Self-assembled S-scheme In_(2.77)S_(4)/K^(+)-doped g-C_(3)N_(4)photocatalyst with selective O_(2) reduction pathway for efficient H_(2)O_(2) production using water and air

The development of an efficient artificial H_(2)O_(2) photosynthesis system is a challenging work using H_(2)O and O_(2) as starting materials.Herein,3D In_(2.77)S_(4) nanoflower precursor was in-situ deposited on K^(+)-doped g-C_(3)N_(4)(KCN)nanosheets using a solvothermal method,then In_(2.77)S_(4)/KCN(IS/KCN)het-erojunction with an intimate interface was obtained after a calcination process.The investigation shows that the photocatalytic H_(2)O_(2) production rate of 50IS/KCN can reach up to 1.36 mmol g^(-1)h^(-1)without any sacrificial reagents under visible light irradiation,which is 9.2 times and 4.1 times higher than that of KCN and In_(2.77)S_(4)/respectively.The enhanced activity of the above composite can be mainly attributed to the S-scheme charge transfer route between KCN and In_(2.77)S_(4) according to density functional theory calculations,electron paramagnetic resonance and free radical capture tests,leading to an expanded light response range and rapid charge separation at their interface,as well as preserving the active electrons and holes for H_(2)O_(2) production.Besides,the unique 3D nanostructure and surface hydrophobicity of IS/KCN facilitate the diffusion and transportation of O_(2) around the active centers,the energy barriers of O_(2) protonation and H_(2)O_(2) desorption steps are ef-fectively reduced over the composite.In addition,this system also exhibits excellent light harvesting ability and stability.This work provides a potential strategy to explore a sustainable H_(2)O_(2) photo-synthesis pathway through the design of heterojunctions with intimate interfaces and desired reac-tion thermodynamics and kinetics.

First-Principles Investigation of Charge Transfer Mechanism of B-Doped 3C-SiC Semiconductor Material

This study delves into the charge transfer mechanism of boron (B)-doped 3C-SiC through first-principles investigations. We explore the effects of B doping on the electronic properties of 3C-SiC, focusing on a 12.5% impurity concentration. Our comprehensive analysis encompasses structural properties, electronic band structures, and charge density distributions. The optimized lattice constant and band gap energy of 3C-SiC were found to be 4.373 Å and 1.36 eV respectively, which is in agreement with previous research (Bui, 2012;Muchiri et al., 2018). Our results show that B doping narrows the band gap, enhances electrical conductivity, and influences charge transfer interactions. The charge density analysis reveals substantial interactions between B dopants and surrounding carbon atoms. This work not only enhances our understanding of the material’s electronic properties, but also highlights the importance of charge density analysis for characterizing charge transfer mechanisms and their implications in the 3C-SiC semiconductors.

棒状结构NaGdF_(4):Yb^(3+),Er^(3+)上转换发光性能的研究

以乙二胺四乙酸二钠(EDTD-2Na)为螯合剂,采用水热法合成了棒状结构的NaGdF_(4):Yb^(3+),Er^(3+)纳米粉末。分别借助X射线衍射(XRD)、荧光光谱仪(PL)和扫描显微镜(SEM)对其晶体结构、发光强度和表面形貌进行分析和表征。探究了稀土前驱体、水热温度和水热时间的实验条件对NaGdF_(4):Yb^(3+),Er^(3+)纳米粉末上转换发光强度的影响;研究了氟源和钠源对NaGdF_(4):Yb^(3+),Er^(3+)晶体形貌和上转换发光强度的改善;同时,采用煅烧处理的方法,进一步探究样品的形貌和发光强度收到的影响。实验结果表明NH4F与NaOH作为氟源和钠源及200℃煅烧1 h得到的棒状结构NaGdF_(4):Yb^(3+),Er^(3+)的发光强度最好,色坐标(CIE)绿色发光强度从84%提升到94.88%。

