Phase-stable wide-bandgap perovskites enabled by suppressed ion migration

Wide-bandgap(>1.7 eV)perovskites suffer from severe light-induced phase segregation due to high bromine content,causing irreversible damage to devices stability.However,the strategies of suppressing photoinduced phase segregation and related mechanisms have not been fully disclosed.Here,we report a new passivation agent 4-aminotetrahydrothiopyran hydrochloride(4-ATpHCl)with multifunctional groups for the interface treatment of a 1.77-eV wide-bandgap perovskite film.4-ATpH^(+)impeded halogen ion migration by anchoring on the perovskite surface,leading to the inhibition of phase segregation and thus the passivation of defects,which is ascribed to the interaction of 4-ATpH^(+)with perovskite and the formation of low-dimensional perovskites.Finally,the champion device achieved an efficiency of 19.32%with an open-circuit voltage(V_(OC))of 1.314 V and a fill factor of 83.32%.Moreover,4-ATpHCl modified device exhibited significant improved stability as compared with control one.The target device maintained 80%of its initial efficiency after 519 h of maximum power output(MPP)tracking under 1 sun illumination,however,the control device showed a rapid decrease in efficiency after 267 h.Finally,an efficiency of 27.38%of the champion 4-terminal all-perovskite tandem solar cell was achieved by mechanically stacking this wide-bandgap top subcell with a 1.25-eV low-bandgap perovskite bottom subcell.

Surface repair of wide-bandgap perovskites for high-performance all-perovskite tandem solar cells

Wide-bandgap(WBG)perovskite solar cells(PSCs)play a fundamental role in perovskite-based tandem solar cells.However,the efficiency of WBG PSCs is limited by significant open-circuit voltage losses,which are primarily caused by surface defects.In this study,we present a novel method for modifying surfaces using the multifunctional S-ethylisothiourea hydrobromide(SEBr),which can passivate both Pb^(-1)and FA^(-1)terminated surfaces,Moreover,the SEBr upshifted the Fermi level at the perovskite interface,thereby promoting carrier collection.This proposed method was effective for both 1.67 and 1.77 eV WBG PSCs,achieving power conversion efficiencies(PCEs)of 22.47%and 19.90%,respectively,with V_(OC)values of 1.28 and 1.33 V,along with improved film and device stability.With this advancement,we were able to fabricate monolithic all-perovskite tandem solar cells with a champion PCE of 27.10%,This research offers valuable insights for passivating the surface trap states of WBG perovskite through rational multifunctional molecular engineering.

Recent Advances in Wide-Bandgap Organic-Inorganic Halide Perovskite Solar Cells and Tandem Application

Perovskite-based tandem solar cells have attracted increasing interest because of its great potential to surpass the Shockley-Queisser limit set for single-junction solar cells.In the tandem architectures,the wide-bandgap(WBG)perovskites act as the front absorber to offer higher open-circuit voltage(VOC)for reduced thermalization losses.Taking advantage of tunable bandgap of the perovskite materials,the WBG perovskites can be easily obtained by substituting halide iodine with bromine,and substituting organic ions FA and MA with Cs.To date,the most concerned issues for the WBG perovskite solar cells(PSCs)are huge VOC deficit and severe photo-induced phase separation.Reducing VOC loss and improving photostability of the WBG PSCs are crucial for further efficiency breakthrough.Recently,scientists have made great efforts to overcome these key issues with tremendous progresses.In this review,we first summarize the recent progress of WBG perovskites from the aspects of compositions,additives,charge transport layers,interfaces and preparation methods.The key factors affecting efficiency and stability are then carefully discussed,which would provide decent guidance to develop highly efficient and stable WBG PSCs for tandem application.

Photoinduced phase segregation in wide-bandgap mixed-halide perovskite solar cells

Wide-bandgap(WB)mixed-halide perovskite solar cells(PSCs)play a crucial role in perovskite-based tandem solar cells(TSCs),enabling them to exceed the Shockley-Queisser limits of single-junction solar cells.Nonetheless,the lack of stability in WB perovskite films due to photoinduced phase segregation undermines the stability of WB PSCs and their TSCs,thus impeding the commercialization of perovskite-based TSCs.Many efforts have been made to suppress photoinduced phase segregation in WB perovskite films and significant progresses have been obtained.In this review,we elaborate the mechanisms behind photoinduced phase segregation and its impact on the photovoltaic performance and stability of devices.The importance role of advanced characterization techniques in confirming the photoinduced phase segregation are comprehensively summarized.Beyond that,the effective strategies to alleviate photoinduced phase segregation in WB mixed halide PSCs are systematically assessed.Finally,the prospects for developing highly efficient and stable WB PSCs in tandem application are also presented.

