A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalen...A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.展开更多
The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
基金Project(2012BAE08B09)supported by the National Key Technology R&D Program of China
文摘A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
