光纤通信技术的发展对光波导调制器提出了更高的要求,L iN bO3(LN)电光调制器用于相干光通信系统的外调制器及高速光开关,因此引起人们的特别重视。在介绍回顾LN电光调制器发展历程的基础上介绍了它的最新进展情况,对具有发展潜力的脊...光纤通信技术的发展对光波导调制器提出了更高的要求,L iN bO3(LN)电光调制器用于相干光通信系统的外调制器及高速光开关,因此引起人们的特别重视。在介绍回顾LN电光调制器发展历程的基础上介绍了它的最新进展情况,对具有发展潜力的脊型行波型电光调制器利用简化模型进行了优化,取得了较为理想的结果。展开更多
A strain-introduced Mach-Zehnder interferometer (MZI) interleaver on lithium niobate (LiNbO3 ) is proposed. The structure of the strain-introduced waveguide is designed in detail, and is produced by depositing a SiO2 ...A strain-introduced Mach-Zehnder interferometer (MZI) interleaver on lithium niobate (LiNbO3 ) is proposed. The structure of the strain-introduced waveguide is designed in detail, and is produced by depositing a SiO2 film on the annealed proton-exchanged LiNbO3 waveguide. Considering the sensitivities of the edge strain to the deposition temperature and the thickness of the SiO2 film, an optimum design of 50 GHz interleaver on this structure is given through analyzing the effective index changes for E x pq mode by finite difference method (FDM). The length of the bending waveguide in this interleaver is just two thirds of that in the conventional interleaver due to the high refractive index difference.展开更多
基金supported by the National Natural Science Foundation of China (No.61177054)
文摘A strain-introduced Mach-Zehnder interferometer (MZI) interleaver on lithium niobate (LiNbO3 ) is proposed. The structure of the strain-introduced waveguide is designed in detail, and is produced by depositing a SiO2 film on the annealed proton-exchanged LiNbO3 waveguide. Considering the sensitivities of the edge strain to the deposition temperature and the thickness of the SiO2 film, an optimum design of 50 GHz interleaver on this structure is given through analyzing the effective index changes for E x pq mode by finite difference method (FDM). The length of the bending waveguide in this interleaver is just two thirds of that in the conventional interleaver due to the high refractive index difference.
