Effect of Light Emitting Diodes (LEDs) on Growth, Mineral Composition, and Nutritional Value of Wheat & Lentil Sprouts

Sprouts are ready-to-eat and are recognized worldwide as functional components of the human diet.Recent advances in innovative agricultural techniques could enable an increase in the production of healthy food.The use of light-emitting diode(LED)in indoor agricultural production could alter the biological feedback loop,increasing the functional benefits of plant foods such as wheat and lentil sprouts and promoting the bioavailability of nutrients.The effects of white(W),red(R),and blue(B)light were investigated on the growth parameters and nutritional value of wheat and lentil sprouts.In the laboratory,seeds were sown under three different LED treat-ments:white,red,and blue light,while normal incandescent light served as a control.Percentage seed germina-tion improved by 18.34%and 12.67%for wheat and 18.34%and 12.67%for lentil sprouts under LED treatments R and B,respectively.An increase in total soluble protein and sugar by 33.4%and 9.23%in wheat and by 31.5%and 5.87%in lentils was observed under the R LED treatment.Vitamin C concentrations in wheat and lentils were significantly increased by R LED compared to all other treatments.Other parameters,including potassium and sodium concentrations,were significantly increased under red and blue light compared to the control;white light,on the other hand,significantly decreased all these parameters.According to the experimental data,red and blue LED light could be beneficial in the production of functional wheat and lentil sprouts with high nutrient concentrations.

不同波长LEDs光源对苦荞芽菜生长、生物活性物积累及抗氧化活性的影响

为探究不同波长LEDs光源对苦荞芽菜生长的影响,本研究以黑暗(D)作对照,采用单色红(R)、蓝(B)、绿(G)光源培养苦荞芽菜,收获后分别测定其形态指标、生物活性物积累量、类黄酮合成关键基因表达量及抗氧化活性指标,结果表明:B处理的苦荞芽菜下胚轴呈深红色,伸长生长受到强烈抑制,花青素、总黄酮及总酚积累量均最高,分别是D的7.18、2.96和2.49倍;R处理的下胚轴呈浅粉色,上述3种生物活性物积累量分别是对照的2.56、1.68和1.40倍;G处理的下胚轴伸长与R相似,外观呈透明白色,生物活性物积累量与对照无显著差异。B和R均强烈诱导类黄酮生物合成通路上关键结构基因表达,显著增加苦荞芽菜下胚轴抗氧化活性。此外,各单色光处理均未显著影响苦荞芽菜可食用部位的鲜重。由此可见,红、蓝LEDs光源可显著影响苦荞芽菜形态生长,并增加其生物活性物积累及抗氧化能力,以蓝光最佳。

Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)

The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

CsPbBr_(3)@MIL-53纳米复合荧光粉的合成、性能及其白光LEDs应用

全无机钙钛矿(CsPbX3,X=Cl,Br,I)纳米晶因其卓越的光电性能被广泛应用于光电子器件领域,但稳定性问题仍然是制约其商业化发展的主要因素之一。基于此,本研究以提高CsPbBr_(3)纳米晶的稳定性和固态发光性能为研究目标,选用具有优异疏水性能的多孔MIL-53(Al)金属有机框架(MOFs)作为封装基质,通过热注射工艺在MIL-53(Al)孔道内原位限域生长CsPbBr_(3)纳米晶,成功制备了优异发光性能和稳定性的CsPbBr_(3)@MIL-53纳米复合荧光粉。MIL-53通过包含的苯环和有机配体与CsPbBr_(3)纳米晶螯合,将其稳固地锚定在孔道内,既保护了CsPbBr_(3)纳米晶免受外界环境的影响,又有效防止了纳米晶之间的聚集,从而避免了固态荧光猝灭。此外,MIL-53中的COO-官能团与CsPbBr_(3)纳米晶表面未配对的Pb2+结合,钝化了其表面的缺陷,抑制了载流子的非辐射复合。MIL-53包含的苯环及有机长链又赋予了纳米复合荧光粉出色的疏水性能。这些因素的协同作用显著提升了CsPbBr_(3)@MIL-53纳米复合荧光粉的光学性能和水稳定性,其荧光量子产率(Photoluminescence Quantum Yield,PLQY)为75.4%,是固态CsPbBr_(3)纳米晶粉体(33.2%)的2.3倍。将CsPbBr_(3)@MIL-53纳米复合荧光粉完全浸泡在水中10h,其荧光强度仍能维持初始值的75.6%。最后,将绿光发射的CsPbBr_(3)@MIL-53纳米复合荧光粉应用于白光发光二极管(LightEmittingDiodes,LEDs)器件,实现了126%NTSC和85%Rec.2020的宽色域覆盖面积,表明其在显示器件领域具有优异的应用前景。

