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Spin-Orbit Scattering Effects on Hall Conductivity in a Layered Disordered Electron System
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作者 王勇刚 杨永宏 《Journal of Southeast University(English Edition)》 EI CAS 2002年第2期191-196,共6页
Spin-orbit scattering effects in a layered quasi-2D disordered electron system have been investigated by the diagrammatic techniques in perturbation theory. The expression of Cooperon (propagator in particle-particle ... Spin-orbit scattering effects in a layered quasi-2D disordered electron system have been investigated by the diagrammatic techniques in perturbation theory. The expression of Cooperon (propagator in particle-particle channel) is obtained as the function of interlayer coupling. The analytical result for the quantum correction to Hall conductivity has been obtained as functions of elastic, inelastic and spin-orbit scattering times. It is shown that the strong and weak couplings correspond, respectively, to the 3D and 2D situations. The Hall coefficient is shown to vanish. The relevant dimensional crossover behavior from 3D to 2D with decreasing the interlayer coupling has been discussed, and the condition for the crossover has been obtained. The present theory is expected to apply for the electronic transport in tunneling superlattices. 展开更多
关键词 layered system weak-localization Hall conductivity spin-orbit scattering
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Density of States in Two-Dimensional Square Lattices Around Half Filling with Strong Impurities
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作者 GUYu YANGYong-Hong +1 位作者 WANGYong-Gang ZHANGQun 《Communications in Theoretical Physics》 SCIE CAS CSCD 2005年第4期743-748,共6页
We calculate the lowest-order quantum-interference correction to the density of states (DOS) of weakly-disordered two-dimensional (2D) tight-binding square lattices around half filling. The impurities are assumed to b... We calculate the lowest-order quantum-interference correction to the density of states (DOS) of weakly-disordered two-dimensional (2D) tight-binding square lattices around half filling. The impurities are assumed to be randomly distributed on small fractions of the sites, and have a-strong potential yielding a unitary-limit scattering. In addition to the usual diffusive modes in the retarded-advanced channel, there appear diffusive pi modes in the retarded-retarded (or advanced-advanced) channel due to the existence of particle-hole symmetry. It is found that the pi-mode diffuson gives rise to a logarithmic suppression to the DOS near the band center, which prevails over the positive correction contributed by pi-mode cooperon. As a result, the DOS is subject to a negative total correction. This result is qualitatively different from the divergent behavior of the DOS at the band center predicted previously for disordered 2D two-sublattice models with the particle-hole symmetry. 展开更多
关键词 weak-localization density of states two-dimensional lattice
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Observation of electron weak localization and correlation effects in disordered graphene 被引量:1
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作者 TAN ChangLing TAN ZhenBing +7 位作者 MA Li QU FanMing YANG Fan CHEN Jun LIU GuangTong YANG HaiFang YANG ChangLi LU Li 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2009年第9期1293-1298,共6页
We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two... We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample. 展开更多
关键词 GRAPHENE weak-localization electron-electron interaction power LAW
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