layer graphene and from 0.27% at room temperature to 0.48% at 10 K for double-layer graphene. The spin valve effect is perceived to retain the spin-polarized transport in the vertical direction and the hysteretic nature of magnetoresistance provides the basic functionality of a memory device. We have also found that the junction resistance decreases monotonically as temperature is lowered and the current-voltage characteristics show linear behaviour. These results revealed that a graphene interlayer works not as a tunnel barrier but rather as a conducting thin film between two NiFe electrodes.
基金supported by the National Natural Science Foundation of China(Grant Nos.10904083 and 10904084)the Project of Shandong Provincial Higher Educational Science and Technology Program(Grant No.J13LA05)the Excellent Young Scholars Research Fund of Shandong Normal University
文摘A double T-shaped device model is constructed to investigate the spin polarized current injection and transportation properties in organic semiconductors.Based on the spin diffusion theory and Ohm’s law and considering the different charge-spin relationship of the special carriers in organic semiconductors,the current spin polarization has been obtained.Effects of the branch current ratio and the polaron proportion on the spin polarized current injection efficiency are studied.From the calculation,it is found that the improvement of the spin polarized current injection efficiency can be obtained by adjusting the branch current ratio;moreover,high polaron proportion in organic semiconductors is beneficial for obtaining high current spin polarization.