亲水性CIT-NaYF_(4)∶Yb^(3+),Ho^(3+)纳米粒子的制备及其发光性能研究

采用溶剂热法制备了油溶性稀土掺杂上转换纳米粒子NaYF_(4)∶Yb^(3+),Ho^(3+),并利用TEM、XRD、IR、荧光光谱法等考察了反应温度、反应时间、掺杂比等反应条件对纳米粒子形貌、结构、发光性能的影响。结果表明,在反应温度为300℃、反应时间为50 min、稀土离子掺杂比为NaYF_(4)∶20%Yb^(3+),2%Ho^(3+)条件下,制备出的油溶性NaYF_(4)∶Yb^(3+),Ho^(3+)纳米粒子呈标准六方晶型,尺寸均一、单分散性好,平均粒径为31.55 nm。通过表面配体交换法成功将柠檬酸修饰在其表面,转为亲水性CIT-NaYF_(4)∶Yb^(3+),Ho^(3+)纳米粒子。

LD脉冲泵浦Er^(3+)/Yb^(3+):Lu_(2)Si_(2)O_(7)晶体百kHz激光器

目前1.5μm激光二极管(Laser Diode,LD)泵浦的铒镱共掺玻璃/晶体被动调Q微型激光器广泛应用于激光测距、激光雷达等领域。随着激光器输出重频的增加,玻璃面临突出的热效应问题,晶体的热导率是玻璃的10倍以上,有望能够实现比玻璃基质更高重频的激光输出。报道了一种通过LD脉冲端面泵浦Er^(3+)/Yb^(3+):Lu_(2)Si_(2)O_(7)晶体的百kHz人眼安全激光器。通过实验优化增益介质掺杂浓度和长度、泵浦光斑尺寸和调Q晶体初始透过率等实验参数,同时适当缩短脉宽,优化泵浦占空比,提高了输出重频的稳定性。最终获得了重频为100 kHz、单脉冲能量0.7μJ、脉冲宽度240 ns、光束质量M^(2)=1.61的1537 nm脉冲激光输出。实现了输出脉冲频率与泵浦的一致,保证了输出重频的稳定性,有效解决了输出重频具有随机性、不稳定、不可控等问题。

Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体的增强红色上转换发光与光学温度传感性能

采用密封的坩埚下降法技术生长了一系列Lu^(3+)(摩尔分数0、0.6%、1.2%、1.8%)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体。在980 nm LD激发下,观察到单晶体的绿光543 nm(^(5)S_(2)/^(5)F_(4)→^(5)I_(8))、红光656 nm(^(5)F_(5)→^(5)I_(8))以及近红外750 nm(^(5)S_(2)/^(5)F4→^(5)I_(7))上转换发光。从上转换发光强度随激发光强度的变化情况,确定了543 nm、656 nm与750 nm的发光为双光子跃迁过程。研究了Lu^(3+)离子掺杂浓度对其发光强度与荧光寿命的影响情况,随着Lu^(3+)掺杂浓度从0增加到1.8%,单晶体中的656 nm红光逐步增强,543 nm绿光与750 nm近红外光随之减弱,红绿光强度比从0.01增加到了1.55,而543 nm荧光寿命从1.29 ms降低至0.99 ms。Lu^(3+)离子的掺入取代Y^(3+)晶格位,改变了单晶体的局域场环境,导致上转换发光强度的变化。基于随温度变化的上转换红光656 nm(^(5)F5→^(5)I8)与绿光543 nm(^(5)S_(2)/^(5)F4→^(5)I8)的发光强度变化,研究了1.8%Lu^(3+)掺杂Na_(5)Y_(9)F_(32)∶Ho^(3+)/Yb^(3+)/Ce^(3+)单晶体在298~448 K范围内的绝对灵敏度和相对灵敏度最大值分别为0.242%·K^(-1)和0.217%·K^(-1)。

