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Modeling the reactive sputter deposition of Ti-doped VO_x thin films
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作者 王涛 于贺 +4 位作者 顾德恩 郭睿 董翔 蒋亚东 胡锐麟 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第6期617-621,共5页
In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped... In this paper an original numerical model, based on the standard Berg model, is used to simulate the growth mechanism of Ti-doped VOx deposited with changing oxygen flow during reactive sputtering deposition. Ti-doped VOx thin films are deposited using a V target with Ti inserts. The effects of titanium inserts on the discharge voltage, deposition rate, and the ratio of V/Ti are investigated. By doping titanium in the vanadium target, the average sputtering yield decreases. In this case, the sputter erosion reduces, which is accompanied by a reduction in the deposition rate. The ratio between V content and Ti content in the film is measured using energy-dispersive x-ray spectroscopy (EDX). A decrease in the vanadium concentration with the increasing of the oxygen flow rate is detected using EDX. Results show a reasonable agreement between numerical and experimental data. 展开更多
关键词 h-doped VOX EDX
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