Sweat-permeable electronic patches by designing threedimensional liquid diodes

Wearable electronics face a significant challenge related to the limited permeability of electronic materials/devices.This issue results in sweat accumulation across the interface of the device and skin following a specific period of use[1−3].Not only does it bring about discomfort for users regarding thermos-physiology,but it also has a detrimental effect on interface adhesion and signal quality,thus hindering exact sig-nal monitoring during prolonged periods[4−6].

Transcriptome analysis reveals effects of red and blue lightemitting diodes(LEDs)on the growth,chlorophyll fluorescence and endogenous plant hormones of potato(Solanum tuberosum L.)plantlets cultured in vitro

Red and blue light illumination has been reported to significantly affect plantlet growth.Potato is an important food and feed crop in the world and potato plantlet cultured in vitro plays an important role in potato production.However,few studies have documented the effects of red and blue light on the growth of potato plantlets revealed at the transcriptome level.The objective of this study was to determine the growth and physiological responses of potato plantlets cultured in vitro under monochromatic red(RR),monochromatic blue(BB)as well as combined red and blue(RB)LEDs using the RNA-Seq technique.In total,3150 and 814 differentially expressed genes(DEGs)were detected in potato plantlets under RR and BB,respectively,compared to RB(used as control).Compared to the control,the DEGs enriched in"photosynthesis"and"photosynthesis-antenna proteins"metabolic pathways were up-regulated and down-regulated by BB and RR,respectively,which might be responsible for the increases and decreases of maximum quantum yield(F_(v)/F_(m)),photochemical quantum yield(φ_(PSII)),photochemical quenching(q_(P))and electron transfer rate(ETR)in BB and RR,respectively.Potato plantlets exhibited dwarfed stems and extended leaves under BB,whereas elongated stems and small leaves were induced under RR.These dramatically altered plantlet phenotypes were associated with variable levels of endogenous plant hormones gibberellin(GAs),indoleacetic acid(IAA)and cytokinins(CKs),as assessed in stems and leaves of potato plantlets.In addition,monochromatic red and blue LEDs trigged the opposite expression profiles of DEGs identified in the"plant hormone signal transduction"metabolic pathway,which were closely related to the endogenous plant hormone levels in potato plantlets.Our results provide insights into the responses of potato plantlets cultured in vitro to red and blue LEDs at the transcriptomic level and may contribute to improvements in the micro-propagation of potato plantlets cultured in vitro from the light spectrum aspect.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.

Proton‑Prompted Ligand Exchange to Achieve High‑Efficiency CsPbI_(3) Quantum Dot Light‑Emitting Diodes

CsPbI_(3)perovskite quantum dots(QDs)are ideal materials for the next generation of red light-emitting diodes.However,the low phase stability of CsPbI_(3)QDs and long-chain insulating capping ligands hinder the improvement of device performance.Traditional in-situ ligand replacement and ligand exchange after synthesis were often difficult to control.Here,we proposed a new ligand exchange strategy using a proton-prompted insitu exchange of short 5-aminopentanoic acid ligands with long-chain oleic acid and oleylamine ligands to obtain stable small-size CsPbI_(3)QDs.This exchange strategy maintained the size and morphology of CsPbI_(3)QDs and improved the optical properties and the conductivity of CsPbI_(3)QDs films.As a result,high-efficiency red QD-based light-emitting diodes with an emission wavelength of 645 nm demonstrated a record maximum external quantum efficiency of 24.45%and an operational half-life of 10.79 h.