高热稳定CaGdAlO_(4)∶Er^(3+)/Yb^(3+)荧光粉的上转换发光及其温度传感性能

获得具有良好热稳定性和发光性能的非接触式光学温度传感材料是目前的研究热点之一,本工作通过高温固相法制备了Er^(3+)/Yb^(3+)共掺CaGdAlO_(4)∶Er_(x),Yb_(0.10)(x=0.006、0.008、0.010、0.012、0.014)荧光粉,尺寸大小分布在0.6~4.2μm。在980 nm激光激发下,该荧光粉在500~700 nm发射谱由两个发射带组成,528和550 nm处两个较强的绿光发射带,归属于Er^(3+)的^(2)H_(11/2)→^(4)I_(15/2)、^(4)S_(3/2)→^(4)I_(15/2)能级跃迁,663 nm处较弱的红光发射带,归属于Er^(3+)的^(4)F_(9/2)→^(4)I_(15/2)能级跃迁。上转换发光强度最大组分为CaGdAlO_(4)∶Er_(0.010),Yb_(0.10)。300~573 K变温发射谱表明,基于荧光强度比FIR_(528/550)参数,温度传感绝对灵敏度S_(A)从44.4×10^(-4) K^(-1)(@300 K)先增大到52.0×10^(-4) K^(-1)(@445 K)随后减小到49.0×10^(-4) K^(-1)(@573 K)。相对灵敏度S_(R)则从0.95×10^(-2) K^(-1)(@300 K)单调减小到0.27×10^(-2) K^(-1)(@573 K)。冷热循环实验表明该材料的热重复性优于98%。结果表明,CaGdAlO_(4)∶Er_(0.010),Yb_(0.10)荧光粉在光学温度传感领域具有潜在的应用前景。

不同激发波长下NaLaF_(4):Er^(3+)/Yb^(3+)的上转换光谱调控研究

为探究不同激发波长(980 nm、1 550 nm)对NaLaF_(4):Er^(3+)/Yb^(3+)上转换发光材料光谱调控的规律和机理,采用水热-固相两步反应法合成一系列不同Er^(3+)/Yb^(3+)掺杂浓度的NaLaF_(4)荧光粉。利用X射线衍射仪(XRD)、荧光分光光度计对材料进行测试,分析其发光性能与机理。结果表明,样品在980 nm激发下呈绿色发光,上转换发光强度随Er^(3+)/Yb^(3+)掺杂浓度增加而呈现先增后减的规律,该发光过程为双光子过程;而在1 550 nm激发下呈红色发光,上转换发光强度随Er^(3+)掺杂浓度增加而呈增强趋势,但随Yb^(3+)浓度增加而降低,发光过程为三光子过程。因此,通过调节激发光波长,在同组分NaLaF_(4):Er^(3+)/Yb^(3+)荧光粉中实现颜色可控的绿、红色发光,对设计新型光谱调控手段和探索新的发光材料具有一定的理论指导意义。

溶剂热法制备NaScF_(4):Yb^(3+)/Er^(3+)及其发光性能的研究

利用溶剂热法在油酸(OA),正辛醇(OC)及乙二醇(EG)三溶剂中成功制备出NaScF_(4):Yb^(3+)/Er^(3+)纳米颗粒。调节三种溶剂的不同比例观察对样品晶相、结构、尺寸及发光强度的影响。此外,我们使用了X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、荧光光谱仪对样品进行了表征。通过XRD证明在OA、OC、EG分别为16mL,12mL、4mL时成功合成出了纯相的NaScF_(4):Yb^(3+)/Er^(3+)纳米颗粒。SEM图进一步证明样品形貌均匀,分散性较好,粒径较小,颗粒尺寸为37.62±9.36nm。此外,样品的荧光光谱表明样品在980nm激光激发下能发射出红色荧光。因此,该方法下制备的NaScF_(4):Yb^(3+)/Er^(3+)尺寸较小,形貌较均匀,拥有强的红色发射且该材料有望用于生物成像、信息储存,防伪等领域。

GdVO_(4):Yb^(3+),Ho^(3+)和GdPO_(4):Yb^(3+),Ho^(3+)荧光粉的上转换发光特性研究

为了探究Yb^(3+),Ho^(3+)分别共掺杂在GdVO_(4)和GdPO_(4)两种基质材料的发光差异性,采用高温固相法制备GdVO_(4):Yb^(3+),Ho^(3+)和GdPO_(4):Yb^(3+),Ho^(3+)上转换发光材料。并采用X射线衍射仪(X-ray diffraction,XRD)、拉曼光谱(Raman spectroscopy,Raman)、扫描电子显微镜(scanning electron microscopy,SEM)和荧光光谱对材料的结构、组成、形貌和上转换发光性能进行测试分析。结果表明,合成样品均是纯相,GdVO_(4):Yb^(3+),Ho^(3+)样品形状为不规则块状;GdPO_(4):Yb^(3+),Ho^(3+)样品为米粒状。在980 nm激发下,两种样品都存在绿光和红光发射。与掺杂相同浓度的GdVO_(4):Yb^(3+),Ho^(3+)相比,GdPO_(4):Yb^(3+),Ho^(3+)样品的红绿比较大,色度坐标更接近红光,在生物成像领域具有更大的应用潜力。

Fabrication of Gd_(2)O_(3)-doped CeO_(2)thin films through DC reactive sputtering and their application in solid oxide fuel cells

Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.

