The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88...The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.展开更多
Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
In order to obtain thermoelectric materials with high figure of merit, theconcept of Hollow (Vacuum) Quantum Structure or Effect and related thermoelectric materials designwere proposed. To demonstrate the theory, the...In order to obtain thermoelectric materials with high figure of merit, theconcept of Hollow (Vacuum) Quantum Structure or Effect and related thermoelectric materials designwere proposed. To demonstrate the theory, the materials of (Bi_(0.15)Sb_(0.85))_2Te_3 with porousstructure have been fabricated. Their thermoelectric properties and the microstructure wereinvestigated and compared with their density structure. It was found that the porous structure couldimprove their properties greatly.展开更多
Mg_(3)Bi_(2-x)Sb_(x)(0≤x≤2)have gained significant attention due to their potential in thermoelectric(TE)applications.However,there has been much debating regarding their structural properties and phase diagram as a...Mg_(3)Bi_(2-x)Sb_(x)(0≤x≤2)have gained significant attention due to their potential in thermoelectric(TE)applications.However,there has been much debating regarding their structural properties and phase diagram as a function of pressure,which is crucial for understanding of their TE properties.Here,we investigate a unified phase diagram of Mg_(3)(Bi,Sb)_(2) materials up to 40 GPa at room temperature using high-pressure X-ray diffraction.Two high-pressure phases with the structural transition succession of P3m1→C2/m→P21/n are observed,which is valid for all Mg_(3)Bi_(2-x)Sb_(x)(0≤x≤2)compounds.We further explore the low-pressure phase P3m1 and report that alloying does not change the quasi-isotropic compression of the unit lattice parameters nor has effect on the anisotropic bond compressibility,as recently reported for the end-members.Our study presents a comprehensive picture of Mg_(3)Bi_(2–x)Sb_(x) as a function of pressure and chemical composition providing a solid foundation for the future experimental and theoretical studies searching for the most efficient TE compound in Mg_(3)(Bi,Sb)_(2).展开更多
Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copp...Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties.展开更多
Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrie...Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures.Herein,we grew SnS_(2)/Bi_(2)X_(3)(X=Se,Te)van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition.The band alignment,measured by high-resolution X-ray photoelectron spectroscopy,suggested the successful design of type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructures.The SnS_(2)/Bi_(2)X_(3) heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector.The photocurrent densities in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure-based devices were more than one order of magnitude higher than those of SnS_(2),Bi_(2)Te_(3),and Bi_(2)Te_(3).The improved photoelectric properties of the SnS_(2)/Bi_(2)X_(3) heterostructures can be explained as follows:(i)the photoexcited electrons and holes are effectively separated in the heterostructures;(ii)the charge-transfer efficiency and carrier density at the interface between the SnS_(2)/Bi_(2)X_(3) heterostructures and the electrolyte are greatly improved;(iii)the formed heterostructures expand the light absorption range.The photoelectric performance was further enhanced by efficient light trapping in the upright SnS_(2).The photoelectric response is higher in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure than in the type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure due to more efficient charge transportation at the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure/electrolyte interface.These results suggest that suitable type-Ⅰ and type-Ⅱ heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.展开更多
Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrow...Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements;thus,they are the potential solution.In this work,we construct a filter-free and self-power NIR narrowband photodetector based on the structure of n-CdSe/p-Sb_(2)(S_(1-x),Se_(x))_(3)heterojunction,and achieve a narrow spectral response at 735 nm with a full width at half-maximum of 35.3 nm in the detector.Further,the imaging characteristics of the NIR narrowband detector are explored,verifying the ability to narrowband detection and imaging.This filter-free and self-power NIR narrowband detector shows considerable promise in real-life applications.展开更多