GaN based ultraviolet laser diodes

In the past few years,many groups have focused on the research and development of GaN-based ultraviolet laser diodes(UV LDs).Great progresses have been achieved even though many challenges exist.In this article,we analyze the challenges of developing GaN-based ultraviolet laser diodes,and the approaches to improve the performance of ultraviolet laser diode are reviewed.With these techniques,room temperature(RT)pulsed oscillation of AlGaN UVA(ultraviolet A)LD has been realized,with a lasing wavelength of 357.9 nm.Combining with the suppression of thermal effect,the high output power of 3.8 W UV LD with a lasing wavelength of 386.5 nm was also fabricated.

Gallium nitride blue laser diodes with pulsed current operation exceeding 15 W in optical output power

Since Shuji Nakamura first demonstrated the nitride laser in 1996[1],the domain of semiconductor laser technology has undergone a period of remarkable growth[2,3].Al In Ga N-based diode lasers(LDs)have proven their exceptional capabilities across a spectrum of pivotal applications,including high-density data storage,laser displays,laser lighting,and quantum technology[4].

Recent Advances in Patterning Strategies for Full‑Color Perovskite Light‑Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability,pure color emission with remarkably narrow bandwidths,high quantum yield,and solution processability.Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes(PeLEDs)to their theoretical limits,their current fabrication using the spincoating process poses limitations for fabrication of full-color displays.To integrate PeLEDs into full-color display panels,it is crucial to pattern red–green–blue(RGB)perovskite pixels,while mitigating issues such as cross-contamination and reductions in luminous efficiency.Herein,we present state-of-the-art patterning technologies for the development of full-color PeLEDs.First,we highlight recent advances in the development of efficient PeLEDs.Second,we discuss various patterning techniques of MPHs(i.e.,photolithography,inkjet printing,electron beam lithography and laserassisted lithography,electrohydrodynamic jet printing,thermal evaporation,and transfer printing)for fabrication of RGB pixelated displays.These patterning techniques can be classified into two distinct approaches:in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals.This review highlights advancements and limitations in patterning techniques for PeLEDs,paving the way for integrating PeLEDs into full-color panels.

Suppressing the Undesirable Energy Loss in Solution-Processed Hyperfluorescent OLEDs Employing BODIPY-Based Hybridized Local and Charge-Transfer Emitter

Hyperfluorescent organic light-emitting diodes(HF-OLEDs)approach has made it possible to achieve excellent device performance and color purity with low roll-off using noble-metal-free pure organic emitter.Despite significant progress,the performance of HF-OLEDs is still unsatisfactory due to the existence of a competitive dexter energy transfer(DET)pathway.In this contribution,two boron dipyrromethene(BODIPY)-based donor-acceptor emitters(BDP-C-Cz and BDP-N-Cz)with hybridized local and charge transfer characteristics(HLCT)are introduced in the HF-OLED to suppress the exciton loss by dexter mechanism,and a breakthrough performance with low-efficiency roll-off(0.3%)even at high brightness(1000 cd m^(-2))is achieved.It is demonstrated that the energy loss via the DET channel can be suppressed in HF-OLEDs utilizing the HLCT emitter,as the excitons from the dark triplet state of such emitters are funneled to its emissive singlet state following the hot-exciton mechanism.The developed HF-OLED device has realized a good maximum external quantum efficiency(EQE)of 19.25%at brightness of 1000 cd m^(-2)and maximum luminance over 60000 cd m^(-2),with an emission peak at 602 nm and Commission International de L'Eclairage(CIE)coordinates(0.57,0.41),which is among the best-achieved results in solution-processed HF-OLEDs.This work presents a viable methodology to suppress energy loss and achieve high performance in the HF-OLEDs.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

