Sludge blanket height （SBH） is an important parameter in the clarifier design, operation and control. Based on an overview and classification of SBH algorithms, a modified SBH algorithm is proposed by incorporating ...Sludge blanket height （SBH） is an important parameter in the clarifier design, operation and control. Based on an overview and classification of SBH algorithms, a modified SBH algorithm is proposed by incorporating a threshold concentration limit into a relative concentration sharp change algorithm to eliminate the disturbance of compression interfaces on the correct simulation of SBH. Pilot-scale test data are adopted to compare reliability of three SBH algorithms reported in literature and the modified SBH algorithm developed in this paper. Calculated results demonstrate that the three SBH algorithms give results with large deviation （〉 50%） from measured SBH, especially under low solid flux conditions. The modified algorithm is computationally efficient and reliable in matching the measured data. It is incorporated into a one- dimensional clarifier model for stable simulation of pilot-scale experimental clarifier data and into dynamic simulation of a full-scale wastewater treatment plant （WWTP） clarifier data.展开更多
采用电子束蒸发法在4H-SiC表面制备了Ti/Au肖特基电极,研究了退火温度对Au/Ti/4H-SiC肖特基接触电学特性的影响。对比分析了不同退火温度下样品的电流密度-电压(J-V)和电容-电压(C-V)特性曲线,实验结果表明退火温度为500℃时Au/Ti/4H-Si...采用电子束蒸发法在4H-SiC表面制备了Ti/Au肖特基电极,研究了退火温度对Au/Ti/4H-SiC肖特基接触电学特性的影响。对比分析了不同退火温度下样品的电流密度-电压(J-V)和电容-电压(C-V)特性曲线,实验结果表明退火温度为500℃时Au/Ti/4H-SiC肖特基势垒高度最大,在J-V测试和C-V测试中分别达到0.933 e V和1.447 e V,且获得理想因子最小值为1.053,反向泄漏电流密度也实现了最小值1.97×10^(-8)A/cm^2,击穿电压达到最大值660 V。对退火温度为500℃的Au/Ti/4H-SiC样品进行J-V变温测试。测试结果表明,随着测试温度的升高,肖特基势垒高度不断升高而理想因子不断减小,说明肖特基接触界面仍然存在缺陷或者横向不均匀性,高温下的测试进一步证明肖特基接触界面还有很大的改善空间。展开更多
采用超高真空气相沉积系统外延硒(Se)超薄层钝化Si(100)表面,研究其与金属铝(Al)、铂(Pt)的接触特性。对于Al与Se钝化后的Si接触样品,其肖特基势垒高度(SBH)值为0.2 e V,相比于HF处理的样品,SBH降低了一半;随着退火温度从200℃升至500℃...采用超高真空气相沉积系统外延硒(Se)超薄层钝化Si(100)表面,研究其与金属铝(Al)、铂(Pt)的接触特性。对于Al与Se钝化后的Si接触样品,其肖特基势垒高度(SBH)值为0.2 e V,相比于HF处理的样品,SBH降低了一半;随着退火温度从200℃升至500℃,SBH值逐渐升高至HF处理的样品的SBH值。而对Pt与Se钝化的Si接触样品,未退火时电流电压特性基本与HF处理的样品一致,然而快速热退火后,Se钝化的样品基本保持不变,而HF处理的样品反向偏置电流迅速增大。通过拟合金半接触SBH与金属功函数的关系,得到线性关系的斜率为S=0.41,说明硒超薄层可以降低Si(100)表面与金属接触费米钉扎效应。展开更多
The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH（Schottky barrier height）is described.Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky...The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH（Schottky barrier height）is described.Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes（NiSi/n-Si SJDs）,the effects of different of process parameters dopant segregation,including segregation anneal temperature and dopant implant dose,on the properties of the NiSi/n-Si SJDs have been studied,and the corresponding mechanisms are discussed.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.501380107)
文摘Sludge blanket height （SBH） is an important parameter in the clarifier design, operation and control. Based on an overview and classification of SBH algorithms, a modified SBH algorithm is proposed by incorporating a threshold concentration limit into a relative concentration sharp change algorithm to eliminate the disturbance of compression interfaces on the correct simulation of SBH. Pilot-scale test data are adopted to compare reliability of three SBH algorithms reported in literature and the modified SBH algorithm developed in this paper. Calculated results demonstrate that the three SBH algorithms give results with large deviation （〉 50%） from measured SBH, especially under low solid flux conditions. The modified algorithm is computationally efficient and reliable in matching the measured data. It is incorporated into a one- dimensional clarifier model for stable simulation of pilot-scale experimental clarifier data and into dynamic simulation of a full-scale wastewater treatment plant （WWTP） clarifier data.
文摘采用电子束蒸发法在4H-SiC表面制备了Ti/Au肖特基电极,研究了退火温度对Au/Ti/4H-SiC肖特基接触电学特性的影响。对比分析了不同退火温度下样品的电流密度-电压(J-V)和电容-电压(C-V)特性曲线,实验结果表明退火温度为500℃时Au/Ti/4H-SiC肖特基势垒高度最大,在J-V测试和C-V测试中分别达到0.933 e V和1.447 e V,且获得理想因子最小值为1.053,反向泄漏电流密度也实现了最小值1.97×10^(-8)A/cm^2,击穿电压达到最大值660 V。对退火温度为500℃的Au/Ti/4H-SiC样品进行J-V变温测试。测试结果表明,随着测试温度的升高,肖特基势垒高度不断升高而理想因子不断减小,说明肖特基接触界面仍然存在缺陷或者横向不均匀性,高温下的测试进一步证明肖特基接触界面还有很大的改善空间。
文摘采用超高真空气相沉积系统外延硒(Se)超薄层钝化Si(100)表面,研究其与金属铝(Al)、铂(Pt)的接触特性。对于Al与Se钝化后的Si接触样品,其肖特基势垒高度(SBH)值为0.2 e V,相比于HF处理的样品,SBH降低了一半;随着退火温度从200℃升至500℃,SBH值逐渐升高至HF处理的样品的SBH值。而对Pt与Se钝化的Si接触样品,未退火时电流电压特性基本与HF处理的样品一致,然而快速热退火后,Se钝化的样品基本保持不变,而HF处理的样品反向偏置电流迅速增大。通过拟合金半接触SBH与金属功函数的关系,得到线性关系的斜率为S=0.41,说明硒超薄层可以降低Si(100)表面与金属接触费米钉扎效应。
文摘The post-silicide of dopant segregation process for adjusting NiSi/n-Si SBH（Schottky barrier height）is described.Adopting the analysis of the I–V characteristic curve and extrapolating the SBH of NiSi/n-Si Schottky junction diodes（NiSi/n-Si SJDs）,the effects of different of process parameters dopant segregation,including segregation anneal temperature and dopant implant dose,on the properties of the NiSi/n-Si SJDs have been studied,and the corresponding mechanisms are discussed.