基金"Development of ecological knowledge-based advanced materials and technologies for multifunctional application" (Grant No.TR34005)"New approach to designing materials for energy conversion and storage" (Grant No.OI172060)"0-3D nanostructures for application in electronics and renewable energy sources:synthesis,characterisation and processing" (Grant No.III45007)
文摘The results of experimental investigation of n-type semiconductor based on Bi2Te3 alloy were presented. This material is used in manufacture of thermoelectric coolers and electrical power generation devices. BizTe2.88Se0.12 solid solution single crystal has been grown using the Czochralski method. Monitoring of structure changes of the sample was carried out by electron microscope. The elemental composition of the studied alloy was obtained by energy dispersive spectrometry （EDS） analysis and empirical formula of the compound was established. X-ray diffraction analysis confirmed that the Bi2Te2.88Se0.12 sample was a single phase with rhombohedral structure. The behavior upon heating was studied using differential thermal analysis （DTA） technique. Changes in physical and chemical properties of materials were measured as a function of increasing temperature by thermogravimetric analysis （TGA）. The lattice parameters values obtained by X-ray powder diffraction analyses of Bi2Te2.88Se0.12 are very similar to BizTe3 lattice constants, indicating that a small portion of tellurium is replaced with selenium. The obtained values for specific electrical and thermal conductivities are in correlation with available literature data. The Vickers microhardness values are in range between HV 187 and HV 39.02 and decrease with load increasing. It is shown that very complex process of infrared thermography can be applied for characterization of thermoelectric elements and modules.
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
基金This work was financially supported by National Natural Science Foundation of China (No.5O042014 and 60176004)
文摘In order to obtain thermoelectric materials with high figure of merit, theconcept of Hollow (Vacuum) Quantum Structure or Effect and related thermoelectric materials designwere proposed. To demonstrate the theory, the materials of (Bi_(0.15)Sb_(0.85))_2Te_3 with porousstructure have been fabricated. Their thermoelectric properties and the microstructure wereinvestigated and compared with their density structure. It was found that the porous structure couldimprove their properties greatly.
基金W.Xu acknowledges the National Natural Science Foundation of China(Grants no.12075273)Y.Pan acknowledges the financial support from Alexander von Humboldt Foundation.S.Liu acknowledges National Natural Science Foundation of China under Grant No.51872133Shenzhen Key Program for Long-Term Academic Support Plan 20200925164021002.
文摘Mg_(3)Bi_(2-x)Sb_(x)(0≤x≤2)have gained significant attention due to their potential in thermoelectric(TE)applications.However,there has been much debating regarding their structural properties and phase diagram as a function of pressure,which is crucial for understanding of their TE properties.Here,we investigate a unified phase diagram of Mg_(3)(Bi,Sb)_(2) materials up to 40 GPa at room temperature using high-pressure X-ray diffraction.Two high-pressure phases with the structural transition succession of P3m1→C2/m→P21/n are observed,which is valid for all Mg_(3)Bi_(2-x)Sb_(x)(0≤x≤2)compounds.We further explore the low-pressure phase P3m1 and report that alloying does not change the quasi-isotropic compression of the unit lattice parameters nor has effect on the anisotropic bond compressibility,as recently reported for the end-members.Our study presents a comprehensive picture of Mg_(3)Bi_(2–x)Sb_(x) as a function of pressure and chemical composition providing a solid foundation for the future experimental and theoretical studies searching for the most efficient TE compound in Mg_(3)(Bi,Sb)_(2).
基金the UCLA California NanoSystem Institute(CNSI)Noble Family Innovation Fund for material preparationpartial support from the National Science Foundation through grant number 2329192 for transport studies and analysis.
