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纳米TiO_(2)对NH_(3)-H_(2)O-LiBr工质降膜吸收性能的影响
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作者 李彦军 金正浩 李舒宏 《制冷技术》 2024年第1期16-23,共8页
为了探讨纳米TiO_(2)对三元NH_(3)-H_(2)O-LiBr工质降膜吸收的影响,本文利用数值分析建立了三元工作流体薄膜吸收的连续方程、能量方程和组分质量平衡方程,采用Matlab软件进行编程和计算纳米流体的降膜吸收性能,将其与实验数据进行对比... 为了探讨纳米TiO_(2)对三元NH_(3)-H_(2)O-LiBr工质降膜吸收的影响,本文利用数值分析建立了三元工作流体薄膜吸收的连续方程、能量方程和组分质量平衡方程,采用Matlab软件进行编程和计算纳米流体的降膜吸收性能,将其与实验数据进行对比验证,并进一步分析了纳米TiO_(2)质量分数、初始氨浓度、初始温度、冷却水进口温度、吸收压力和下降薄膜管长度对薄膜吸收性能的影响。研究表明:添加纳米TiO_(2)可以增强降膜吸收的传质速率,主要原因为液膜中氨的扩散系数增加。当纳米TiO_(2)质量分数从0%增加到0.1%、0.3%和0.5%时,扩散系数分别增加了3.44倍、6.42倍和11.76倍。此外,增加初始氨浓度、降低初始温度、提高冷却水进口温度或降低吸收压力都可以提高最终溶液的饱和度。 展开更多
关键词 降膜 吸收 纳米Tio_(2) NH_(3)-H_(2)o-LiBr 模拟研究
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Effects of dopant content on optical and electrical properties of In_2O_3: W transparent conductive films 被引量:3
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作者 Zhang, Yuanpeng Li, Yuan +3 位作者 Li, Chunzhi Wang, Wenwen Zhang, Junying Wang, Rongming 《Rare Metals》 SCIE EI CAS CSCD 2012年第2期168-171,共4页
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigate... The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%. 展开更多
关键词 In 2 o 3 : w thin film doping content DC magnetron sputtering optical and electrical properties
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In_2O_3:W薄膜的制备及光电性能研究 被引量:5
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作者 李渊 王文文 张俊英 《功能材料》 EI CAS CSCD 北大核心 2011年第8期1457-1460,共4页
采用直流磁控溅射法制备了掺钨氧化铟(In2O3:W,IWO)薄膜,研究了制备工艺对薄膜表面形貌和光电性能的影响。结果表明薄膜的表面形貌与其光电性能有着紧密联系。氧分压显著影响薄膜的表面形貌进而对薄膜的光电性能产生影响,同时溅射时间... 采用直流磁控溅射法制备了掺钨氧化铟(In2O3:W,IWO)薄膜,研究了制备工艺对薄膜表面形貌和光电性能的影响。结果表明薄膜的表面形貌与其光电性能有着紧密联系。氧分压显著影响薄膜的表面形貌进而对薄膜的光电性能产生影响,同时溅射时间的变化也显著影响薄膜的光电性能:随着氧分压以及溅射时间的升高,薄膜的电阻率均呈现先减小后增大的变化规律,在氧分压为2.4×10-1Pa条件下,制备样品的表面晶粒排布最细密,其电阻率达到6.3×10-4Ω.cm,载流子浓度为2.9×1020cm-3,载流子迁移率为34cm2/(V.s),可见光平均透射率约为85%,近红外光平均透射率>80%。 展开更多
关键词 in2o3w薄膜 直流磁控溅射 氧分压 溅射时间 表面形貌 光电性能
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Investigation of Sprayed Lu2O3 Thin Films Using XPS
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作者 Towhid Adnan Chowdhury 《Advances in Materials Physics and Chemistry》 2023年第11期197-205,共9页
Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried ... Spray pyrolysis method was used to deposit Lutetium Oxide (Lu<sub>2</sub>O<sub>3</sub>) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu<sub>2</sub>O<sub>3</sub> thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers. 展开更多
关键词 Lu2o3 Depth Profiling X-Ray Photoelectron Spectroscopy Thin films
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XPS Depth Profile Study of Sprayed Ga2O3 Thin Films
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作者 Towhid Adnan Chowdhury 《Engineering(科研)》 2023年第8期459-466,共8页
Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C fo... Ga<sub>2</sub>O<sub>3</sub> thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga<sub>2</sub>O<sub>3</sub> thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric. 展开更多
关键词 Ga2o3 Thin films x-Ray Photoelectron Spectroscopy Depth Profiling
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Growth of β-Ga_2O_3 Films on Sapphire by Hydride Vapor Phase Epitaxy 被引量:3
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作者 Ze-Ning XIONG Xiang-Qian XIU +7 位作者 Yue-Wen LI Xue-Mei HUA Zi-Li XIE Peng CHEN Bin LIU Ping HAN Rong ZHANG You-Dou ZHENG 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期141-143,共3页
Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig... Two-inch Ga_2O_3 films with(ˉ201)-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V. 展开更多
关键词 Growth of Ga2o3 films on Sapphire by Hydride Vapor Phase Epitaxy XRD
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Synthesis of free-standing Ga_2O_3 films for flexible devices by water etching of Sr_3Al_2O_6 sacrificial layers 被引量:1
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作者 Xia Wang Zhen-Ping Wu +5 位作者 Wei Cui Yu-Song Zhi Zhi-Peng Li Pei-Gang Li Dao-You Guo Wei-Hua Tang 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第1期166-170,共5页
Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_... Flexible electronic devices have attracted much attention due to their practical and commercial value. Integration of thin films with soft substrate is an effective way to fabricate flexible electronic devices. Ga_2O_3 thin films deposited directly on soft substrates would be amorphous mostly. However, the thickness of the thin film obtained by mechanical exfoliation method is difficult to control and the edge of the film is fragile and easy to be damaged. In this work, we fabricated free-standing Ga_2O_3 thin films using the water-soluble perovskite Sr_3Al_2O_6 as a sacrificial buffer layer. The obtained Ga_2O_3 thin films were polycrystalline. The thickness and dimension of the films were controllable. A flexible Ga_2O_3solar-blind UV photodetector was fabricated by transferring the free-standing Ga_2O_3 film on a flexible polyethylene terephthalate substrate. The results displayed that the photoelectric performances of the flexible Ga_2O_3 photodetector were not sensitive to bending of the device. The free-standing Ga_2O_3 thin films synthesized through the method described here can be transferred to any substrates or integrated with other thin films to fabricate electronic devices. 展开更多
关键词 FREE-STANDING GA2o3 thin film CRYSTALLINE Sr3Al2o6 FLEXIBLE PHoToDETECToR
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Structure and Waveguide Properties of Sol-Gel Derived Gd_2O_3 Films 被引量:1
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作者 郭海 肖腾 +4 位作者 杨旭东 张慰萍 楼立人 尹民 Jacques Mugnier 《Journal of Rare Earths》 SCIE EI CAS CSCD 2004年第1期27-30,共4页
