基于半导体量子阱激光器的基本理论 ,设计了合理的 1 .3 μm无致冷 Al Ga In As/ In P应变补偿量子阱激光器结构 ,通过低压金属有机化学气相外延 ( LP-MOVPE)工艺在国内首次生长出了高质量的 Al Ga In As/ In P应变补偿量子阱结构材料 ...基于半导体量子阱激光器的基本理论 ,设计了合理的 1 .3 μm无致冷 Al Ga In As/ In P应变补偿量子阱激光器结构 ,通过低压金属有机化学气相外延 ( LP-MOVPE)工艺在国内首次生长出了高质量的 Al Ga In As/ In P应变补偿量子阱结构材料 ,用此材料制作的器件指标为激射波长 :1 2 80 nm≤λ≤ 1 3 2 0 nm,阈值电流 :Ith( 2 5℃ )≤ 1 5m A,Ith( 85℃ )≤ 3 0 m A,量子效率变化 :Δηex( 2 5℃～ 85℃ )≤ 1 .0 d B,线性功率 :P0 ≥ 1 0 m展开更多
Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated ...Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.展开更多
Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap s...Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.展开更多
讨论了影响激光器高温特性的主要因素 ,提出了在 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器中采用倒台脊波导 ( RM- RWG)结构可以改善激光器高温无致冷的工作特性 ,研制出了 RM- RWG结构的 1 .3μm高温无致冷 Al Ga In As应变量...讨论了影响激光器高温特性的主要因素 ,提出了在 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器中采用倒台脊波导 ( RM- RWG)结构可以改善激光器高温无致冷的工作特性 ,研制出了 RM- RWG结构的 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器 ,其阈值电流为 6m A,特征温度达到 95 K( 2 5℃～ 85℃ ) 。展开更多
用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,...用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 .3) ,光荧光谱线窄 (FWHM=31me V)展开更多
AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave s...AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.展开更多
We have proposed and demonstrated hybrid Al Ga In As/Si Fabry–Pérot(FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at roo...We have proposed and demonstrated hybrid Al Ga In As/Si Fabry–Pérot(FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at room temperature with a threshold current of 45 m A for the hybrid FP laser with a cavity length of 415 μm and a width of 7 μm. Near-field optical microscope images indicate an efficient output emission from the underneath evanescently-coupled silicon waveguide. Furthermore, single-mode lasing with a side-mode suppression-ratio of29 d B and a threshold current of 16 m A is realized for the 150 μm-long hybrid FP laser.展开更多
文摘Polarization insensitive AlGaInAs InP semiconductor optical amplifier is realized at a wavelength of 1550nm.The active layer consists of three tensile strained wells with strain 0 40%.The amplifiers are fabricated to ridge waveguide structure with 7° tilted cavity.The two facets are coated with two layers of anti reflection Ti 3O 5/Al 2O 3 films.Residual facet reflectivity is found to be less than 0 03%.The semiconductor optical amplifer exhibits 20dB of signal gain and 7 2dBm of saturation output power with an excellent polarization insensitivity (less than 0 8dB) at 200mA and 1540nm window.
基金Supported by the National Natural Science Foundation of China(No.61106052)
文摘Using beam propagation method （BPM）, key optical design parameters of InP/AlGaInAs multiple quantumwell （MQW） ring laser were numerically analyzed. The influences of waveguide dimensions, curvature radiusand gap size on the coupling efficiency were discussed. An InP/AlGaInAs MQW ring laser with radius of 350 μm wasdesigned and realized. The experimental results show that the designed device, lasing at 1 563.2 nm with side modesuppression ratio higher than 20 dB, exhibited unidirectional bistability between the clockwise and counterclockwisemodes.
文摘讨论了影响激光器高温特性的主要因素 ,提出了在 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器中采用倒台脊波导 ( RM- RWG)结构可以改善激光器高温无致冷的工作特性 ,研制出了 RM- RWG结构的 1 .3μm高温无致冷 Al Ga In As应变量子阱激光器 ,其阈值电流为 6m A,特征温度达到 95 K( 2 5℃～ 85℃ ) 。
文摘用低压金属有机化学气相沉积 (L P- MOCVD)设备生长了 Al Ga In As压应变量子阱材料、应变补偿量子阱材料并进行了材料特性的测试 ,通过二次离子质谱仪 (SIMS)的测试讨论了材料中氧含量对材料特性的影响 ,通过采用高纯原料和纯化载气 ,生长出了较高质量的 Al Ga In As应变量子阱材料 :氧含量小 ,光荧光强度大 (2 5 m W,PL=0 .3) ,光荧光谱线窄 (FWHM=31me V)
基金supported by the National Natural Science Foundation of China under Grant Nos. 60777028,60723002, 60838003, 61006042, and 61061160502
文摘AlGalnAs/InP coupled-circular microlasers with radius of 10-and 2-μm width middle bus waveguide are fabricated by photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave single-mode operation is realized with an output power of 0.17 mW and a side-mode suppression ratio of 23 dB at 45 mA. A longitudinal mode interval of 11 nm is obtained from the lasing spectra, and mode Q factor of 6.2×10^3 is estimated from 3-dB width of a minor peak near the threshold current. The mode characteristics are simulated by finite-difference time-domain technique for coupled- circular resonators. The results show that, in addition to the coupled modes, high-radial-order whispering gallery modes with travelling wave behaviors can also have high Q factors in the coupled-circular resonators with a middle bus waveguide.
基金supported by the Key Research Program of Frontier Sciences,Chinese Academy of Sciences(No.QYZDJ-SSW-JSC002)the NSFC/RGC Joint Project(No.61431166003)the National Natural Science Foundation of China(No.61377105)
文摘We have proposed and demonstrated hybrid Al Ga In As/Si Fabry–Pérot(FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at room temperature with a threshold current of 45 m A for the hybrid FP laser with a cavity length of 415 μm and a width of 7 μm. Near-field optical microscope images indicate an efficient output emission from the underneath evanescently-coupled silicon waveguide. Furthermore, single-mode lasing with a side-mode suppression-ratio of29 d B and a threshold current of 16 m A is realized for the 150 μm-long hybrid FP laser.
