The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flo...The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.展开更多
In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously...In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.展开更多
Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequenc...Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.展开更多
Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures. Memristors have been extensively studied for...Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures. Memristors have been extensively studied for using in nonvolatile memory storage and neuromorphic computing. In this paper, we report the fabrication of vertical sandwiched memristor device using ultrathin quasi-two-dimensional gallium oxide produced by squeegee method. The as-fabricated two-terminal memristor device exhibited the essential functions of biological synapses, such as depression and potentiation of synaptic weight, transition from short time memory to long time memory, spike-timing-dependent plasticity, and spike-rate-dependent plasticity. The synaptic weight of the memristor could be tuned by the applied voltage pulse, number,width, and frequency. We believe that the injection of the top Ag cations should play a significant role for the memristor phenomenon. The ultrathin of medium layer represents an advance to integration in vertical direction for future applications and our results provide an alternative way to fabricate synaptic devices.展开更多
With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material para...With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.展开更多
Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth proc...Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality𝛽-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed.展开更多
Three different nanorod-like gallium oxides with mono/poly-crystalline nature(α, β, and α/β-Ga2O3) were prepared by regulating the amount of polyethylene glycol(PEG) 6000 in the range of 0.2–0.8 g proportionally ...Three different nanorod-like gallium oxides with mono/poly-crystalline nature(α, β, and α/β-Ga2O3) were prepared by regulating the amount of polyethylene glycol(PEG) 6000 in the range of 0.2–0.8 g proportionally via a hydrothermal method combined with further calcination. The bandgap of the products, given by UV-Vis diffuse reflectance spectra(UV-Vis DRS), was in the order of α-Ga2O3 > α/β-Ga2O3 > β-Ga2O3. To further investigate the photocatalysis performance of the catalysts, the decomposition of rhodamine B(Rh B) by Ga2O3 under UV light illumination(λ < 387 nm) was presented and complete degradation could be achieved within 30 min, a result that showed the highest efficiency. The photocatalytic oxidation mechanism is further discussed and prominently related to the active species: hydroxyl radical(·OH) and superoxide radical(O·-2), which were confirmed by electron paramagnetic resonance(EPR).展开更多
The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transisto...The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.展开更多
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transist...In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.展开更多
Zinc oxide (ZnO) is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and ...Zinc oxide (ZnO) is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements' chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.展开更多
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) we...Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.展开更多
Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties ...Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.展开更多
A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffract...A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique.The density of defects was estimated from the average value of etch pits calculated,including near-edge regions,and was obtained close to 109 cm^(-2).Blocks with lattice orientation deviated by angles of 1-3 arcmin,as well as non-stoichiometric fractions with a relative strain about(1.0-1.5)×10^(-4)in the[201]direction,were found.Crystal perfection was shown to decrease significantly towards the cutting lines of the samples.To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility,the thermal annealing was employed.Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100℃ was observed.The fractions characterized by non-stoichiometry phases and the block deviation disappeared.The annealing for 11 h improved the homogeneity and perfection in the crystals.The average density of the etch pits dropped down significantly to 8×10^(6) cm^(-2).展开更多
This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction ...This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.展开更多
Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the ver...Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.展开更多
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and l...As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.展开更多