Pure and rare earth doped gadolinium oxide (Gd 2O 3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd 2O 3 films annealed at different temperature was investigated ... Pure and rare earth doped gadolinium oxide (Gd 2O 3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd 2O 3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy. Oriented growth of (400) face of Gd 2O 3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-lines spectroscopy. The laser beam (λ=632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu 3+ at 400 ℃. 展开更多
关键词 oPTICS waveguide film SoL-GEL gadolinium oxide (Gd2o3) rare earths
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Strongly enhanced flux pinning in the YBa_2Cu_3O_(7-X) films with the co-doping of Ba TiO_3 nanorod and Y_2O_3 nanoparticles at 65 K 被引量:1
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作者 王洪艳 丁发柱 +1 位作者 古宏伟 张腾 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期497-501,共5页
YBa2Cu3O7-x(YBCO) films with co-doping BaTiO3(BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates(TFA-MOD). The properties of the BTO/Y2O3co-doped YBCO films with diffe... YBa2Cu3O7-x(YBCO) films with co-doping BaTiO3(BTO) and Y2O3 nanostructures were prepared by metal organic deposition using trifluoroacetates(TFA-MOD). The properties of the BTO/Y2O3co-doped YBCO films with different excess yttrium have been systematically studied by x-ray diffraction(XRD), Raman spectra, and scanning electron microscope(SEM). The optimized content of yttrium excess in the BTO/Y2O3co-doped YBCO films is 10 mol.%, and the critical current density is as high as - 17 mA/cm^2(self-field, 65 K) by the magnetic signal. In addition, the Y2Cu2O5 was formed when the content of yttrium excess increases to 24 mol.%, which may result in the deterioration of the superconducting properties and the microstructure. The unique combination of the different types of nanostructures of BTO and Y2O3 in the doped YBCO films, compared with the pure YBCO films and BTO doped YBCO films, enhances the critical current density(JC) not only at the self-magnetic field, but also in the applied magnetic field. 展开更多
关键词 YBa2Cu3o7-x(YBCo film flux pinning BaTio3(BTo and Y2o3 nanostructures metal organic deposition using trifluoroacetates(TFA-MoD
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Al_2O_3的W金属化及其与Nb的Pd钎焊研究 被引量:8
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作者 刘桂武 王志刚 +2 位作者 乔冠军 王红洁 王继平 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2009年第8期1394-1397,共4页
在考察Al2O3(95%Al2O3瓷和Al2O3单晶)的W-Y2O3金属化工艺的基础上,制备Al2O3单晶/Pd/Nb的高温钎焊接头,分析Al2O3的W-Y2O3金属化和Al2O3/Nb的Pd钎焊机制。结果表明:在Al2O3基体和金属化层界面附近存在Y元素的偏聚行为,同时伴随着Al含量... 在考察Al2O3(95%Al2O3瓷和Al2O3单晶)的W-Y2O3金属化工艺的基础上,制备Al2O3单晶/Pd/Nb的高温钎焊接头,分析Al2O3的W-Y2O3金属化和Al2O3/Nb的Pd钎焊机制。结果表明:在Al2O3基体和金属化层界面附近存在Y元素的偏聚行为,同时伴随着Al含量的下降。这是由于金属化过程中陶瓷/金属化层界面新生固相产物扩散的结果,且其扩散主要为朝金属化层方向。高温钎焊过程中,金属化层中的W元素和金属Nb扩散进入几乎整个Pd焊料层,这使得在Nb/Pd界面附近及焊料层内形成脆性固溶体或金属间化合物,从而导致微裂纹产生。 展开更多
