This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are...This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.展开更多
This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type dr...This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.展开更多
This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present mode...This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.展开更多
基金Project supported by the State Key Program of the National Natural Science Foundation of China(Grant No.61234006)
文摘This paper describes the successful fabrication of 4H-SiC junction barrier Schottky （JBS） rectifiers with a linearly graded field limiting ring （LG-FLR）. Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 （about 80% of the theoretical value）. Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length.
基金Project supported by the 13115 Innovation Engineering of Shaanxi Province of China(Grant No.2008ZDKG-30)
文摘This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier （JBSR） with embedded P layer （EPL） in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage （BV） and low specific on-resistance （Ron,sp）. The influences of device parameters, such as the depth of the embedded P＋ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga＇s figure of merit （BFOM） is increased by 67.9% compared to a conventional 4H-SiC JBSR.
基金Project supported by Shaanxi 13115 Innovation Engineering Foundation (Grant No. 2008ZDKG-30)Pre-research Project(Grant No. 51308040302)
文摘This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.
