FIB-SEM(Focused Ion Beam-Scanning Electron Microscope)双束系统是集聚焦离子束和扫描电子显微镜与一体的系统,其最大的优势是可以实现离子束切割或微加工的同时用电子束实时观察的功能。主要介绍FIB-SEM双束系统在PCB及IC载板缺陷...FIB-SEM(Focused Ion Beam-Scanning Electron Microscope)双束系统是集聚焦离子束和扫描电子显微镜与一体的系统,其最大的优势是可以实现离子束切割或微加工的同时用电子束实时观察的功能。主要介绍FIB-SEM双束系统在PCB及IC载板缺陷检测中的常见应用,如盲孔孔底分析、杂物失效分析和晶体结构分析。展开更多
An approximate three-dimensional closed-form Green's function with the type of exponential function is derived over a lossy multilayered substrate by means of the Fourier transforms and a novel complex fitting app...An approximate three-dimensional closed-form Green's function with the type of exponential function is derived over a lossy multilayered substrate by means of the Fourier transforms and a novel complex fitting approach. This Green's function is used to extract the capacitance matrix for an arbitrary three-dimensional arrangement of conductors located anywhere in the silicon IC substrate. Using this technique, the substrate loss in silicon integrated circuits can be analyzed. An example of inductor modeling is presented to show that the technique is quite effective.展开更多
针对下一代IC载板低表面粗糙度介电材料金属化应用,我们特别提出了全新的化学铜沉积速率控制配方,来改善现有的信赖性问题。此化学铜配方可在粗糙度低于0.1μm的基材上达到机械拉力值0.4 Kgf/cm以上。此外,此方法不会造成其他孔洞信赖...针对下一代IC载板低表面粗糙度介电材料金属化应用,我们特别提出了全新的化学铜沉积速率控制配方,来改善现有的信赖性问题。此化学铜配方可在粗糙度低于0.1μm的基材上达到机械拉力值0.4 Kgf/cm以上。此外,此方法不会造成其他孔洞信赖度测试(如QVP,quick via pull)出现金属种子层断裂的问题。化学铜在直径50μm,孔深约27μm的孔洞均厚能力也能达到90%以上。以上化学铜沉积速率控制配方的特性表现,确保在高阶IC载板的应用上可以达到良好的操作性与信赖度。展开更多
文摘FIB-SEM(Focused Ion Beam-Scanning Electron Microscope)双束系统是集聚焦离子束和扫描电子显微镜与一体的系统,其最大的优势是可以实现离子束切割或微加工的同时用电子束实时观察的功能。主要介绍FIB-SEM双束系统在PCB及IC载板缺陷检测中的常见应用,如盲孔孔底分析、杂物失效分析和晶体结构分析。
基金This project was supported by the Key Project of National Nature Science Foundation of China(69931020).
文摘An approximate three-dimensional closed-form Green's function with the type of exponential function is derived over a lossy multilayered substrate by means of the Fourier transforms and a novel complex fitting approach. This Green's function is used to extract the capacitance matrix for an arbitrary three-dimensional arrangement of conductors located anywhere in the silicon IC substrate. Using this technique, the substrate loss in silicon integrated circuits can be analyzed. An example of inductor modeling is presented to show that the technique is quite effective.
文摘针对下一代IC载板低表面粗糙度介电材料金属化应用,我们特别提出了全新的化学铜沉积速率控制配方,来改善现有的信赖性问题。此化学铜配方可在粗糙度低于0.1μm的基材上达到机械拉力值0.4 Kgf/cm以上。此外,此方法不会造成其他孔洞信赖度测试(如QVP,quick via pull)出现金属种子层断裂的问题。化学铜在直径50μm,孔深约27μm的孔洞均厚能力也能达到90%以上。以上化学铜沉积速率控制配方的特性表现,确保在高阶IC载板的应用上可以达到良好的操作性与信赖度。