Investigation of the charge dynamics and roles of cocatalysts is crucial for understanding the reaction of photocatalytic water splitting on semiconductor photocatalysts.In this work,the dynamics of photogenerated ele...Investigation of the charge dynamics and roles of cocatalysts is crucial for understanding the reaction of photocatalytic water splitting on semiconductor photocatalysts.In this work,the dynamics of photogenerated electrons in Ga_(2)O_(3) loaded with Cr_(2)O_(3)-Rh cocatalysts was studied using time-resolved mid-infrared spectroscopy.The structure of these Cr_(2)O_(3)-Rh cocatalysts was identified with high-resolution transmission electron microscopy and CO adsorption Fourier-transform infrared spectroscopy,as Rh particles partly covered with Cr_(2)O_(3).The decay dynamics of photogenerated electrons reveals that only the electrons trapped by the Rh particles efficiently participate in the H2 evolution reaction.The loaded Cr_(2)O_(3) promotes electron transfer from Ga_(2)O_(3) to Rh,which accelerates the electron-consuming reaction for H2 evolution.Based on these observations,a photocatalytic water-splitting mechanism for Cr_(2)O_(3)-Rh/Ga_(2)O_(3) photocatalysts has been proposed.The elucidation of the roles of the Cr_(2)O_(3)-Rh cocatalysts aids in further understanding the reaction mechanisms of photocatalytic water splitting and guiding the development of improved photocatalysts.展开更多
Monoclinic gallium oxide (βGa2O3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an axgon atmosphere and their NO2 sensing properties are studied at room temperature. Electron microscop...Monoclinic gallium oxide (βGa2O3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an axgon atmosphere and their NO2 sensing properties are studied at room temperature. Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers. Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga203 nanobelts have grown into single crystals. Room temperature NO2 sensing tests show that the current of individual β-Ga2O3 nanobelt decreases quickly, and then gently when the NO2 concentration increases from low to high. It is caused by the NO2 molecule chemisorption and desorption processes in the surface of β-Ga2O3 nanobelt.展开更多
High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of...High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10^6 %. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10^18 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10%2% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga203 thin films and the n-type conductive β-Ga203 single-crystal substrate.展开更多
A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is fo...A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga_(2)O_(3) MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10^(16) cm^(-3),less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61505109)Youth Innovative Talents Attracting and Cultivating Plan of Colleges and Universities in Shandong Province(No.21)+1 种基金Youth Innovation Team of colleges and universities in Shandong Province(Grant No.2022KJ223)Shandong Provincial Natural Science Foundation(Grant No.ZR2021QF020).
文摘The anisotropic properties and applications ofβ-gallium oxide(β-Ga_(2)O_(3))are comprehensively reviewed.All the anisotropic properties are essentially resulted from the anisotropic crystal structure.The process flow of how to exfoliate nanoflakes from bulk material is introduced.Anisotropic optical properties,including optical bandgap,Raman and photolumines-cence characters are comprehensively reviewed.Three measurement configurations of angle-resolved polarized Raman spec-tra(ARPRS)are reviewed,with Raman intensity formulas calculated with Raman tensor elements.The method to obtain the Raman tensor elements of phonon modes through experimental fitting is also introduced.In addition,the anisotropy in elec-tron mobility and affinity are discussed.The applications,especially polarization photodetectors,based onβ-Ga_(2)O_(3)were summa-rized comprehensively.Three kinds of polarization detection mechanisms based on material dichroism,1D morphology and metal-grids are discussed in-depth.This review paper provides a framework for anisotropic optical and electric properties ofβ-Ga_(2)O_(3),as well as the applications based on these characters,and is expected to lead to a wider discussion on this topic.
基金supported by the National Natural Science Foundation of China under Grant(62174068,61625404).
文摘In the era of accelerated development in artificial intelligence as well as explosive growth of information and data throughput,underlying hardware devices that can integrate perception and memory while simultaneously offering the bene-fits of low power consumption and high transmission rates are particularly valuable.Neuromorphic devices inspired by the human brain are considered to be one of the most promising successors to the efficient in-sensory process.In this paper,a homojunction-based multi-functional optoelectronic synapse(MFOS)is proposed and testified.It enables a series of basic electri-cal synaptic plasticity,including paired-pulse facilitation/depression(PPF/PPD)and long-term promotion/depression(LTP/LTD).In addition,the synaptic behaviors induced by electrical signals could be instead achieved through optical signals,where its sen-sitivity to optical frequency allows the MFOS to simulate high-pass filtering applications in situ and the perception capability integrated into memory endows it with the information acquisition and processing functions as a visual system.Meanwhile,the MFOS exhibits its performances of associative learning and logic gates following the illumination with two different wave-lengths.As a result,the proposed MFOS offers a solution for the realization of intelligent visual system and bionic electronic eye,and will provide more diverse application scenarios for future neuromorphic computing.