Interface engineering of inverted wide-bandgap perovskite solar cells for tandem photovoltaics

Wide-bandgap perovskite solar cells(WBG PSCs)have garnered significant research attention for their potential in tandem solar cells.However,they face challenges such as high open-circuit voltage losses and severe phase instability.These issues are primarily owing to the formation of defects,ion migration,and energy level mismatches at the interface of WBG perovskite devices.Meanwhile,inverted PSCs demonstrate superior stability potential and compatibility with tandem devices,making them the most promising application for WBG perovskite materials.Consequently,interface modulation for such devices has become imperative.In this review,from the perspective of applicability in tandem devices,we first provided a concise overview of WBG perovskite research and its efficiency progress in inverted devices.We further discussed interface carrier dynamics and the potential impact of interfaces on such device performance.Afterward,we presented a comprehensive summary of interface engineering in inverted WBG perovskite(1.60 eV-1.80 eV)solar cells.The research particularly explored both the upper and buried interfaces of WBG absorbers in the inverted PSCs,thoroughly investigating interface design strategies and outlining promising research directions.Finally,this review provides insight into the future development of interface engineering for high-performance and large-area WBG PSCs.

Efficient wide-bandgap perovskite solar cells with open-circuit voltage deficit below 0.4 V via hole-selective interface engineering

Wide-bandgap mixed-halide perovskite solar cells(WBG-PSCs)are promising top cells for efficient tandem photovoltaics to achieve high power conversion efficiency(PCE)at low cost.However,the open-circuit voltage(V_(OC))of WBG-PSCs is still unsatisfactory as the V_(OC)-deficit is generally larger than 0.45 V.Herein,we report a buried interface engineering strategy that substantially improves the V_(OC)of WBG-PSCs by inserting amphiphilic molecular hole-selective materials featuring with a cyanovinyl phosphonic acid(CPA)anchoring group between the perovskite and substrate.The assembly and redistribution of CPA-based amphiphilic molecules at the perovskite-substrate buried interface not only promotes the growth of a low-defect crystalline perovskite thin film,but also suppresses the photo-induced halide phase separation.The energy level alignment between wide-bandgap perovskite and the hole-selective layer is further improved by modulating the substituents on the triphenylamine donor moiety(methoxyls for MPA-CPA,methyls for Me PA-CPA,and bare TPA-CPA).Using a 1.68 e V bandgap perovskite,the Me PA-CPA-based devices achieved an unprecedentedly high V_(OC)of 1.29 V and PCE of 22.3%under standard AM 1.5 sunlight.The V_(OC)-deficit(<0.40 V)is the lowest value reported for WBG-PSCs.This work not only provides an effective approach to decreasing the V_(OC)-deficit of WBG-PSCs,but also confirms the importance of energy level alignment at the charge-selective layers in PSCs.

Revealing the crystallization process and realizing uniform 1.8 eV MA-based wide-bandgap mixed-halide perovskites via solution engineering

Wide-bandgap perovskites are recently drawing tremendous attention in the community for high-efficiency all-perovskite tandem solar cells.However,the formamidinium (FA^+) and methylammonium (MA^+) based wide-bandgap mixed halide perovskites suffered from high density of traps and pin-holes,respectively.Fundamental understanding on the crystallization and film formation processes are keys to overcome those challenges but not yet clearly understood.In this study,an in-situ photoluminescence technique was used to investigate the perovskite crystallization during the thermal annealing process.It is found that the crystallization of a mixed halide perovskite with bromide (Br^-) and iodine (I^-) ions following the Ostward ripening crystal growth.Interestingly,it is found that the initial nucleation reaction is quickly completed in the first few seconds,however,leaving the small crystals with inhomogeneous composition.The different aggregation affinities of such inhomogeneous small crystals provoke the formation of pin-holes during the thermal annealing process.By engineering the precursor solution to control the nucleation rate,the chemical composition of the small crystals has become homogenous.Uniform pin-hole free high Br-composited wide-bandgap MA0.9Cs0.1Pb(I0.6Br0.4)3 perovskite films with bandgap energy of 1.8 eV have been realized.The corresponding photovoltaic devices have achieved an encouraging device efficiency of 15.1% with superb photostability.

