Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particl...Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particles and background gas molecules.The dynamic evolution of the plasma sheath,as well as the flux and energy distribution of ions impacting on the mirror surface,was discussed.It was found that the emission of secondary electrons under the EUV irradiation on the ruthenium mirror coating creates a positively charged wall and then prevents the ions from impacting on the mirror and therefore changes the flux and energy distribution of ions reaching the mirror.Furthermore,gas pressure has a notable effect on the plasma sheath and the characteristics of the ions impinging on the mirrors.With greater gas pressure,the sheath potential decreases more rapidly.The flux of ions received by the mirror grows approximately linearly and at the same time the energy corresponding to the peak flux decreases slightly.However,the EUV source intensity barely changes the sheath potential,and its influence on the ion impact is mainly limited to the approximate linear increase in ion flux.展开更多
Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively u...Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.展开更多
An extreme ultraviolet solar corona multispectral imager can allow direct observation of high temperature coronal plasma,which is related to solar flares,coronal mass ejections and other significant coronal activities...An extreme ultraviolet solar corona multispectral imager can allow direct observation of high temperature coronal plasma,which is related to solar flares,coronal mass ejections and other significant coronal activities.This manuscript proposes a novel end-to-end computational design method for an extreme ultraviolet(EUV)solar corona multispectral imager operating at wavelengths near 100 nm,including a stray light suppression design and computational image recovery.To suppress the strong stray light from the solar disk,an outer opto-mechanical structure is designed to protect the imaging component of the system.Considering the low reflectivity(less than 70%)and strong-scattering(roughness)of existing extreme ultraviolet optical elements,the imaging component comprises only a primary mirror and a curved grating.A Lyot aperture is used to further suppress any residual stray light.Finally,a deep learning computational imaging method is used to correct the individual multi-wavelength images from the original recorded multi-slit data.In results and data,this can achieve a far-field angular resolution below 7",and spectral resolution below 0.05 nm.The field of view is±3 R_(☉)along the multi-slit moving direction,where R☉represents the radius of the solar disk.The ratio of the corona's stray light intensity to the solar center's irradiation intensity is less than 10-6 at the circle of 1.3 R_(☉).展开更多
In this review,we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet(EUV)lithography.EUV lithography is a game-changin...In this review,we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet(EUV)lithography.EUV lithography is a game-changing piece of technology for high-volume manufacturing of commercial semiconductors.Many top manufacturers apply EUV technology for fabricating the most critical layers of 7 nm chips.Fabrication and inspection of defect-free masks,however,still remain critical issues in EUV technology.Thus,in our pursuit for a resolution,we have developed the coherent EUV scatterometry microscope(CSM)system with a synchrotron radiation(SR)source to establish the actinic metrology,along with inspection algorithms.The intensity and phase images of patterned EUV masks were reconstructed from diffraction patterns using ptychography algorithms.To expedite the practical application of the CSM,we have also developed a standalone CSM,based on high-order harmonic generation,as an alternative to the SR-CSM.Since the application of a coherent 13.5 nm harmonic enabled the production of a high contrast diffraction pattern,diffraction patterns of sub-100 ns size defects in a 2D periodic pattern mask could be observed.Reconstruction of intensity and phase images from diffraction patterns were also performed for a periodic line-and-space structure,an aperiodic angle edge structure,as well as a cross pattern in an EUV mask.展开更多
Extreme ultraviolet （EUV） spectroscopy has been developed for impurity diagnostics in HL-2A tokamak. The EUV spectrometer consists of an entrance slit, a holographic varied-line- space （VLS） grating, a back-illumi...Extreme ultraviolet （EUV） spectroscopy has been developed for impurity diagnostics in HL-2A tokamak. The EUV spectrometer consists of an entrance slit, a holographic varied-line- space （VLS） grating, a back-illuminated charge-coupled device （CCD） and a laser light source for optical alignment. Spectral lines in wavelength region of 20-500 A observed from HL-2A plasmas were analyzed to study the impurity behavior. Spectral and temporal resolutions used for the analysis were 0.19A at CV （2×33.73 ,h,） and 6 ms, respectively. It was found that carbon, oxygen and iron impurities were usually dominant in the HL-2A plasma. They almost disappeared when the siliconization was carried out. Although the EUV spectra were entirely replaced by the silicon emissions just after the siliconization, the emissions were considerably decreased with accumulation of discharges. Aluminum and neon were externally introduced into the HL-2A plasma based on laser blow-off （LBO） and supersonic molecular beam injection （SMBI） techniques for a trial of the impurity transport study, respectively. The preliminary result is presented for time behavior of EUV spectral lines.展开更多
基金supported by National Natural Science Foundation of China(Nos.12172356,U23B20110)the Interdisciplinary and Collaborative Teams of CAS。
文摘Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particles and background gas molecules.The dynamic evolution of the plasma sheath,as well as the flux and energy distribution of ions impacting on the mirror surface,was discussed.It was found that the emission of secondary electrons under the EUV irradiation on the ruthenium mirror coating creates a positively charged wall and then prevents the ions from impacting on the mirror and therefore changes the flux and energy distribution of ions reaching the mirror.Furthermore,gas pressure has a notable effect on the plasma sheath and the characteristics of the ions impinging on the mirrors.With greater gas pressure,the sheath potential decreases more rapidly.The flux of ions received by the mirror grows approximately linearly and at the same time the energy corresponding to the peak flux decreases slightly.However,the EUV source intensity barely changes the sheath potential,and its influence on the ion impact is mainly limited to the approximate linear increase in ion flux.