基金partially supported by the Scientific Research (No. 16K06268)the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan
文摘Gallium oxide was deposited on a c-plane sapphire substrate by oxygen plasma-assisted pulsed laser deposition(PLD).An oxygen radical was generated by an inductive coupled plasma source and the effect of radio frequency(RF)power on growth rate was investigated.A film grown with plasma assistance showed 2.7 times faster growth rate.X-ray diffraction and Raman spectroscopy analysis showedβ-Ga2 O3 films grown with plasma assistance at 500℃.The roughness of the films decreased when the RF power of plasma treatment increased.Transmittance of these films was at least 80%and showed sharp absorption edge at 250 nm which was consistent with data previously reported.
基金the National Natural Science Foundation of China(Grant No.11834017)the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(Grant No.XDB30000000)+2 种基金the Key Research Program of Frontier Sciences of the CAS(Grant No.QYZDB-SSW-SLH004)the National Key R&D Program of China(Grant No.2016YFA0300904)the Fundamental Research Funds for the Central Universities,China(Grant No.310421101)
文摘Synapse emulation is very important for realizing neuromorphic computing, which could overcome the energy and throughput limitations of today's computing architectures. Memristors have been extensively studied for using in nonvolatile memory storage and neuromorphic computing. In this paper, we report the fabrication of vertical sandwiched memristor device using ultrathin quasi-two-dimensional gallium oxide produced by squeegee method. The as-fabricated two-terminal memristor device exhibited the essential functions of biological synapses, such as depression and potentiation of synaptic weight, transition from short time memory to long time memory, spike-timing-dependent plasticity, and spike-rate-dependent plasticity. The synaptic weight of the memristor could be tuned by the applied voltage pulse, number,width, and frequency. We believe that the injection of the top Ag cations should play a significant role for the memristor phenomenon. The ultrathin of medium layer represents an advance to integration in vertical direction for future applications and our results provide an alternative way to fabricate synaptic devices.
文摘With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.
基金supported by the National Natural Science Foun-dation of China(Grants No.61925110,U20A20207,61821091,62004184,62004186,61774081,62004147,51932004,52002219,and 51961145110)the Ministry of Science and Technology of China(Grant No.2018YFB0406500)+6 种基金the Strategic Priority Research Pro-gram of the Chinese Academy of Sciences(Grant No.XDB44000000)the Key Research Program of Frontier Sciences of the CAS(Grant No.QYZDB-SSW-JSC048)the Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174002)the Fundamental Research Funds for the Central Universities under(Grants No.WK2100000014 and WK2100000010)funding sup-port from the University of Science and Technology of China(Grant No.KY2100000109)the China Postdoctoral Science Foundation(Grants No.2020M671895 and BX20200320)the Opening Project of the Key Laboratory of Microelectronics Devices and Integration Technology at the Institute of Microelectronics of CAS,and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘Owing to the advantages of ultra-wide bandgap and rich material systems,gallium oxide(Ga_(2)O_(3))has emerged as a highly viable semiconductor material for new researches.This article mainly focuses on the growth processes,material characteristics,and applications of Ga_(2)O_(3).Compared with single crystals and the epitaxial growth of other wide-bandgap semiconductors,large-size and high-quality𝛽-Ga_(2)O_(3) single crystals can be efficiently grown with a low cost,making them highly competitive.Thanks to the availability of high-quality single crystals,epi-taxial films,and rich material systems,high-performance semiconductor devices based on Ga_(2)O_(3) go through a booming development in recent years.The defects and interfaces of Ga_(2)O_(3) are comprehensively analyzed owing to their significant influence on practical applications.In this study,the two most common applications of Ga_(2)O_(3) materials are introduced.The high breakdown electric field,high working temperature,and excellent Baliga’s figure-of-merit of Ga_(2)O_(3) represent an inspiring prospect for power electronic devices.In addition,the excellent absorption in deep-ultraviolet band provides new ideas for optoelectronic detectors and ensures the dramatic progress.Finally,the summary,challenges,and prospects of the Ga_(2)O_(3) materials and devices are presented and discussed.