关键词 AL2o3陶瓷 Al2o3单晶 w金属化 钎焊 扩散
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Ti/Cu/Ti复合中间层扩散连接TiC-Al_2O_3/W18Cr4V接头组织分析 被引量:7
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作者 王娟 李亚江 +1 位作者 马海军 刘鹏 《焊接学报》 EI CAS CSCD 北大核心 2006年第9期9-12,共4页
通过添加Ti/Cu/Ti复合中间层,控制加热温度1 130℃,保温1 h,连接压力15 MPa,实现陶瓷基复合材料TiC-Al2O3与高速钢W18Cr4V的真空扩散连接,TiC-Al2O3/W18Cr4V接头抗剪强度达103 MPa。采用扫描电镜、X射线衍射、电子探针等测试方法分析了T... 通过添加Ti/Cu/Ti复合中间层,控制加热温度1 130℃,保温1 h,连接压力15 MPa,实现陶瓷基复合材料TiC-Al2O3与高速钢W18Cr4V的真空扩散连接,TiC-Al2O3/W18Cr4V接头抗剪强度达103 MPa。采用扫描电镜、X射线衍射、电子探针等测试方法分析了TiC-Al2O3/W18Cr4V扩散连接接头的微观组织结构和显微硬度分布。结果表明,Ti/Cu/Ti复合中间层与两侧基体TiC-Al2O3和W18Cr4V发生扩散结合,形成均匀致密、宽度为90μm的扩散过渡区,过渡区显微硬度从3 400 HM逐渐降低到1 000 HM,形成的相结构主要有Ti3Al,CuTi2,Cu和TiC。 展开更多
关键词 TiC-Al2o3 Ti/Cu/Ti复合中间层 TiC-Al2o3/w18Cr4V接头 扩散连接 组织结构
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磷对Ni(Co)Mo(W)/Al_2O_3加氢处理催化剂的影响研究进展 被引量:13
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作者 周同娜 尹海亮 +2 位作者 韩姝娜 柳云骐 刘晨光 《化工进展》 EI CAS CSCD 北大核心 2008年第10期1581-1587,共7页
Ni(Co)Mo(W)/Al2O3催化剂是工业中最常用的加氢处理催化剂。磷作为Ni(Co)Mo(W)/Al2O3加氢处理催化剂中较为常用的添加剂,用于改善催化剂的物理化学性质。本文从磷对Ni(Co)Mo(W)/Al2O3加氢催化剂孔结构、酸性、活性组分分散度等理化性能... Ni(Co)Mo(W)/Al2O3催化剂是工业中最常用的加氢处理催化剂。磷作为Ni(Co)Mo(W)/Al2O3加氢处理催化剂中较为常用的添加剂,用于改善催化剂的物理化学性质。本文从磷对Ni(Co)Mo(W)/Al2O3加氢催化剂孔结构、酸性、活性组分分散度等理化性能以及磷对加氢脱硫(HDS)和加氢脱氮(HDN)催化性能两个方面的影响对文献研究结果进行了综述,对磷添加剂的研究结果、存在的分歧以及研究机会进行了分析讨论。 展开更多
关键词 Ni(Co)Mo(w)/Al2o3催化剂 加氢脱硫 加氢脱氮
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[CH_3NH_3][NH_3(CH_2)_6NH_3]H_3[P_2Mo_2W_(16)O_(62)]·H_2O的水热合成与表征 被引量:4
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作者 刘宗瑞 王力 +5 位作者 陈保国 许林 王恩波 邢彦 贾恒庆 林永华 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2003年第5期772-775,共4页
首次合成了[CH_3NH_3][NH_3(CH_2)_6NH_3]H_3[P_2Mo_2W_(16)O_(62)]·H_2O,通过元素分析、红外光谱和X射线单晶衍射对合成产物进行了表征,并用TGA-DSC研究了化合物的热稳定性.晶体属单斜晶系,P2_1/m空间群,a=1.259 6(3)nm,b=1.871 5... 首次合成了[CH_3NH_3][NH_3(CH_2)_6NH_3]H_3[P_2Mo_2W_(16)O_(62)]·H_2O,通过元素分析、红外光谱和X射线单晶衍射对合成产物进行了表征,并用TGA-DSC研究了化合物的热稳定性.晶体属单斜晶系,P2_1/m空间群,a=1.259 6(3)nm,b=1.871 5(4)nm,c=1.981 6(4)nm,α=γ=90°,β=90.16(3)°,V=4.671(2)nm^3,Z=2,M_r=4 358.66,D_c=3.100 g·cm^(-3),μ=19.978 mm^(-1),F(000)=3 792,R=0.083 5,R_w=0.202 6.结果表明,在晶体结构内形成了0.736 4 nm×0.835 4 nm的微孔。 展开更多
关键词 [CH3NH3][NH3(CH2)6NH3]H3[P2Mo2w16o62]·H2o 水热合成 表征 晶体结构 钨钼磷酸盐 有机胺 微孔金属氧簇合物
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真空热压烧结W(50)/Cu-Al_2O_3的热压缩变形行为 被引量:6
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作者 张晓伟 田保红 +3 位作者 张毅 刘勇 贾淑果 任凤章 《材料热处理学报》 EI CAS CSCD 北大核心 2011年第8期41-46,共6页
