A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB ban...A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB bandwidth of 10GHz, with a small signal gain of around 9dB. The post-stage distributed amplifier （DA） has a -3dB bandwidth of close to 20GHz,with a small signal gain of around 12dB. As a whole,the cascade preamplifier has a measured small signal gain of 21.3dB and a transimpedance of 55.3dBΩ in a 50Ω system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence is clear and symmetric.展开更多
A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gai...A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.展开更多
For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- taine...For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.展开更多
In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor...In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.展开更多
This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm ...This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The ...The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.展开更多
基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,...基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。展开更多
文摘A high gain cascade connected preamplifier for optical receivers is developed with 0.5μm GaAs PHEMT technology from the Nanjing Electronic Devices Institute. To begin with, the transimpedance amplifier has a -3dB bandwidth of 10GHz, with a small signal gain of around 9dB. The post-stage distributed amplifier （DA） has a -3dB bandwidth of close to 20GHz,with a small signal gain of around 12dB. As a whole,the cascade preamplifier has a measured small signal gain of 21.3dB and a transimpedance of 55.3dBΩ in a 50Ω system. With a higher signal-to-noise ratio than that of the TIA and a markedly improved waveform distortion compared with that of the DA, the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence is clear and symmetric.
文摘A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.
文摘For enhancement-mode InGaP/A1GaAs/InGaAs PHEMTs,gate annealing is conducted between gate structures of Ti/Pt/Au and Pt/Ti/Pt/Au. Comparison is made after thermal annealing and an optimum annealing process is ob- tained. Using the structure of Ti/Pt/Au, about a 200mV positive shift of threshold voltage is achieved by thermal annea- ling at 320℃ for 40min in N2 ambient. Finally, a stable and consistent enhancement-mode PHEMT is produced successfully with higher threshold voltage.
文摘In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.
文摘This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode.The extraction method for the proposed model is developed.A 2-gate switch structure is fabricated on a commercial 0.5μm AlGaAs/GaAs pHEMT technology to verify the proposed model.Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
文摘The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.
文摘基于GaAs赝高电子迁移率晶体管（PHEMT）工艺,研制了一种5-12 GHz的收发一体多功能芯片（T/R MFC）,其具有噪声低、增益高和中等功率等特点。电路由低噪声放大器和多个单刀双掷（SPDT）开关构成。为了获得较低的噪声系数和较大的增益,低噪声放大器采用自偏置三级级联拓扑结构;为了获得较高的隔离度和较低的插入损耗,SPDT开关采用串并联结构。测试结果表明,在5-12 GHz频段内,收发一体多功能芯片的小信号增益大于26 d B,噪声系数小于4 d B,输入/输出电压驻波比小于2.0,1 d B压缩点输出功率大于15 d Bm。其中,放大器为单电源5 V供电,静态电流小于120 m A;开关控制电压为-5 V/0 V。芯片尺寸为2.65 mm×2.0 mm。