Progress in Fluorene-based Wide-bandgap Steric Semiconductors

Molecular bulks are favorable for the thermal and morphological stability in organic wide-bandgap semiconducting polymers with potential applications in both information and energy electronics. In this review, we present our progress in the design of fluorene-based bulky semiconductors with a fractal four-element pattern. Firstly, we established one-pot methods to spirofluorenes, especially spiro[fluorene-9,9＇-xanthene] （SFX） serving as the next-generation spiro-based semiconductors. Secondly, we observed the supramolecular forces at the bulky groups and discovered the supramolecular steric hindrance （SSH） effect on polymorphisms, nanocrystals as well as device performance. Thus, a synergistically molecular attractor-repulsor theory （SMART） was proposed for the control of nanocrystal morphology, thin film phase and morphology. Thirdly, the third possible type of defects has been identified to generate green band （g-band） emission in wide- bandgap semiconductors by the introduction of molecular strain design of cyclofluorene. Finally, the first bulky polydiarylfluorene with highly crystalline and β conformation was achieved by an attractor-repulsor design of tadpole-shape monomer, which offered an effective platform to fabricate stable wide-bandgap semiconducting devices. All the discoveries offer the solid basis to break through bottlenecks of organic/polymer wide-bandgap semiconductors by the improvements of overall performances.

Stabilizing wide-bandgap halide perovskites through hydrogen bonding

Wide-bandgap(WBG)perovskites have emerged as promising materials for the construction of perovskite/silicon tandem solar cells.However,poor long-term operational stability due to the notorious photo-induced halide segregation is commonly observed.Here,we report the synthesis of stable~1.73 eV MA-based mixed I/Br WBG perovskites by ionic liquid solvent,methylammonium acetate(MAAc).The special internal hydrogen bond(N–H…I and N–H…Br)environment in the ionic liquid MAAc solvent over traditional N,N-dimethylformamide/dimethyl sulfoxide solvent stabilizes the diffusion of halide ions.This allows the suppression of the halide segregation in the mixed I/Br WBG perovskite film,which is previously suggested to be difficult.The hydrogen bonds also enable excellent decoupling of the crystal nucleation and growth process.Finally,a champion device efficiency of 20.59%is achieved,which is one of the highest reports,with improved ambient air,heat,and light stability.

Comparison of Wide-bandgap Devices in 1 kV,3 kW LLC Converters

Emerging wide-bandgap(WBG)devices,such as silicon carbide(SiC)MOSFETs and gallium nitride(GaN)high-electron-mobility transistors(HEMTs)provide new opportunities to realize high efficiency,high power density,and high reliability in several kHz,1 kV input,and several kW output applications.However,the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage,high-frequency,medium-high-power DC conversion applications have not yet been investigated thoroughly.Two 1 kV,3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters,power density,zero voltage switch realization,and overall efficiency.This provides guidance for the appropriate evaluation of WBG devices in high-voltage,high-frequency,and medium-high-power applications.

Proton-transfer-induced in situ defect passivation for highly efficient wide-bandgap inverted perovskite solar cells

Wide-bandgap(≥1.68 eV)inverted perovskite solar cells(PSCs)have been recognized as promising top component cells on the commercial crystalline silicon cell to surpass its Shockley-Queisser efficiency limit.However,the power conversion efficiency(PCE)is dramatically limited by the huge open-circuit voltage(V_(OC))loss.Herein,we propose a proton-transfer-induced in situ defect passivation strategy to reduce the nonradiative recombination to minimize the VOC loss.Specifically,a liquid-form neutral amine,3,4,5-trifluorobenzylamine(TFBA)was added into ethyl acetate(EA)as anti-solvent for the film preparation,which induces proton-transfer from the formamidinium(FA)and methylammonium(MA)in the perovskite precursors to the TFBA.The protonated TFBA exhibits a gradient distribution near the surface of the perovskite film,achieving in situ defect passivation.As a result,TFBA-based 1.68 eV-bandgap inverted PSCs afforded a PCE of 20.39%,one of the highest for cells with this bandgap.Meanwhile,due to the strong interaction between TFBA and the perovskite film,the mixed-halide perovskites demonstrate much better photostability.Our findings offer an effective strategy to passivate defects in PSCs.

