A 30GHz Wideband CMOS Injection-Locked Frequency Divider for 60GHz Transceiver

In this paper, a 30 GHz wide locking-range (26.2 GHz-35.7 GHz) direct injection-locked frequency divider (ILFD), which operating in the millimeter-wave (MMW) band, is presented. The locking range of the ILFD is extended by using differential injection topology. Besides, varactors are used in RLC resonant tank for extending the frequency tuning range. The post simulation results show that a wide locking-range of 9.5 GHz (30.7%) is achieved. When the VCO output frequency varies from 26.85 GHz to 34.42 GHz, the proposed ILFD can achieve divide-by-two correctly. Designed in 0.13 μm CMOS technology, the ILFD occupies a core area of 0.76 mm2 while drawing 7 mA of current from 2.5 V power supply.

基于注入锁定的RF低功耗正交本振信号产生电路

实现了一个基于注入锁定技术的射频低功耗正交本振信号产生电路。该电路由工作于两倍频频段的压控振荡器和两个注入锁定二分频器及缓冲器构成,可以为无线收发机提供正交本振信号。通过采用数字调谐技术,压控振荡器达到了很宽的调谐范围,而通过在注入锁定二分频器中加入与压控振荡器相同的变容管和电容阵列,保证了注入锁定二分频器在整个频带范围内都能保持锁定。该正交本振产生电路采用UMC 0.18μm CMOS工艺实现。测试结果表明,在1.9~2.3 GHz频率范围内,该电路能够提供正交本振信号。该电路采用1.8 V电源供电,消耗的电流为2.2 mA（不包含缓冲器的电流）,占用芯片面积为1.56 mm2。

应用于26 GHz-41 GHz频率综合器的高速可编程分频器的设计

毫米波频率综合器中的重要模块之一高速可编程多模分频器,它主要用于对VCO的输出信号进行分频从而获得稳定的本振信号,它的性能影响整个毫米波频率综合器性能。本文设计的一种高速、低功耗、分频比可变的分频器具有非常重要的意义[1]。根据26 GHz-41 GHz硅基锁相环频率综合器的系统指标,本文基于TSMC 45nm CMOS工艺,设计实现了一种高速可编程分频器。本文采用注入锁定结构分频结构实现高速预分频,该结构可以实现在0 d Bm的输入功率下实现25 GHz-48 GHz的分频范围、最低功耗为:2.6 m W。基于脉冲吞咽计数器的可编程分频器由8/9双模分频器和可编程脉冲吞咽计数器组成。其中8/9双模分频器由同步4/5分频器和异步二分频构成,工作频率范围10 GHz-27 GHz,最低输入幅度为:300 m V,最低功耗为:1.6 m V。可编程吞咽计数器采用改进型带置数功能的TSPC D触发器,该可编程分频器的最大工作范围:25 GHz;最小功耗为:363μW。本文设计的高速可编程多模分频器,可以实现32-2 062的分频比;当工作于28 GHz时,相位噪声小于-159 dBc/Hz。动态功耗为5.2 m W。

A Ka-band wide locking range frequency divider with high injection sensitivity

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.

Low-power wide-locking-range injection-locked frequency divider for OFDM UWB systems

This paper describes a divide-by-two injection-locked frequency divider （ILFD） for frequency synthesizers as used in multiband orthogonal frequency division multiplexing （OFDM） ultra-wideband （UWB） systems. By means of dual-injection technique and other conventional tuning techniques, such as DCCA and varactor tuning, the divider demonstrates a wide locking range while consuming much less power. The chip was fabricated in the Jazz 0.18μm RF CMOS process. The measurement results show that the divider achieves a locking range of 4.85 GHz （6.23 to 11.08 GHz） at an input power of 8 dBm. The core circuit without the test buffer consumes only 3.7 mA from a 1.8 V power supply and has a die area of 0.38×0.28 mm^2. The wide locking range combined with low power consumption makes the ILFD suitable for its application in UWB systems.

A 31–45.5 GHz injection-locked frequency divider in 90-nm CMOS technology

We present a 31–45.5 GHz injection-locked frequency divider(ILFD) implemented in a standard 90-nm CMOS process. To reduce parasitic capacitance and increase the operating frequency, an NMOS-only cross-coupled pair is adopted to provide negative resistance. Acting as an adjustable resistor, an NMOS transistor with a tunable gate bias voltage is connected to the differential output terminals for locking range extension. Measurements show that the designed ILFD can be fully functional in a wide locking range and provides a good figure-of-merit. Under a 1 V tunable bias voltage, the self-resonant frequency of the divider is 19.11 GHz and the maximum locking range is 37.7% at 38.5 GHz with an input power of 0 d Bm. The power consumption is 2.88 m W under a supply voltage of 1.2 V. The size of the chip including the pads is 0.62 mm×0.42 mm.

一种应用于超高速ADC中6G/8GHz的高精度正交时钟产生电路

正交时钟被广泛地用在正交频分复用（OFDM）通信系统的时间交织模拟数字转换器（ADC）中.正交信号的相位偏差和时钟抖动对整个系统都有着重要的影响.针对时间交织ADC的应用需求,提出一种宽带的输出相位可调的正交注入锁定分频器,通过调节注入信号和耦合信号的能量来改善因器件失配和工艺偏差等造成的正交信号的相位误差.在此基础上设计了一个基于LC压控振荡器的电荷泵型锁相环.该锁相环采用TSMC65nm工艺设计,正交时钟的频率输出范围是5.8-6.5GHz和7.1-8.3GHz,正交相位的平均误差小于0.26°,满足系统设计的预设指标.