A nitrogen-polarity(N-polarity)GaN-based high electron mobility transistor(HEMT)shows great potential for high-fre-quency solid-state power amplifier applications because its two-dimensional electron gas(2DEG)density and mobility are mini-mally affected by device scaling.However,the Schottky barrier height(SBH)of N-polarity GaN is low.This leads to a large gate leakage in N-polarity GaN-based HEMTs.In this work,we investigate the effect of annealing on the electrical characteristics of N-polarity GaN-based Schottky barrier diodes(SBDs)with Ni/Au electrodes.Our results show that the annealing time and tem-perature have a large influence on the electrical properties of N-polarity GaN SBDs.Compared to the N-polarity SBD without annealing,the SBH and rectification ratio at±5 V of the SBD are increased from 0.51 eV and 30 to 0.77 eV and 7700,respec-tively,and the ideal factor of the SBD is decreased from 1.66 to 1.54 after an optimized annealing process.Our analysis results suggest that the improvement of the electrical properties of SBDs after annealing is mainly due to the reduction of the inter-face state density between Schottky contact metals and N-polarity GaN and the increase of barrier height for the electron emis-sion from the trap state at low reverse bias.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

The rise of supercapacitor diodes:Current progresses and future challenges

Supercapacitor has been widely known as a representative electrochemical energy storage device with high power density and long lifespan.Recently,with the deeper understanding of its charge storage mechanism,unidirectional-charging supercapacitor,also called supercapacitor diode(CAPode),is successfully developed based on the ion-sieving effect of its working electrode towards electrolyte ions.Because CAPode integrates mobile ion and mobile electron in one hybrid circuit,it has a great potential in the emerging fields of ion/electron coupling logic operations,human–machine interface,neural network interaction,and in vivo diagnosis and treatment.Accordingly,we herein elucidate the working mechanism and design philosophy of CAPode,and summarize the electrode materials that are suitable for constructing CAPode.Meanwhile,some other supercapacitor-based devices beyond CAPode are also introduced,and their potential applications are instructively presented.Finally,we outline the challenges and chances of CAPode-related techniques.

Peripheral carbazole units-decorated MR emitter containing B−N covalent bond for highly efficient green OLEDs with low roll-off

Boron−nitrogen doped multiple resonance(BN-MR)emitters,characterized by B−N covalent bonds,offer distinctive advantages as pivotal building blocks for facile access to novel MR emitters featuring narrowband spectra and high efficiency.However,there remains a scarcity of exploration concerning synthetic methods and structural derivations to expand the library of novel BN-MR emitters.Herein,we present the synthesis of a BN-MR emitter,tCz[B−N]N,through a one-pot borylation reaction directed by the amine group,achieving an impressive yield of 94%.The emitter is decorated by incorporating two 3,6-di-tbutylcarbazole(tCz)units into a B−N covalent bond doped BN-MR parent molecule via para-C−π−D and para-N−π−D conjugations.This peripheral decoration strategy enhances the reverse intersystem crossing process and shifts the emission band towards the pure green region,peaking at 526 nm with a narrowband full-width at half maximum(FWHM)of 41 nm.Consequently,organic light emitting diodes(OLEDs)employing this emitter achieved a maximum external quantum efficiency(EQEmax)value of 27.7%,with minimal efficiency roll-off.Even at a practical luminance of 1000 cd·m^(−2),the device maintains a high EQE value of 24.6%.

UVC-LEDs辐照对芒果保鲜期的影响

为了探究以UVC-LEDs为光源的紫外辐照技术在芒果贮运保鲜中的应用性能,设计了一款便携式食品杀菌保鲜装置。使用该装置对“台农一号”芒果进行紫外线杀菌,并比较不同剂量紫外辐照对芒果感官特征的影响。结果表明,UV-C处理可以推迟芒果病斑出现的时间,其中,161 mJ/cm^(2)剂量的紫外线辐照可以将芒果保鲜期延长3~4 d。以UVC-LEDs为光源的便携式食品杀菌保鲜装置对芒果的保鲜效果较好,可为今后食品杀菌保鲜产品的应用开发提供依据。

Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes

A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion irradiation.We propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments results.The irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse voltage.Micro-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS diodes.We combined the degraded performance of irradiated samples with SFs introduced by heavy ion irradiation.Finally,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion irradiation.It was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the substrate.The proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.