In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film...In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.展开更多
Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to spe...Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.展开更多
Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information ...Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.展开更多
Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion...Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.展开更多
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.展开更多
In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asym...In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.展开更多
Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chi...Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.展开更多
Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft ...Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft unsteady aerodynamic design and flight dynamics analysis.In this paper,aiming at the problems of poor generalization of traditional aerodynamic models and intelligent models,an intelligent aerodynamic modeling method based on gated neural units is proposed.The time memory characteristics of the gated neural unit is fully utilized,thus the nonlinear flow field characterization ability of the learning and training process is enhanced,and the generalization ability of the whole prediction model is improved.The prediction and verification of the model are carried out under the maneuvering flight condition of NACA0015 airfoil.The results show that the model has good adaptability.In the interpolation prediction,the maximum prediction error of the lift and drag coefficients and the moment coefficient does not exceed 10%,which can basically represent the variation characteristics of the entire flow field.In the construction of extrapolation models,the training model based on the strong nonlinear data has good accuracy for weak nonlinear prediction.Furthermore,the error is larger,even exceeding 20%,which indicates that the extrapolation and generalization capabilities need to be further optimized by integrating physical models.Compared with the conventional state space equation model,the proposed method can improve the extrapolation accuracy and efficiency by 78%and 60%,respectively,which demonstrates the applied potential of this method in aerodynamic modeling.展开更多
Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties ...Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.展开更多
This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart ...This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.展开更多
A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling a...A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.展开更多
The reverse gate leakage mechanism of W-gate and Ti N-gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with N2plasma surface treatment is investigated using current–voltage(I–V)and capacitance–voltage(C–V)c...The reverse gate leakage mechanism of W-gate and Ti N-gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with N2plasma surface treatment is investigated using current–voltage(I–V)and capacitance–voltage(C–V)characteristics and theoretical calculation analysis.It is found that the main reverse gate leakage mechanism of both devices is the trapassisted tunneling(TAT)mechanism in the entire reverse bias region(-30 V to 0 V).It is also found that the reverse gate leakage current of the W-gate Al GaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage.Moreover,the activation energies of the extracted W-gate and Ti N-gate AlGaN/GaN HEMTs are 0.0551 e V–0.127 eV and0.112 eV–0.201 eV,respectively.展开更多
Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap leng...Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.展开更多
Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing ga...Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.展开更多
Optical logic gates play important roles in all-optical logic circuits,which lie at the heart of the next-generation optical computing technology.However,the intrinsic contradiction between compactness and robustness ...Optical logic gates play important roles in all-optical logic circuits,which lie at the heart of the next-generation optical computing technology.However,the intrinsic contradiction between compactness and robustness hinders the development in this field.Here,we propose a simple design principle that can possess multiple-input-output states according to the incident circular polarization and direction based on the metasurface doublet,which enables controlled-NOT logic gates in infrared region.Therefore,the directional asymmetric electromagnetic transmission can be achieved.As a proof of concept,a spin-dependent Janus metasurface is designed and experimentally verified that four distinct images corresponding to four input states can be captured in the far-field.In addition,since the design method is derived from geometric optics,it can be easily applied to other spectra.We believe that the proposed metasurface doublet may empower many potential applications in chiral imaging,chiroptical spectroscopy and optical computing.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.1237310)The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)+1 种基金the National Natural Science Foundation of China(Grant No.92163204)The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。
文摘In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.
基金The authors thank the Yayasan Universiti Teknologi PETRONAS(YUTP FRG Grant No.015LC0-428)at Universiti Teknologi PETRO-NAS for supporting this study.
文摘Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.
基金supported by the National Natural Science Foundation of China(No.62101439)the Key Research and Development Program of Shaanxi(No.2023-YBSF-289).
文摘Optical molecular tomography(OMT)is a potential pre-clinical molecular imaging technique with applications in a variety of biomedical areas,which can provide non-invasive quantitative three-dimensional(3D)information regarding tumor distribution in living animals.The construction of optical transmission models and the application of reconstruction algorithms in traditional model-based reconstruction processes have affected the reconstruction results,resulting in problems such as low accuracy,poor robustness,and long-time consumption.Here,a gates joint locally connected network(GLCN)method is proposed by establishing the mapping relationship between the inside source distribution and the photon density on surface directly,thus avoiding the extra time consumption caused by iteration and the reconstruction errors caused by model inaccuracy.Moreover,gates module was composed of the concatenation and multiplication operators of three different gates.It was embedded into the network aiming at remembering input surface photon density over a period and allowing the network to capture neurons connected to the true source selectively by controlling three different gates.To evaluate the performance of the proposed method,numerical simulations were conducted,whose results demonstrated good performance in terms of reconstruction positioning accuracy and robustness.
