Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

Enhancing the Performance of Perovskite Light-Emitting Diodes via Synergistic Effect of Defect Passivation and Dielectric Screening

Metal halide perovskites,particularly the quasi-two-dimensional perovskite subclass,have exhibited considerable potential for next-generation electroluminescent materials for lighting and display.Nevertheless,the presence of defects within these perovskites has a substantial influence on the emission efficiency and durability of the devices.In this study,we revealed a synergistic passivation mechanism on perovskite films by using a dual-functional compound of potassium bromide.The dual functional potassium bromide on the one hand can passivate the defects of halide vacancies with bromine anions and,on the other hand,can screen the charged defects at the grain boundaries with potassium cations.This approach effectively reduces the probability of carriers quenching resulting from charged defects capture and consequently enhances the radiative recombination efficiency of perovskite thin films,leading to a significant enhancement of photoluminescence quantum yield to near-unity values(95%).Meanwhile,the potassium bromide treatment promoted the growth of homogeneous and smooth film,facilitating the charge carrier injection in the devices.Consequently,the perovskite light-emitting diodes based on this strategy achieve a maximum external quantum efficiency of~21%and maximum luminance of~60,000 cd m^(-2).This work provides a deeper insight into the passivation mechanism of ionic compound additives in perovskite with the solution method.

Physico−mathematical model of the voltage−current characteristics of light-emitting diodes with quantum wells based on the Sah−Noyce−Shockley recombination mechanism

Herein,a physical and mathematical model of the voltage−current characteristics of a p−n heterostructure with quantum wells(QWs)is prepared using the Sah−Noyce−Shockley(SNS)recombination mechanism to show the SNS recombination rate of the correction function of the distribution of QWs in the space charge region of diode configuration.A comparison of the model voltage−current characteristics(VCCs)with the experimental ones reveals their adequacy.The technological parameters of the structure of the VCC model are determined experimentally using a nondestructive capacitive approach for determining the impurity distribution profile in the active region of the diode structure with a profile depth resolution of up to 10Å.The correction function in the expression of the recombination rate shows the possibility of determining the derivative of the VCCs of structures with QWs with a nonideality factor of up to 4.

Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes

Ag-In-Ga-S(AIGS)quantum dots(QDs)have recently attracted great interests due to the outstanding optical properties and eco-friendly components,which are considered as an alternative replacement for toxic Pb-and Cd-based QDs.However,enormous attention has been paid to how to narrow their broadband spectra,ignoring the application advantages of the broadband emission.In this work,the AIGS QDs with controllable broad green-red dual-emission are first reported,which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals.Resultantly,the AIGS QDs exhibit broad dual-emission at green-and red-band evidenced by photoluminescence(PL)spectra,and the PL relative intensity and peak position can be finely adjusted.Furthermore,the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra.Accordingly,the AIGS QDs(the size consists of 17 nm and 3.7 nm)with 530 nm and 630 nm emission could successfully be synthesized at 220°C.By combining the blue light-emitting diode(LED)chips and dual-emission AIGS QDs,the constructed white light-emitting devices(WLEDs)exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage(CIE)chromaticity coordinates of(0.33,0.31),a correlated color temperature(CCT)of 5425 K,color rendering index(CRI)of 90,and luminous efficacy of radiation(LER)of 129 lm/W,which indicates that the AIGS QDs have huge potential for lighting applications.

Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer

We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

The performance of inverted quantum-dot light-emitting diodes(QLEDs)based on solution-processed hole transport layers(HTLs)has been limited by the solvent-induced damage to the quantum dot(QD)layer during the spin-coating of the HTL.The lack of compatibility between the HTL’s solvent and the QD layer results in an uneven surface,which negatively impacts the overall device performance.In this work,we develop a novel method to solve this problem by modifying the QD film with 1,8-diaminooctane to improve the resistance of the QD layer for the HTL’s solvent.The uniform QD layer leads the inverted red QLED device to achieve a low turn-on voltage of 1.8 V,a high maximum luminance of 105500 cd/m2,and a remarkable maximum external quantum efficiency of 13.34%.This approach releases the considerable potential of HTL materials selection and offers a promising avenue for the development of high-performance inverted QLEDs.

Impedance spectroscopy for quantum dot light-emitting diodes

Impedance spectroscopy has been increasingly employed in quantum dot light-emitting diodes(QLEDs)to investigate the charge dynamics and device physics.In this review,we introduce the mathematical basics of impedance spectroscopy that applied to QLEDs.In particular,we focus on the Nyquist plot,Mott-Schottky analysis,capacitance-frequency and capacitance-voltage characteristics,and the d C/d V measurement of the QLEDs.These impedance measurements can provide critical information on electrical parameters such as equivalent circuit models,characteristic time constants,charge injection and recombination points,and trap distribution of the QLEDs.However,this paper will also discuss the disadvantages and limitations of these measurements.Fundamentally,this review provides a deeper understanding of the device physics of QLEDs through the application of impedance spectroscopy,offering valuable insights into the analysis of performance loss and degradation mechanisms of QLEDs.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.

Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes

Hybrid lead halide perovskites have received great attention in the field of light-emitting diodes(LEDs)owing to their excellent optoelectronic properties,low cost,and high color purity.To data,the external quantum efficiency(EQE)of lead halide perovskites LEDs has been reported to exceed 20%[1].Even so,the toxicity of conventional lead has cast a gloomy shadow over their further application.

Interface engineering yields efficient perovskite light-emitting diodes

Metal-halide perovskites(MHPs)have emerged as a new class of semiconductors used in perovskite solar cells(PSCs)[1-5],perovskite light-emitting diodes(PeLEDs)[6-12],photo/X-ray detectors[13-16],and memristors[17,18].Pe LEDs can emit different light with high purity[19,20].

Temperature effects on photoluminescence of YAG:Ce^(3+) phosphor and performance in white light-emitting diodes

The well crystalline YAG：Ce^3＋ phosphor was synthesized by sold-state method, and the temperature dependence of excitation and emission spectra of YAG：Ce^3＋ phosphor were investigated in the temperature range from room temperature to 573 K. With temperature increasing, it was noted that the emission intensity of as-repared phosphors decreased considerably more rapidly when pumped by 460 nm than by 340 nm. The temperature-intensity curves under different excitation wavelengths were obtained using an Arrhenius function, and the corresponding activation energies were also obtained respectively. Thus, the experimental phenomenon was discussed in terms of nonradiative decay rate. The effects of as-prepared phosphors on the performance of the white LED with changing temperature were also studied.

Fabrication and Emission Properties of a n-ZnO/p-GaN Heterojunction Light-Emitting Diode

We report the fabrication and characterization of light-emitting diodes based on n-ZnO/p-GaN heterojunctions. The n-type ZnO epilayer is deposited by metalorganic chemical vapor deposition （MOCVD） on a MOCVD grown Mg-doped p-GaN layer to form a p-n heterojunction. During the etching process, the relation between the etching depth and the etching time is linear in a HF and NH4 CI solution of a certain ratio. The etching rates of the SiO2 and ZnO are well controlled,which are essential for device fabrication. The current-voltage relationship of this heterojunction shows a diode-like rectifying behavior. In contrast to previous reports,electroluminescence （EL） emissions are observed by the naked eye at room temperature from the n-ZnO/p-GaN heterojunction under forward-and reverse-bias. The origins of these EL emissions are discussed in comparison with the pho- toluminescence spectra.

A green-yellow emitting β-Sr_2SiO_4:Eu^(2+) phosphor for near ultraviolet chip white-light-emitting diode

Sr2SiO4：xEu^2＋ phosphors were synthesized through the solid-state reaction technique. The crystal phase of Sr2SiO4：xEu^2＋ phosphor manipulated by Eu^2＋ concentration was studied. The phase transited from β to α＇ in Sr2SiO4：xEu^2＋ phosphor with increasing europium concentration. The single β phase was formed as x≤005 and changed α＇ phase when x〉0.01. The emission spectrum of the β-Sr2SiO4：Eu^2＋ phosphor consisted of a green-yellow broadband peaking at around 540 nm and a blue band at 470 nm under near ultraviolet excitation. The white LEDs by combining near ultraviolet chips with β-Sr2SiO4：Eu^2＋ phosphors were fabricated. The luminous efficiency （15.7lm/W） was higher than α＇-Sr2SiO4：Eu^2＋ phosphor white LED.

Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr_(3) quantum dots

All-inorganic CsPbBr_(3) perovskite quantum dots(QDs)have received great attention in white light emission because of their outstanding properties.However,their practical application is hindered by poor stability.Herein,we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr_(3) QDs by using 2-hexyldecanoic acid(DA)as a ligand to replace the regular oleic acid(OA)ligand.Thanks to the strong binding energy between DA ligand and QDs,the modified QDs not only show a high photoluminescence quantum yield(PLQY)of 96%but also exhibit high stability against ethanol and water.Thereby warm white light-emitting diodes(WLEDs)are constructed by combining lig-and modified CsPbBr_(3) QDs with red AgInZnS QDs on blue emitting InGaN chips,exhibiting a color rendering index of 93,a power efficiency of 64.8 lm/W,a CIE coordinate of(0.44,0.42)and correlated color temperature value of 3018 K.In ad-dition,WLEDs based on ligand modified CsPbBr_(3) QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr_(3) QDs.The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr_(3) QDs are ideal for WLEDs application.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

New Rare-Earth Containing (Sr_(1-y)Eu_y)_2Al_2Si_(10)N_(14)O_4 Phosphors for Light-Emitting Diodes

Remarkable progress was made in the development of white-light-emitting diodes （LEDs）. White LEDs provided a light element having a semiconductor InGaN light-emitting chip （blue or UV LEDs） and luminescent phosphors. Here we reported the sialon s-phase of （Sr,Eu）2A12Si10N14O4. Eu^2＋ activator ions that were substituted for the strontium site represented a new type of yeUow-green phosphor that could be excited by blue LEDs used for application in the fabrication of white LEDs.

Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

GaN-based light-emitting diodes （LEDs） with surface-textured indium tin oxide （ITO） as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma （ICP） etching technology using a monolayer of nickel （Ni） nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.