Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied ...Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.展开更多
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state throu...In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.展开更多
增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型...增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。展开更多
GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double ...GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.展开更多
基金supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493)the National Key Research and Development Program of China(2022YFB2802801)+2 种基金the Key Research and Development Program of Jiangsu Province(BE2021008-1)the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007)the Natural Science Foundation of Jiangsu Province(BK20232042).
文摘Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.
基金supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)+4 种基金in part by the CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by the IMECAS-HKUST-Joint Laboratory of Microelectronics
文摘In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
文摘增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62104184,62234009,62090014,62188102,62104178,and 62104179)the Fundamental Research Funds for the Central Universities of China(Grant Nos.YJSJ23019,XJSJ23047,and ZDRC2002)+1 种基金the China National Postdoctoral Program for Innovative Talents(Grant No.BX20200262)the China Postdoctoral Science Foundation(Grant No.2021M692499)。
文摘GaN-based p-channel heterostructure field-effect transistors(p-HFETs)face significant constraints on on-state currents compared with n-channel high electron mobility transistors.In this work,we propose a novel double heterostructure which introduces an additional p-GaN insertion layer into traditional p-HFETs.The impact of the device structure on the hole densities and valence band energies of both the upper and lower channels is analyzed by using Silvaco TACD simulations,including the thickness of the upper AlGaN layer and the doping impurities and concentration in the GaN buffer layer,as well as the thickness and Mg-doping concentration in the p-GaN insertion layer.With the help of the p-GaN insertion layer,the C-doping concentration in the GaN buffer layer can be reduced,while the density of the two-dimensional hole gas in the lower channel is enhanced at the same time.This work suggests that a double heterostructure with a p-GaN insertion layer is a better approach to improve p-HFETs compared with those devices with C-doped buffer layer alone.