基金supported by the National Natural Science Foundation of China(No.62302540)with author Fangfang Shan.For more information,please visit their website at https://www.nsfc.gov.cn/(accessed on 31/05/2024)+3 种基金Additionally,it is also funded by the Open Foundation of Henan Key Laboratory of Cyberspace Situation Awareness(No.HNTS2022020)where Fangfang Shan is an author.Further details can be found at http://xt.hnkjt.gov.cn/data/pingtai/(accessed on 31/05/2024)supported by the Natural Science Foundation of Henan Province Youth Science Fund Project(No.232300420422)for more information,you can visit https://kjt.henan.gov.cn/2022/09-02/2599082.html(accessed on 31/05/2024).
文摘Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.
基金financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254)Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002)+1 种基金the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
文摘Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
文摘In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974336 and 12304401)the National Key R&D Program of China(Grant No.2017YFA0304100)+1 种基金the Key Project of Natural Science Research in Universities of Anhui Province(Grant No.KJ2021A1107)the Scientific Research Foundation of Suzhou University(Grant Nos.2020BS006 and 2021XJPT18).
文摘Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.
基金supported in part by the National Natural Science Foundation of China (No. 12202363)。
文摘Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft unsteady aerodynamic design and flight dynamics analysis.In this paper,aiming at the problems of poor generalization of traditional aerodynamic models and intelligent models,an intelligent aerodynamic modeling method based on gated neural units is proposed.The time memory characteristics of the gated neural unit is fully utilized,thus the nonlinear flow field characterization ability of the learning and training process is enhanced,and the generalization ability of the whole prediction model is improved.The prediction and verification of the model are carried out under the maneuvering flight condition of NACA0015 airfoil.The results show that the model has good adaptability.In the interpolation prediction,the maximum prediction error of the lift and drag coefficients and the moment coefficient does not exceed 10%,which can basically represent the variation characteristics of the entire flow field.In the construction of extrapolation models,the training model based on the strong nonlinear data has good accuracy for weak nonlinear prediction.Furthermore,the error is larger,even exceeding 20%,which indicates that the extrapolation and generalization capabilities need to be further optimized by integrating physical models.Compared with the conventional state space equation model,the proposed method can improve the extrapolation accuracy and efficiency by 78%and 60%,respectively,which demonstrates the applied potential of this method in aerodynamic modeling.
基金supported by the National Natural Science Foundation of China (6202201562088101)+1 种基金Shanghai Municipal Science and Technology Major Project (2021SHZDZX0100)Shanghai Municip al Commission of Science and Technology Project (19511132101)。
文摘Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.
基金support from the National Science and Technology Council of Taiwan(Contract Nos.111-2221 E-011081 and 111-2622-E-011019)the support from Intelligent Manufacturing Innovation Center(IMIC),National Taiwan University of Science and Technology(NTUST),Taipei,Taiwan,which is a Featured Areas Research Center in Higher Education Sprout Project of Ministry of Education(MOE),Taiwan(since 2023)was appreciatedWe also thank Wang Jhan Yang Charitable Trust Fund(Contract No.WJY 2020-HR-01)for its financial support.
文摘This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
基金Project supported by the National Natural Science Foundation of China (Grants No. 61604027 and 61704016)the Chongqing Natural Science Foundation, China (Grant No. cstc2020jcyj-msxmX0550)。
文摘A power MOSFET with integrated split gate and dummy gate(SD-MOS) is proposed and demonstrated by the TCAD SENTAURUS.The split gate is surrounded by the source and shielded by the dummy gate.Consequently,the coupling area between the split gate and the drain electrode is reduced,thus the gate-to-drain charge(Q_(GD)),reverse transfer capacitance(C_(RSS)) and turn-off loss(E_(off)) are significantly decreased.Moreover,the MOS-channel diode is controlled by the dummy gate with ultra-thin gate oxide t_(ox),which can be turned on before the parasitic P-base/N-drift diode at the reverse conduction,then the majority carriers are injected to the N-drift to attenuate the minority injection.Therefore,the reverse recovery charge(Q_(RR)),time(T_(RR)) and peak current(I_(RRM)) are effectively reduced at the reverse freewheeling state.Additionally,the specific on-resistance(R_(on,sp)) and breakdown voltage(BV) are also studied to evaluate the static properties of the proposed SD-MOS.The simulation results show that the Q_(GD) of 6 nC/cm^(2),the C_(RSS) of 1.1 pF/cm^(2) at the V_(DS) of 150 V,the QRR of 1.2 μC/cm^(2) and the R_(on,sp) of 8.4 mΩ·cm^(2) are obtained,thus the figures of merit(FOM) including Q_(GD) ×R_(on,sp) of50 nC·mΩ,E_(off) × R_(on,sp) of 0.59 mJ·mΩ and the Q_(RR) × R_(on,sp) of 10.1 μC·mΩ are achieved for the proposed SD-MOS.