基金funded by the National Natural Science Foundation of China(21377067,21177072,and 21207079)the Natural Science Foundation for the Innovation Group of Hubei Province,China(2009CDA020)
文摘Three different nanorod-like gallium oxides with mono/poly-crystalline nature(α, β, and α/β-Ga2O3) were prepared by regulating the amount of polyethylene glycol(PEG) 6000 in the range of 0.2–0.8 g proportionally via a hydrothermal method combined with further calcination. The bandgap of the products, given by UV-Vis diffuse reflectance spectra(UV-Vis DRS), was in the order of α-Ga2O3 > α/β-Ga2O3 > β-Ga2O3. To further investigate the photocatalysis performance of the catalysts, the decomposition of rhodamine B(Rh B) by Ga2O3 under UV light illumination(λ < 387 nm) was presented and complete degradation could be achieved within 30 min, a result that showed the highest efficiency. The photocatalytic oxidation mechanism is further discussed and prominently related to the active species: hydroxyl radical(·OH) and superoxide radical(O·-2), which were confirmed by electron paramagnetic resonance(EPR).
基金Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900 and 2011CB922100)the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.
基金Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.021014380033)
文摘In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.
基金Supported by the RU Top-Down under Grant No 1001/CSS/870019
文摘Zinc oxide (ZnO) is one of the most promising and frequently used semiconductor materials. In-doped nanos- tructure ZnO thin films are grown on p-type gallium nitride substrates by employing the simultaneous rf and dc magnetron co-sputtering technique. The effect of In-doping on structural, morphological and electrical properties is studied. The different dopant concentrations are accomplished by varying the direct current power of the In target while keeping the fixed radio frequency power of the ZnO target through the co-sputtering deposition technique by using argon as the sputtering gas at ambient temperature. The structural analysis confirms that all the grown thin films preferentially orientate along the c-axis with the wurtzite hexagonal crystal structure without having any kind of In oxide phases. The presenting Zn, 0 and In elements' chemical compositions are identified with EDX mapping analysis of the deposited thin films and the calculated M ratio has been found to decrease with the increasing In power. The surface topographies of the grown thin films are examined with the atomic force microscope technique. The obtained results reveal that the grown film roughness increases with the In power. The Hall measurements ascertain that all the grown films have n-type conductivity and also the other electrical parameters such as resistivity,mobility and carrier concentration are analyzed.
基金support of the Russian Science Foundation,grant number 20-79-10043-P.
文摘Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
基金supported by the Guangdong Basic and Applied Basic Research Foundation under Grant No. 2022A1515012163。
文摘Beta gallium oxide(β-Ga_(2)O_(3)) has attracted significant attention for applications in power electronics due to its ultrawide bandgap of ~ 4.8 eV and the large critical electric field of 8 MV/cm. These properties yield a high Baliga's figures of merit(BFOM) of more than 3000. Though β-Ga_(2)O_(3) possesses superior material properties, the lack of p-type doping is the main obstacle that hinders the development of β-Ga_(2)O_(3)-based power devices for commercial use. Constructing heterojunctions by employing other p-type materials has been proven to be a feasible solution to this issue. Nickel oxide(NiO) is the most promising candidate due to its wide band gap of 3.6–4.0 eV. So far, remarkable progress has been made in NiO/β-Ga_(2)O_(3) heterojunction power devices. This review aims to summarize recent advances in the construction, characterization, and device performance of the NiO/β-Ga_(2)O_(3) heterojunction power devices. The crystallinity, band structure, and carrier transport property of the sputtered NiO/β-Ga_(2)O_(3) heterojunctions are discussed. Various device architectures, including the NiO/β-Ga_(2)O_(3) heterojunction pn diodes(HJDs), junction barrier Schottky(JBS) diodes, and junction field effect transistors(JFET), as well as the edge terminations and super-junctions based on the NiO/β-Ga_(2)O_(3) heterojunction, are described.