采用真空热压烧结法制备了纳米Al2O3弥散强化铜为基体,W颗粒为增强相的W(50)/Cu-Al2O3新型复合材料。在Gleeble-1500D热模拟机上对真空热压烧结W(50)/Cu-Al2 O3复合材料进行等温热压缩实验,研究了在变形温度为650~950℃;变形速率为0.01... 采用真空热压烧结法制备了纳米Al2O3弥散强化铜为基体,W颗粒为增强相的W(50)/Cu-Al2O3新型复合材料。在Gleeble-1500D热模拟机上对真空热压烧结W(50)/Cu-Al2 O3复合材料进行等温热压缩实验,研究了在变形温度为650~950℃;变形速率为0.01~5 s-1;最大真应变为0.7条件下的流变应力行为。结果表明:在实验条件下,复合材料W(50)/Cu-Al2O3存在明显的动态再结晶特征,即变形初期,流变应力随着应变量的增大而迅速增大,达到峰值之后流变应力逐渐趋于平稳,不随应变的增加而明显变化。变形温度和变形速率对流变应力影响显著,随着温度的升高和应变速率的减小,峰值应力逐渐减小,并且在晶界交叉处出现再结晶晶粒,并逐渐增多。复合材料的主要软化机制为动态再结晶。建立了复合材料高温变形时的流变应力本构方程,并确定了热变形激活能Q为176.05 kJ/mol。 展开更多
关键词 w(50)/Cu-Al2o3复合材料 热压缩变形 动态再结晶 本构方程
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Interfacial Electronic Structure of Thin Cu Films Grown on Ar^+-ion Sputter-cleaned α-Al_2O_3 Substrates
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作者 Christina Scheu, Min Gao and Manfred RuhleMax-Planck-Institut fur Metallforschung, Seestr. 92, 70174 Stuttgart, Germany 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2002年第2期117-120,共4页
The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared ... The bonding and electronic structure of Cu/(0001)Al2O3 and Cu/(1120)Al2O3 interfaces has been studied experimentally using spatially-resolved transmission electron energy loss spectroscopy. The specimen were prepared by depositing Cu on single-crystal α-AI2O3 substrates, which have been Ar+-ion sputter-cleaned prior to the growth of Cu. For both orientations of the α-Al2O3 substrate, atomically abrupt interfaces formed as determined by high-resolution transmission electron microscopy. The investigations of the interfacial Cu-L2,3, Al-L2,3 and 0-K energy loss near-edge structures, which are proportional to the site- and angular-momentum-projected unoccupied density of states above the Fermi level, indicate the existence of metallic Cu-AI bonds at the Cu/AI2O3 interface independent of the substrate orientation. 展开更多
关键词 Electronic structure Cu film Ion sputtering Α-AL2o3
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The Film-forming Behavior on the Interface between Air and Hydrosol of Fe_2O_3 Nanoparticles
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作者 曹立新 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2009年第4期525-527,共3页
The film forming behavior on the interface between air and hydrosol of Fe2O3 nanoparticles was investigated by the surface pressure-time isotherms, the surface pressure-trough area isotherms, Brewster angle microscopy... The film forming behavior on the interface between air and hydrosol of Fe2O3 nanoparticles was investigated by the surface pressure-time isotherms, the surface pressure-trough area isotherms, Brewster angle microscopy and transmission electron microscopy. It is found that the freshly prepared hydrosol of Fe2O3 nanoparticles is not stable. The surface pressure increases with the aging time and finally approaches a constant, and the smaller the concentration is, the smaller the surface pressure is stabilized at and the shorter the time the hydrosol reaching stable needs. The surface pressure also increases with compression until collapsed, and the longer the hydrosol is aged, the higher the collapsing pressure is. A uniform and compact film composed of nanoparticles with an average diameter of about 2-3 nm on the air-hydrosol interface is observed by Brewster angle microscope and transmission electron microscope. 展开更多