Penta-P2X （X=C, Si） monolayers as wide-bandgap semiconductors： A first principles prediction

By means of density functional theory computations, we predicted two novel two-dimensional （2D） nanolnaterials, namely P2X （X=C, Si） monolayers with pentagonal configurations. Their structures, stabilities, intrinsic electronic, and optical properties as well as the effect of external strain to the elec- tronic properties have been systematically examined. Our computations showed that these P2C and P2Si monolayers have rather high thermodynamic, kinetic, and thermal stabilities, and are indirect semiconductors with wide bandgaps （2.76 eV and 2.69 eV, respectively） which can be tuned by an external strain. These monolayers exhibit high absorptions in the UV region, but behave as almost transparent layers for visible light in the electromagnetic spectrum. Their high stabilities and excep- tional electronic and optical properties suggest them as promising candidates for future applications in UV-light shielding and antireflection layers in solar cells.

电力电子系统中的电磁兼容专辑主编述评

SiC、GaN新一代宽禁带功率半导体在推动电力电子设备快速高频化、高效化和小体积化的同时,更容易干扰敏感负载、影响无线电通讯,乃至危害自身安全、可靠运行,从而给电力电子设备内外部的电磁兼容性能带来极大的压力和挑战。近年来,功率开关器件的射频特性、磁性器件的宽频带电磁模型、开关电源电磁辐射机理、无线电能传输近场特性、新型电磁干扰EMI(electromagnetic interference)滤波器设计成为研究热点,并受到了学术界及工业界的持续关注。《电源学报》特别推出“电力电子系统中的电磁兼容”专辑,以期推进电力电子系统电磁兼容分析与设计领域难点和热点问题的探讨。

一种新型可调驱动电压的SiC/Si混合开关驱动电路

为提高碳化硅金属氧化物半导体场效应晶体管(silicon carbide metal oxide semiconductor filed effect transistor,SiC-MOSFET)与硅基绝缘栅极双极晶体管(silicon insulated gate bipolar transistor,Si-IGBT)并联混合开关(SiC/Si hybrid switch,SiC/Si HyS)的可靠性与适用性,该文提出一种可变驱动电压的SiC/Si HyS栅极驱动电路结构,采用一路脉冲宽度调制(pulse width modulation,PWM)控制信号和一个驱动芯片产生不同电压幅值的栅极控制信号,分别控制SiC/Si HyS中的SiC-MOSFET和Si-IGBT。相比于传统采用2个独立驱动电路的SiC/Si HyS驱动结构,该驱动电路大幅度降低SiC/Si HyS栅极驱动电路的复杂度,降低SiC-MOSFET关断过程中Si-IGBT误导通的可能性,提升混合开关的工作可靠性。该文首先分析所设计驱动电路工作原理,给出驱动电压调节方法;其次,建立耦合电容端电压纹波和系统启动时电容端电压暂态数学模型,通过仿真和实验验证模型准确性;搭建2 kW的SiC/Si混合开关Buck电路,验证该文所提混合开关驱动电路可行性,从SiC/Si HyS功率器件关断损耗、驱动电路功率损耗、成本以及体积4个方面分析所提驱动结构的优势。

A novel one-time-programmable memory unit based on Schottky-type p-GaN diode

In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.

Efficient Monolithic Perovskite/Silicon Tandem Photovoltaics

Tunable bandgaps make halide perovskites promising candidates for developing tandem solar cells(TSCs),a strategy to break the radiative limit of 33.7%for single-junction solar cells.Combining perovskites with market-dominant crystalline silicon(c-Si)is particularly attractive;simple estimates based on the bandgap matching indicate that the efficiency limit in such tandem device is as high as 46%.However,state-of-the-art perovskite/c-Si TSCs only achieve an efficiency of~32.5%,implying significant challenges and also rich opportunities.In this review,we start with the operating mechanism and efficiency limit of TSCs,followed by systematical discussions on wide-bandgap perovskite front cells,interface selective contacts,and electrical interconnection layer,as well as photon management for highly efficient perovskite/c-Si TSCs.We highlight the challenges in this field and provide our understanding of future research directions toward highly efficient and stable large-scale wide-bandgap perovskite front cells for the commercialization of perovskite/c-Si TSCs.