基金funded by the Russian Science Foundation,project#23-29-10196。
文摘A commercial epi-ready(201)β-Ga_(2)O_(3) wafer was investigated upon diamond sawing into pieces measuring 2.5×3 mm^(2).The defect structure and crystallinity in the cut samples has been studied by X-ray diffraction and a selective wet etching technique.The density of defects was estimated from the average value of etch pits calculated,including near-edge regions,and was obtained close to 109 cm^(-2).Blocks with lattice orientation deviated by angles of 1-3 arcmin,as well as non-stoichiometric fractions with a relative strain about(1.0-1.5)×10^(-4)in the[201]direction,were found.Crystal perfection was shown to decrease significantly towards the cutting lines of the samples.To reduce the number of structural defects and increase the crystal perfection of the samples via increasing defect motion mobility,the thermal annealing was employed.Polygonization and formation of a mosaic structure coupled with dislocation wall appearance upon 3 h of annealing at 1100℃ was observed.The fractions characterized by non-stoichiometry phases and the block deviation disappeared.The annealing for 11 h improved the homogeneity and perfection in the crystals.The average density of the etch pits dropped down significantly to 8×10^(6) cm^(-2).
基金supported by the Zhejiang Provincial Natural Science Foundation under (Grant No. LZ21F040001)the Pioneer Hundred Talents Program of Chinese Academy of Sciencesthe Ningbo Yongjiang Talent Introduction Programme and the Ningbo Key Scientific and Technological Project (Grant No. 2022Z016)。
文摘This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61925110,U20A20207,62004184,62004186,and 62234007)the Key-Area Research and Development Program of Guangdong Province (Grant No.2020B010174002)+3 种基金the funding support from University of Science and Technology of China (USTC) (Grant Nos.YD2100002009 and YD2100002010)the Fundamental Research Plan (Grant No.JCKY2020110B010)Collaborative Innovation Program of Hefei Science Center,Chinese Academy of Sciences (Grant No.2022HSC-CIP024)the Opening Project of and the Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS。
文摘Recently,β-Ga_(2)O_(3),an ultra-wide bandgap semiconductor,has shown great potential to be used in power devices blessed with its unique material properties.For instance,the measured average critical field of the vertical Schottky barrier diode(SBD)based onβ-Ga_(2)O_(3) has reached 5.45 MV/cm,and no device in any material has measured a greater before.However,the high electric field of theβ-Ga_(2)O_(3) SBD makes it challenging to manage the electric field distribution and leakage current.Here,we showβ-Ga_(2)O_(3) junction barrier Schottky diode with NiO p-well floating field rings(FFRs).For the central anode,we filled a circular trench array with NiO to reduce the surface field under the Schottky contact between them to reduce the leakage current of the device.For the anode edge,experimental results have demonstrated that the produced NiO/β-Ga_(2)O_(3) heterojunction FFRs enable the spreading of the depletion region,thereby mitigating the crowding effect of electric fields at the anode edge.Additionally,simulation results indicated that the p-NiO field plate structure designed at the edges of the rings and central anode can further reduce the electric field.This work verified the feasibility of the heterojunction FFRs inβ-Ga_(2)O_(3) devices based on the experimental findings and provided ideas for managing the electric field ofβ-Ga_(2)O_(3) SBD.
基金supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166)the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603)+2 种基金the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001)the Beijing Municipal Science and Technology Project(No.Z171100002017011)the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences
文摘As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.