关键词 film INTERFACE air and hydrosol Fe2o3 nanoparticles
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The microwave response of MgB2 /Al2O3 superconducting thin films
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作者 史力斌 王云飞 +8 位作者 柯于洋 张国华 罗胜 张雪强 李春光 黎红 何豫生 于增强 王福仁 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第3期799-804,共6页
Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The ... Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes. 展开更多
关键词 MgB2/Al2o3 thin films surface resistance penetration depth grain-size model
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Al_2O_3/Cr_3C_2/(W,Ti)C陶瓷抗弯强度的研究 被引量:3
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作者 孙德明 刘立红 +3 位作者 许崇海 刘玉婷 鹿晓阳 赵国群 《机械工程材料》 CAS CSCD 北大核心 2005年第8期43-45,共3页
热压烧结制备了Al2O3/Cr3C2/(W,Ti)C复合陶瓷材料,对其抗弯强度及组织形貌进行了研究,分析了Cr3C2与(W,Ti)C对抗弯强度的影响。结果表明:添加(W,Ti)C与Cr3C2有利于阻止晶界迁移,延缓晶粒长大,提高材料强度,但每一相的添加量以10%内为宜... 热压烧结制备了Al2O3/Cr3C2/(W,Ti)C复合陶瓷材料,对其抗弯强度及组织形貌进行了研究,分析了Cr3C2与(W,Ti)C对抗弯强度的影响。结果表明:添加(W,Ti)C与Cr3C2有利于阻止晶界迁移,延缓晶粒长大,提高材料强度,但每一相的添加量以10%内为宜,两者添加总量在20%左右时Al2O3/Cr3C2/(W,Ti)C复合材料抗弯强度较佳。铬、钨、钛离子在Al2O3基体晶粒中的固溶起强化作用,网状结构是降低材料抗弯强度的重要原因。 展开更多
关键词 Cr3 C2 (w Ti)C AL2o3陶瓷 抗弯强度
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Al_2O_3/(W,Ti)C纳米复合陶瓷材料的显微结构 被引量:5
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作者 周咏辉 艾兴 +2 位作者 赵军 杨发展 薛强 《人工晶体学报》 EI CAS CSCD 北大核心 2008年第4期809-813,共5页
使用纳米、亚微米级的α-Al2O3粉体和微米级的(W,Ti)C粉体为原料,采用热压烧结工艺制备了Al2O3/(W,Ti)C纳米复合陶瓷材料。对热压后材料的硬度、断裂韧性和抗弯强度进行了测试和分析,利用透射电镜、扫描电镜及X衍射仪对Al2O3/(W,Ti)C纳... 使用纳米、亚微米级的α-Al2O3粉体和微米级的(W,Ti)C粉体为原料,采用热压烧结工艺制备了Al2O3/(W,Ti)C纳米复合陶瓷材料。对热压后材料的硬度、断裂韧性和抗弯强度进行了测试和分析,利用透射电镜、扫描电镜及X衍射仪对Al2O3/(W,Ti)C纳米复合陶瓷材料的微观组织和结构进行了研究。结果表明,增强相(W,Ti)C与基体Al2O3互相穿插、包裹,界面结合良好,形成了典型的骨架结构;球磨后的(W,Ti)C颗粒粒度分布广泛,热压烧结后与基体材料形成了内晶/晶间型结构;断裂模式的改变、内部残余应力场、位错机制、裂纹分叉和偏转等促进了材料强度和韧性的提高。 展开更多
关键词 AL2o3 (w.Ti)C 纳米复合陶瓷材料 显微结构
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真空热压烧结W(50)/Cu-Al_2O_3复合材料的性能研究 被引量:4
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作者 张晓伟 田保红 +1 位作者 赵瑞龙 刘勇 《热加工工艺》 CSCD 北大核心 2010年第20期63-65,共3页
采用真空热压烧结工艺制备W(50)/Cu-Al2O3复合材料,观察了其显微组织,测试了其致密度、硬度、抗弯强度和导电率。结果表明:W(50)/Cu-Al2O3复合材料组织致密;致密度和硬度优于Cu-50%W,致密度可达99.8%,显微硬度达135 HV。而导电率为46%IA... 采用真空热压烧结工艺制备W(50)/Cu-Al2O3复合材料,观察了其显微组织,测试了其致密度、硬度、抗弯强度和导电率。结果表明:W(50)/Cu-Al2O3复合材料组织致密;致密度和硬度优于Cu-50%W,致密度可达99.8%,显微硬度达135 HV。而导电率为46%IACS,略低于W-50%Cu复合材料。抗弯强度为291.3 MPa,弥散铜钨合金室温弯曲断裂主要以弥散Cu相的撕裂为主,伴随有W-Cu界面的分离和部分W晶粒的解理断裂。 展开更多
关键词 热压烧结 w(50)/Cu-Al2o3 致密度 性能 断裂机理
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