Selection of dopants and doping sites in semiconductors:the case of AlN

The choices of proper dopants and doping sites significantly influence the doping efficiency.In this work,using doping in Al N as an example,we discuss how to choose dopants and doping sites in semiconductors to create shallow defect levels.By comparing the defect properties of C_(N),O_(N),Mg_(Al),and Si_(Al)in AlN and analyzing the pros and cons of different doping approaches from the aspects of size mismatch between dopant and host elements,electronegativity difference and perturbation to the band edge states after the substitution,we propose that Mg_(Al)and Si_(Al)should be the best dopants and doping sites for p-type and n-type doping,respectively.Further first-principles calculations verify our predictions as these defects present lower formation energies and shallower defect levels.The defect charge distributions also show that the band edge states,which mainly consist of N-s and p orbitals,are less perturbed when Al is substituted,therefore,the derived defect states turn out to be delocalized,opposite to the situation when N is substituted.This approach of analyzing the band structure of the host material and choosing dopants and doping sites to minimize the perturbation on the host band structure is general and can provide reliable estimations for finding shallow defect levels in semiconductors.

β-Ga_(2)O_(3)的p型掺杂研究进展

β-Ga_(2)O_(3)具有超宽禁带宽度、高击穿场强、较高的巴利加优值等优点使其成为一种新兴半导体材料,在高功率电子器件、气体传感器、日盲紫外探测器等方面有着极大的应用潜力,但p型掺杂难的问题成为了β-Ga_(2)O_(3)发展的巨大障碍。本文首先简要概述了β-Ga_(2)O_(3)的优点,并介绍了其晶体结构和基本性质。其次,说明了β-Ga_(2)O_(3)的本征缺陷,尤其是氧空位对导电性能的影响。然后,详细讨论了β-Ga_(2)O_(3) p型掺杂的研究现状,包括p型掺杂困难的原因和N掺杂、Mg掺杂、Zn掺杂、其他受主元素掺杂、两种元素共掺杂以及其他方法。最后,总结并对β-Ga_(2)O_(3)未来的发展进行了展望。

丙胺盐酸盐辅助结合气淬法制备高效宽带隙钙钛矿太阳电池

宽带隙钙钛矿与晶硅电池结合制备叠层太阳电池,其效率可以超越单结太阳电池的理论极限.然而,宽带隙钙钛矿薄膜结晶速率快,导致薄膜结晶质量差且具有大量缺陷,严重降低电池的光电转换性能.本文采用温和的气淬法制备宽带隙钙钛矿薄膜,并引入丙胺盐酸盐作为添加剂改善钙钛矿薄膜的结晶质量.丙胺阳离子与钙钛矿组分相互作用生成了二维钙钛矿相,钙钛矿以二维相作为生长模板降低了α相钙钛矿的形成能,同时辅助钙钛矿均匀成核和择优取向生长,增大了晶粒尺寸.使用该策略制备的带隙为1.68 eV的钙钛矿太阳电池实现了21.48%的光电转换效率.此外,制备的8 cm×8 cm的宽带隙钙钛矿薄膜具有良好的均匀性.本工作为高效、大面积钙钛矿基的光伏器件的制备工艺提供了新的策略.

基于大厚度六方氮化硼中子探测器的制备

六方氮化硼是一种中子敏感材料。介绍了使用低压气相化学沉积在1673K下以大约20μm/h的生长速率制备了高质量203μm厚的六方氮化硼。在氮化硼的两侧沉积厚度为100nm的金电极,制备了垂直结构的六方氮化硼中子探测器。该器件的电学性质表明制备的六方氮化硼材料的迁移率寿命的乘积(μτ)为2.8×10^(-6)cm^(2)/V,电阻率为1.5×10^(14)Ω·cm。在850V电压下,该探测器对热中子的探测效率为34.5%,电荷收集效率为60%。