文摘Copper-doped Bi_(2)Se_(3)(Cu_(x)Bi_(2)Se_(3))is of considerable interest for tailoring its electronic properties and inducing exotic charge correlations while retaining the unique Dirac surface states.However,the copper dopants in Cu_(x)Bi_(2)Se_(3) display complex electronic behaviors and may function as either electron donors or acceptors depending on their concentration and atomic sites within the Bi_(2)Se_(3) crystal lattice.Thus,a precise understanding and control of the doping concentration and sites is of both fundamental and practical significance.Herein,we report a solution-based one-pot synthesis of Cu_(x)Bi_(2)Se_(3) nanoplates with systematically tunable Cu doping concentrations and doping sites.Our studies reveal a gradual evolution from intercalative sites to substitutional sites with increasing Cu concentrations.The Cu atoms at intercalative sites function as electron donors while those at the substitutional sites function as electron acceptors,producing distinct effects on the electronic properties of the resulting materials.We further show that Cu_(0.18)Bi_(2)Se_(3) exhibits superconducting behavior,which is not present in Bi_(2)Se_(3),highlighting the essential role of Cu doping in tailoring exotic quantum properties.This study establishes an efficient methodology for precise synthesis of Cu_(x)Bi_(2)Se_(3) with tailored doping concentrations,doping sites,and electronic properties.
基金supported by the National Natural Science Foundation of China(12074311,11774288,11974279)the Natural Science Foundation of Shaanxi Province(2019JC-25)。
文摘Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance.Band alignment is crucial for understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures.Herein,we grew SnS_(2)/Bi_(2)X_(3)(X=Se,Te)van der Waals heterostructures by combining physical vapor deposition with chemical vapor deposition.The band alignment,measured by high-resolution X-ray photoelectron spectroscopy,suggested the successful design of type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructures.The SnS_(2)/Bi_(2)X_(3) heterostructure greatly improved the photoelectric response of a photoelectrochemical-type photodetector.The photocurrent densities in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) and type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure-based devices were more than one order of magnitude higher than those of SnS_(2),Bi_(2)Te_(3),and Bi_(2)Te_(3).The improved photoelectric properties of the SnS_(2)/Bi_(2)X_(3) heterostructures can be explained as follows:(i)the photoexcited electrons and holes are effectively separated in the heterostructures;(ii)the charge-transfer efficiency and carrier density at the interface between the SnS_(2)/Bi_(2)X_(3) heterostructures and the electrolyte are greatly improved;(iii)the formed heterostructures expand the light absorption range.The photoelectric performance was further enhanced by efficient light trapping in the upright SnS_(2).The photoelectric response is higher in the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure than in the type-Ⅱ SnS_(2)/Bi_(2)Te_(3) heterostructure due to more efficient charge transportation at the type-Ⅰ SnS_(2)/Bi_(2)Te_(3) heterostructure/electrolyte interface.These results suggest that suitable type-Ⅰ and type-Ⅱ heterostructures can be developed for high-performance photodetectors and other optoelectronic devices.
基金China Postdoctoral Science Foundation Project,Grant/Award Numbers:2020M680101,2021T140233Fundamental Research Funds for the Central Universities,Grant/Award Number:2021XXJS028+2 种基金National Natural Science Foundation of China,Grant/Award Numbers:61725401,61904058,62050039the Graduates'Innovation Fund of Huazhong University of Science and Technology,Grant/Award Number:2021yjsCXCY051the National Key R&D Program of China,Grant/Award Number:2016YFA0204000。
文摘Accurate and clear bioimaging is crucial in the field of medical diagnosis.High-quality bioimaging requires to avoid the effects of ambient light as well as the absorption of biological tissues.Nearinfrared(NIR)narrowband detectors located at wavelength from 650 to 900 nm can meet these requirements;thus,they are the potential solution.In this work,we construct a filter-free and self-power NIR narrowband photodetector based on the structure of n-CdSe/p-Sb_(2)(S_(1-x),Se_(x))_(3)heterojunction,and achieve a narrow spectral response at 735 nm with a full width at half-maximum of 35.3 nm in the detector.Further,the imaging characteristics of the NIR narrowband detector are explored,verifying the ability to narrowband detection and imaging.This filter-free and self-power NIR narrowband detector shows considerable promise in real-life applications.
