Near the metal-insulator transition, the Hall coefficient R of metal-insulator composites (M-I composite) can be up to 104 times larger than that in the pure metal called Giant Hall effect. Applying the physical model...Near the metal-insulator transition, the Hall coefficient R of metal-insulator composites (M-I composite) can be up to 104 times larger than that in the pure metal called Giant Hall effect. Applying the physical model for alloys with phase separation developed in [1] [2], we conclude that the Giant Hall effect is caused by an electron transfer away from the metallic phase to the insulating phase occupying surface states. These surface states are the reason for the granular structure typical for M-I composites. This electron transfer can be described by [1] [2], provided that long-range diffusion does not happen during film production (n is the electron density in the phase A. u<sub>A </sub>and u<sub>B</sub> are the volume fractions of the phase A (metallic phase) and phase B (insulator phase). β is a measure for the average potential difference between the phases A and B). A formula for calculation of R of composites is derived and applied to experimental data of granular Cu<sub>1-y</sub>(SiO<sub>2</sub>)<sub>y</sub> and Ni<sub>1-y</sub>(SiO<sub>2</sub>)<sub>y</sub> films.展开更多
We report the structural and electrical transport properties of Fe1-xCuxSe(x=0,0.02,0.05,0.10)single crystals grown by a chemical vapor transport method.Substituting Cu for Fe suppresses both the nematicity and superc...We report the structural and electrical transport properties of Fe1-xCuxSe(x=0,0.02,0.05,0.10)single crystals grown by a chemical vapor transport method.Substituting Cu for Fe suppresses both the nematicity and superconductivity of FeSe single crystal,and provokes a metal–insulator transition.Our Hall measurements show that the Cu substitution also changes an electron dominance at low temperature of un-doped Fe Se to a hole dominance of Cu-doped Fe1-xCuxSe at x=0.02 and 0.1,and reduces the sign-change temperature(TR)of the Hall coefficient(RH).展开更多
Normal,R0,and anomalous,RS,components of the Hall coefficient are determined from the results of experimental investigations of temperature dependences of the Hall coefficient,magnetic susceptibility,and specific elec...Normal,R0,and anomalous,RS,components of the Hall coefficient are determined from the results of experimental investigations of temperature dependences of the Hall coefficient,magnetic susceptibility,and specific electrical resistance for intermetallic Gd3In,Gd3In5 and GdIn3 compounds.Effective parameters of spin-orbital interactionλSO of intermetallic compounds are calculated from anomalous components RS of the Hall coefficient and specific electrical resistance.The results calculated for the band parameters and effective parameters of spin-orbital interactionλSO for Gd-In system intermetallides coincide by orders of magnitude with the results obtained from the optical spectra of pure REMs(rare-earth metals).展开更多
文摘Near the metal-insulator transition, the Hall coefficient R of metal-insulator composites (M-I composite) can be up to 104 times larger than that in the pure metal called Giant Hall effect. Applying the physical model for alloys with phase separation developed in [1] [2], we conclude that the Giant Hall effect is caused by an electron transfer away from the metallic phase to the insulating phase occupying surface states. These surface states are the reason for the granular structure typical for M-I composites. This electron transfer can be described by [1] [2], provided that long-range diffusion does not happen during film production (n is the electron density in the phase A. u<sub>A </sub>and u<sub>B</sub> are the volume fractions of the phase A (metallic phase) and phase B (insulator phase). β is a measure for the average potential difference between the phases A and B). A formula for calculation of R of composites is derived and applied to experimental data of granular Cu<sub>1-y</sub>(SiO<sub>2</sub>)<sub>y</sub> and Ni<sub>1-y</sub>(SiO<sub>2</sub>)<sub>y</sub> films.
基金Project supported by the National Key Research and Development of China(Grant No.2018YFA0704200)the National Natural Science Foundation of China(Grant No.11834016)the Strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB25000000)。
文摘We report the structural and electrical transport properties of Fe1-xCuxSe(x=0,0.02,0.05,0.10)single crystals grown by a chemical vapor transport method.Substituting Cu for Fe suppresses both the nematicity and superconductivity of FeSe single crystal,and provokes a metal–insulator transition.Our Hall measurements show that the Cu substitution also changes an electron dominance at low temperature of un-doped Fe Se to a hole dominance of Cu-doped Fe1-xCuxSe at x=0.02 and 0.1,and reduces the sign-change temperature(TR)of the Hall coefficient(RH).
文摘Normal,R0,and anomalous,RS,components of the Hall coefficient are determined from the results of experimental investigations of temperature dependences of the Hall coefficient,magnetic susceptibility,and specific electrical resistance for intermetallic Gd3In,Gd3In5 and GdIn3 compounds.Effective parameters of spin-orbital interactionλSO of intermetallic compounds are calculated from anomalous components RS of the Hall coefficient and specific electrical resistance.The results calculated for the band parameters and effective parameters of spin-orbital interactionλSO for Gd-In system intermetallides coincide by orders of magnitude with the results obtained from the optical spectra of pure REMs(rare-earth metals).
