Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbon...Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).展开更多
We introduce the Thomsen anisotropic parameters into the approximate linear reflection coefficient equation for P-SV wave in weakly anisotropic HTI media. From this we get a new, more effective, and practical reflecti...We introduce the Thomsen anisotropic parameters into the approximate linear reflection coefficient equation for P-SV wave in weakly anisotropic HTI media. From this we get a new, more effective, and practical reflection coefficient equation. We performed forward modeling to AVO attributes, obtaining excellent results. The combined AVO attribute analysis of PP and PS reflection data can greatly reduce ambiguity, obtain better petrophysical parameters, and improve parameter accuracy.展开更多
In this paper, let T be a bounded linear operator on a complex Hilbert H. We give and prove that every p-w-hyponormal operator has Bishop's property(β) and spectral properties; Quasi-similar p-w-hyponormal operat...In this paper, let T be a bounded linear operator on a complex Hilbert H. We give and prove that every p-w-hyponormal operator has Bishop's property(β) and spectral properties; Quasi-similar p-w-hyponormal operators have equal spectra and equal essential spectra. Finally, for p-w-hyponormal operators, we give a kind of proof of its normality by use of properties of partial isometry.展开更多
Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and in...Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.展开更多
The influence of the carrier pseudo-boehmite （PB）, which was impregnated with a Ni-Mo-P solution under over- saturation conditions and treated at different temperatures, on its property for adsorption of active meta...The influence of the carrier pseudo-boehmite （PB）, which was impregnated with a Ni-Mo-P solution under over- saturation conditions and treated at different temperatures, on its property for adsorption of active metals （Ni, Mo） was studied. The results showed that the amount for adsorption of active metal was decreased with an increasing treatment tem- perature of the carrier. After phase transition of the carrier PB to γ-Al2O3, its capacity for adsorption of active metals was significantly reduced. The difference in properties for adsorption of active metals （Ni, Mo） by PB dried at 120℃ and γ-Al2O3 calcined at 600℃ was studied in detail. The results suggested that the ability of the PB carrier to adsorb metals was higher than that of theγ-Al2O3 carrier. Especially, the ratio of chemically adsorbed metals on the PB support was much higher than 3＇-alumina. The chemical adsorption sites on the PB carrier were proved to be much more than those on the γ-Al2O3 carrier. Ni and Mo chemical adsorption sites differed a lot on the carrier possibly because of the difference in chemical adsorption sites.展开更多
文摘Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).
基金the National "973" Project (No.2007CB209603) the "863" Project (No.2006AA06Z108)
文摘We introduce the Thomsen anisotropic parameters into the approximate linear reflection coefficient equation for P-SV wave in weakly anisotropic HTI media. From this we get a new, more effective, and practical reflection coefficient equation. We performed forward modeling to AVO attributes, obtaining excellent results. The combined AVO attribute analysis of PP and PS reflection data can greatly reduce ambiguity, obtain better petrophysical parameters, and improve parameter accuracy.
基金Natural Science and Education Foundation of Henan Province(2007110016)
文摘In this paper, let T be a bounded linear operator on a complex Hilbert H. We give and prove that every p-w-hyponormal operator has Bishop's property(β) and spectral properties; Quasi-similar p-w-hyponormal operators have equal spectra and equal essential spectra. Finally, for p-w-hyponormal operators, we give a kind of proof of its normality by use of properties of partial isometry.
基金Project is supported by the National Natural Science Foundationof China (Grant No 60076023)
文摘Interface characteristics possess very important influence on the performance of thin film devices. ITO/ PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy （XPS） and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTODA/p- Si,not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of C1s and O1s are more remarkable.
文摘The influence of the carrier pseudo-boehmite （PB）, which was impregnated with a Ni-Mo-P solution under over- saturation conditions and treated at different temperatures, on its property for adsorption of active metals （Ni, Mo） was studied. The results showed that the amount for adsorption of active metal was decreased with an increasing treatment tem- perature of the carrier. After phase transition of the carrier PB to γ-Al2O3, its capacity for adsorption of active metals was significantly reduced. The difference in properties for adsorption of active metals （Ni, Mo） by PB dried at 120℃ and γ-Al2O3 calcined at 600℃ was studied in detail. The results suggested that the ability of the PB carrier to adsorb metals was higher than that of theγ-Al2O3 carrier. Especially, the ratio of chemically adsorbed metals on the PB support was much higher than 3＇-alumina. The chemical adsorption sites on the PB carrier were proved to be much more than those on the γ-Al2O3 carrier. Ni and Mo chemical adsorption sites differed a lot on the carrier possibly because of the difference in chemical adsorption sites.