文摘Investigation of the charge dynamics and roles of cocatalysts is crucial for understanding the reaction of photocatalytic water splitting on semiconductor photocatalysts.In this work,the dynamics of photogenerated electrons in Ga_(2)O_(3) loaded with Cr_(2)O_(3)-Rh cocatalysts was studied using time-resolved mid-infrared spectroscopy.The structure of these Cr_(2)O_(3)-Rh cocatalysts was identified with high-resolution transmission electron microscopy and CO adsorption Fourier-transform infrared spectroscopy,as Rh particles partly covered with Cr_(2)O_(3).The decay dynamics of photogenerated electrons reveals that only the electrons trapped by the Rh particles efficiently participate in the H2 evolution reaction.The loaded Cr_(2)O_(3) promotes electron transfer from Ga_(2)O_(3) to Rh,which accelerates the electron-consuming reaction for H2 evolution.Based on these observations,a photocatalytic water-splitting mechanism for Cr_(2)O_(3)-Rh/Ga_(2)O_(3) photocatalysts has been proposed.The elucidation of the roles of the Cr_(2)O_(3)-Rh cocatalysts aids in further understanding the reaction mechanisms of photocatalytic water splitting and guiding the development of improved photocatalysts.
文摘Monoclinic gallium oxide (βGa2O3) nanobelts are synthesized from gallium and oxygen by thermal evaporation in an axgon atmosphere and their NO2 sensing properties are studied at room temperature. Electron microscopy studies show that the nanobelts have breadths ranging from 30 to 50 nm and lengths up to tens of micrometers. Both the x-ray diffraction (XRD) and the selected are electron diffraction (SAED) examinations indicate that β-Ga203 nanobelts have grown into single crystals. Room temperature NO2 sensing tests show that the current of individual β-Ga2O3 nanobelt decreases quickly, and then gently when the NO2 concentration increases from low to high. It is caused by the NO2 molecule chemisorption and desorption processes in the surface of β-Ga2O3 nanobelt.
基金supported by the National Nature Science Foundation of China(Grant No.61223002)the Science and Technology Commission of Shanghai Municipality,China(Grant No.13111103700)the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.2012018530003)
文摘High-resistivity β-Ga203 thin films were grown on Si-doped n-type conductive β-Ga203 single crystals by molecular beam epitaxy (MBE). Vertical-type Schottky diodes were fabricated, and the electrical properties of the Schottky diodes were studied in this letter. The ideality factor and the series resistance of the Schottky diodes were estimated to be about 1.4 and 4.6 x 10^6 %. The ionized donor concentration and the spreading voltage in the Schottky diodes region are about 4 x 10^18 cm-3 and 7.6 V, respectively. The ultra-violet (UV) photo-sensitivity of the Schottky diodes was demonstrated by a low-pressure mercury lamp illumination. A photoresponsivity of 1.8 A/W and an external quantum efficiency of 8.7 x 10%2% were observed at forward bias voltage of 3.8 V, the proper driving voltage of read-out integrated circuit for UV camera. The gain of the Schottky diode was attributed to the existence of a potential barrier in the i-n junction between the MBE-grown highly resistive β-Ga203 thin films and the n-type conductive β-Ga203 single-crystal substrate.
基金the National Natural Science Foundation of China(Grant Nos.61974119,51602241,and 61834005)the Natural Science Foundation of Shannxi Province,China(Grant No.2020JM-532)the Science Foundation of Xi’an University of Science and Technology(Grant No.2018QDJ036).
文摘A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is found that the concentration of the source region and the width coupled with the height of the channel mainly effect the on-state characteristics.The metal material of the gate,the oxide material,the oxide thickness,and the epitaxial layer concentration strongly affect the threshold voltage and the output currents.Enabling an E-mode MOSFET device requires a large work function gate metal and an oxide with large dielectric constant.When the output current density of the device increases,the source concentration,the thickness of the epitaxial layer,and the total width of the device need to be expanded.The threshold voltage decreases with the increase of the width of the channel area under the same gate voltage.It is indicated that a set of optimal parameters of a practical vertical enhancement-mode Ga_(2)O_(3) MOSFET requires the epitaxial layer concentration,the channel height of the device,the thickness of the source region,and the oxide thickness of the device should be less than 5×10^(16) cm^(-3),less than 1.5μm,between 0.1μm-0.3μm and less than 0.08μm,respectively.