This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strat...This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIG5 absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride （NaF and KF） post-deposition treatment （PDT）, we discuss and interpret the following issues： ① The delamination of CIGS thin films induced by Na incorporation facilitates CulnSe2 formation and inhibits Ga during low-temperature co-evaporation process- es. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss, This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect （Cd^＋Cu） density, which is transferred from the acceptor defect （C^-cu） and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.展开更多
In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wa...In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.展开更多
文摘This paper reviews the development history of alkali element doping on Cu（In,Ga）Se2 （CIGS） solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIG5 absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride （NaF and KF） post-deposition treatment （PDT）, we discuss and interpret the following issues： ① The delamination of CIGS thin films induced by Na incorporation facilitates CulnSe2 formation and inhibits Ga during low-temperature co-evaporation process- es. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss, This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect （Cd^＋Cu） density, which is transferred from the acceptor defect （C^-cu） and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.
基金funding by the German Federal Ministry for Economic Affairs and Energy (BMWi)the German Federal Ministry of Education and Research (BMBF)+1 种基金the German State of Baden-Württembergthe European Union
文摘In this article, we discuss the leading thin-film photovoltaic （PV） technology based on the Cu（ln,Ga）Se2 （CIGS） compound semiconductor. This contribution includes a general comparison with the conventional Si-wafer-based PV technology and discusses the basics of the CIGS technology as well as advances in world-record-level conversion efficiency, production, applications, stability, and future developments with respect to a flexible product. Once in large-scale mass production, the CIGS technology has the highest potential of all PV technologies for cost-efficient clean energy generation.