文摘The reverse gate leakage mechanism of W-gate and Ti N-gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with N2plasma surface treatment is investigated using current–voltage(I–V)and capacitance–voltage(C–V)characteristics and theoretical calculation analysis.It is found that the main reverse gate leakage mechanism of both devices is the trapassisted tunneling(TAT)mechanism in the entire reverse bias region(-30 V to 0 V).It is also found that the reverse gate leakage current of the W-gate Al GaN/GaN HEMTs is smaller than that of the TiN gate at high reverse gate bias voltage.Moreover,the activation energies of the extracted W-gate and Ti N-gate AlGaN/GaN HEMTs are 0.0551 e V–0.127 eV and0.112 eV–0.201 eV,respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.52177185 and 62174055)。
文摘Dual-metal gate and gate–drain underlap designs are introduced to reduce the ambipolar current of the device based on the C-shaped pocket TFET(CSP-TFET).The effects of gate work function and gate–drain underlap length on the DC characteristics and analog/RF performance of CSP-TFET devices,such as the on-state current(I_(on)),ambipolar current(I_(amb)),transconductance(g_(m)),cut-off frequency(f_(T))and gain–bandwidth product(GBP),are analyzed and compared in this work.Also,a combination of both the dual-metal gate and gate–drain underlap designs has been proposed for the C-shaped pocket dual metal underlap TFET(CSP-DMUN-TFET),which contains a C-shaped pocket area that significantly increases the on-state current of the device;this combination design substantially reduces the ambipolar current.The results show that the CSP-DMUN-TFET demonstrates an excellent performance,including high I_(on)(9.03×10^(-4)A/μm),high I_(on)/I_(off)(~10^(11)),low SS_(avg)(~13 mV/dec),and low I_(amb)(2.15×10^(-17)A/μm).The CSP-DMUN-TFET has the capability to fully suppress ambipolar currents while maintaining high on-state currents,making it a potential replacement in the next generation of semiconductor devices.
文摘Degradation induced by the negative bias temperature instability(NBTI)can be attributed to three mutually uncoupled physical mechanisms,i.e.,the generation of interface traps(ΔV_(IT)),hole trapping in pre-existing gate oxide defects(ΔV_(HT)),and the generation of gate oxide defects(ΔV_(OT)).In this work,the characteristic of NBTI for p-type MOSFET fabricated by using a 28-nm high-k metal gate(HKMG)process is thoroughly studied.The experimental results show that the degradation is enhanced at a larger stress bias and higher temperature.The effects of the three underlying subcomponents are evaluated by using the comprehensive models.It is found that the generation of interface traps dominates the NBTI degradation during long-time NBTI stress.Moreover,the NBTI parameters of the power-law time exponent and temperature activation energy as well as the gate oxide field acceleration are extracted.The dependence of operating lifetime on stress bias and temperature is also discussed.It is observed that NBTI lifetime significantly decreases as the stress increases.Furthermore,the decrease of charges related to interface traps and hole detrapping in pre-existing gate oxide defects are used to explain the recovery mechanism after stress.
基金supported by the National Natural Science Foundation of China (12104326,12104329 and 62105228)Natural Science Foundation of Sichuan Province (2022NSFSC2000)+3 种基金the Opening Foundation of State Key Laboratory of Optical Technologies on Nano-Fabrication and MicroEngineeringfunding by Deutsche Forschungsgemeinschaft (DFG,German Research Foundation) under Germany’s Excellence Strategy–EXC 2089/1–390776260 (e-conversion)the context of the Bavarian Collaborative Research Project Solar Technologies Go Hybrid (SolTech)the support from the China Scholarship Council (CSC)
文摘Optical logic gates play important roles in all-optical logic circuits,which lie at the heart of the next-generation optical computing technology.However,the intrinsic contradiction between compactness and robustness hinders the development in this field.Here,we propose a simple design principle that can possess multiple-input-output states according to the incident circular polarization and direction based on the metasurface doublet,which enables controlled-NOT logic gates in infrared region.Therefore,the directional asymmetric electromagnetic transmission can be achieved.As a proof of concept,a spin-dependent Janus metasurface is designed and experimentally verified that four distinct images corresponding to four input states can be captured in the far-field.In addition,since the design method is derived from geometric optics,it can be easily applied to other spectra.We believe that the proposed metasurface doublet may empower many potential applications in chiral imaging,chiroptical spectroscopy and optical computing.