In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are of...In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.展开更多
本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外...本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。展开更多
利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影...利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影响In液滴成核率来控制液滴的密度,即随着沉积速率的增大,In原子在衬底表面的成核率增加,InAs量子点密度增加,实验符合生长动力学经典成核理论.(2)沉积量的改变主要影响液滴的熟化过程,即随着沉积量的增大,可参与生长的活跃的In原子增加,促进了液滴熟化,使得扩散坍塌的原子数量增加,导致在InAs纳米结构中出现多量子点现象.展开更多
In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2....In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.展开更多
报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ...报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.展开更多
基金Supported by the National Natural Science Foundation of China(NSFC)(61904183,61974152,62104237,62004205)the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y202057)+1 种基金Shanghai Science and Technology Committee Rising-Star Program(20QA1410500)Shanghai Sail Plans(21YF1455000)。
文摘In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and resonators.In the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and detectors.In this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated detector.The GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal loss.We conducted a simulation to analyze the photoelectric characteristics of the device.Additionally,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb waveguide.Optimal thicknesses and lengths for the absorption lay⁃er are determined.When the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.
文摘本文报道了1280×1024元InAs/GaSb II类超晶格中/中波双色红外焦平面阵列探测器的研究结果。探测器采用PN-NP叠层双色外延结构,信号提取采用叠层双色结构和顺序读出方式。运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为中波1:6 ML InAs/7 ML GaSb和中波2:9 ML InAs/7 ML GaSb。焦平面阵列像元中心距为12μm。在80 K时测试,器件双波段的工作谱段为中波1:3~4μm,中波2:3.8~5.2μm。中波1器件平均峰值探测率达到6.32×10^(11) cm·Hz^(1/2)W^(-1),中波2器件平均峰值探测率达到2.84×10^(11) cm·Hz^(1/2)W^(-1)。红外焦平面偏压调节成像测试得到清晰的双波段成像。本文是国内首次报道1280×1024规模InAs/GaSb II类超晶格中/中波双色红外焦平面探测器。
文摘利用液滴外延法在GaAs(001)衬底表面制备InAs量子点,通过控制变量分别研究沉积速率、沉积量对In液滴在GaAs表面生长过程中的影响.使用原子力显微镜(Atomic Force Microscope,AFM)表征I⁃nAs纳米结构形貌,得出结论:(1)沉积速率主要通过影响In液滴成核率来控制液滴的密度,即随着沉积速率的增大,In原子在衬底表面的成核率增加,InAs量子点密度增加,实验符合生长动力学经典成核理论.(2)沉积量的改变主要影响液滴的熟化过程,即随着沉积量的增大,可参与生长的活跃的In原子增加,促进了液滴熟化,使得扩散坍塌的原子数量增加,导致在InAs纳米结构中出现多量子点现象.
基金Project supported by the National Basic Research Program of China(Grant Nos.2016YFB0402403 and 2013CB932904)the National Natural Science Foundation of China(Grant Nos.61290303 and 61306013)China Postdoctoral Science Foundation(Grant No.2016M601100)
文摘In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21Sb0.79 bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10^-5）/cm^2at 500 mV,thereby providing a detectivity of 1.55×10^11cm·Hz^1/2/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10^-3A/cm^2at-300 mV,thereby resulting in a detectivity of 2.71×10^10cm·Hz^1/2/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.
文摘报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10^(10) cmHz^(1/2)W^(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz^(1/2)W^(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.