基金financially supported by National Natural Science Foundation of China (No. 62274181,62204257 and 62374016)Chinese Ministry of Science and Technology (No. 2019YFB2205005)+4 种基金Guangdong Province Research and Development Program in Key Fields (No. 2021B0101280002)the support from Youth Innovation Promotion Association Chinese Academy of Sciences (No. 2021115)Beijing Institute of ElectronicsBeijing Association for Science and Technology as well,the support from University of Chinese Academy of Sciences (No. 118900M032)China Fundamental Research Funds for the Central Universities (No. E2ET3801)
文摘Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.
基金This study is partially supported by the National Natural Science Foundation of China(NSFC)(62005120,62125504).
文摘An extreme ultraviolet solar corona multispectral imager can allow direct observation of high temperature coronal plasma,which is related to solar flares,coronal mass ejections and other significant coronal activities.This manuscript proposes a novel end-to-end computational design method for an extreme ultraviolet(EUV)solar corona multispectral imager operating at wavelengths near 100 nm,including a stray light suppression design and computational image recovery.To suppress the strong stray light from the solar disk,an outer opto-mechanical structure is designed to protect the imaging component of the system.Considering the low reflectivity(less than 70%)and strong-scattering(roughness)of existing extreme ultraviolet optical elements,the imaging component comprises only a primary mirror and a curved grating.A Lyot aperture is used to further suppress any residual stray light.Finally,a deep learning computational imaging method is used to correct the individual multi-wavelength images from the original recorded multi-slit data.In results and data,this can achieve a far-field angular resolution below 7",and spectral resolution below 0.05 nm.The field of view is±3 R_(☉)along the multi-slit moving direction,where R☉represents the radius of the solar disk.The ratio of the corona's stray light intensity to the solar center's irradiation intensity is less than 10-6 at the circle of 1.3 R_(☉).
文摘In this review,we describe our research on the development of the 13.5 nm coherent microscope using high-order harmonics for the mask inspection of extreme ultraviolet(EUV)lithography.EUV lithography is a game-changing piece of technology for high-volume manufacturing of commercial semiconductors.Many top manufacturers apply EUV technology for fabricating the most critical layers of 7 nm chips.Fabrication and inspection of defect-free masks,however,still remain critical issues in EUV technology.Thus,in our pursuit for a resolution,we have developed the coherent EUV scatterometry microscope(CSM)system with a synchrotron radiation(SR)source to establish the actinic metrology,along with inspection algorithms.The intensity and phase images of patterned EUV masks were reconstructed from diffraction patterns using ptychography algorithms.To expedite the practical application of the CSM,we have also developed a standalone CSM,based on high-order harmonic generation,as an alternative to the SR-CSM.Since the application of a coherent 13.5 nm harmonic enabled the production of a high contrast diffraction pattern,diffraction patterns of sub-100 ns size defects in a 2D periodic pattern mask could be observed.Reconstruction of intensity and phase images from diffraction patterns were also performed for a periodic line-and-space structure,an aperiodic angle edge structure,as well as a cross pattern in an EUV mask.
基金supported partially by National Natural Science Foundation of China(Nos.11175061 and 11375057)the JSPS-NRF-NSFC A3Foresight Program in the field of Plasma Physics(NSFC:No.11261140328)
文摘Extreme ultraviolet （EUV） spectroscopy has been developed for impurity diagnostics in HL-2A tokamak. The EUV spectrometer consists of an entrance slit, a holographic varied-line- space （VLS） grating, a back-illuminated charge-coupled device （CCD） and a laser light source for optical alignment. Spectral lines in wavelength region of 20-500 A observed from HL-2A plasmas were analyzed to study the impurity behavior. Spectral and temporal resolutions used for the analysis were 0.19A at CV （2×33.73 ,h,） and 6 ms, respectively. It was found that carbon, oxygen and iron impurities were usually dominant in the HL-2A plasma. They almost disappeared when the siliconization was carried out. Although the EUV spectra were entirely replaced by the silicon emissions just after the siliconization, the emissions were considerably decreased with accumulation of discharges. Aluminum and neon were externally introduced into the HL-2A plasma based on laser blow-off （LBO） and supersonic molecular beam injection （SMBI） techniques for a trial of the impurity transport study, respectively. The preliminary result is presented for time behavior of EUV spectral lines.