动态缺陷导致Na_(3)Sc_(2)(PO_(4))_(3):Yb^(3+),Er^(3+)材料上转换和下转移发光不同热猝灭行为研究

掺Eu^(2+)的离子导体Na_(3)Sc_(2)(PO_(4))_(3)具有优异的抗热猝灭性能,是一种很有前景的大功率照明用发光材料。然而,其负热猝灭机理仍有待深入研究。本文以Yb^(3+)/Er^(3+)的f-f跃迁上转换和下转移窄带发射而非更易受干扰的Eu^(2+)d-f跃迁发射为研究对象,旨在获得更清晰的机理。结果表明,热致缺陷/离子的动态迁移能促进高温下辐射跃迁和抑制非辐射跃迁,导致上转换发光具有显著的负热猝灭,下转移发光热猝灭较小。其中,布居速率较慢的上转换过程更容易受到时间尺度与之相当的Na^(+)/空位迁移过程的影响。本研究可为理解发光材料热猝灭机制提供另一种视角。

NaGd(MoO_(4))_(2)∶Er^(3+),Yb^(3+)发光粉的合成与上转换发光性质

采用水热法合成了系列NaGd(MoO_(4))_(2)∶Er^(3+),Yb^(3+)上转换发光粉。利用X射线衍射仪、扫描电子显微镜和上转换发光光谱仪等对样品的结构、形貌和发光性能进行表征。结果显示,合成的样品均具有四方晶系NaGd(MoO_(4))_(2)结构;pH对样品的形貌有影响;980nm红外光激发下,NaGd(MoO_(4))_(2)∶Er^(3+),Yb^(3+)上转换发光粉显示来自于Er^(3+)的^(2)H_(11/2)→^(4)I_(15)和^(4)S_(3/2)→^(4)I_(15/2)跃迁产生的绿光发射和4I 9/2→4I 15/2跃迁产生的红光发射。比较各样品的发光强度和绿光/红光相对积分强度比,结果显示上转换发光强度和绿光/红光相对积分强度比与晶粒尺寸、晶粒表面形貌,以及Er^(3+)和Yb^(3+)掺杂浓度有关。讨论了可能的上转换发光过程,并计算了样品的色坐标。

Yb^(3+)/Nd^(3+)掺杂对Sr_(9)Ga(PO_(4))_(7)∶Cr^(3+)发光性能的影响

近红外荧光粉由于其独特的物理特性和广阔的应用前景吸引了人们极大的研究兴趣。本文通过高温固相反应法合成Sr_(9)Ga(PO_(4))_(7)∶0.8Cr^(3+)近红外荧光粉,使用460 nm蓝光激发样品的发射波长位于833 nm,半峰宽为117 nm。随后引入稀土离子合成Sr_(9)Ga(PO_(4))_(7)∶0.8Cr^(3+),Yb^(3+)和Sr_(9)Ga(PO_(4))_(7)∶0.8Cr^(3+),Nd^(3+)近红外荧光粉。相比Sr_(9)Ga(PO_(4))_(7)∶0.8Cr^(3+),460 nm蓝光激发的Sr_(9)Ga(PO_(4))_(7)∶0.8Cr^(3+),Yb^(3+)同时出现Cr^(3+)和Yb^(3+)特征发射峰,经过光谱分析和荧光寿命变化证明Cr^(3+)-Yb^(3+)存在能量传递通道,最高使Cr^(3+)-Yb^(3+)能量传递效率达80.2%,得益于Yb^(3+)卓越的热稳定性促使整体荧光光谱热稳定性提高约3.7倍。设计合成的Sr_(9)Ga(PO_(4))_7∶0.8Cr^(3+),Nd^(3+)样品调制出833,876,1 060 nm的多峰发射,显著拓宽了近红外光谱范围。最终,讨论了荧光粉在温度传感和无损检测领域的应用,证明该系列荧光粉具有广阔的应用前景。

Y_(2)O_(3):Yb^(3+),Er^(3+)上转化荧光纳米粒子在潜指纹显现中的应用

文章通过高温煅烧方法制备出Y_(2)O_(3):Yb^(3+),Er^(3+)纳米粒子,通过XRD、TEM和元素面扫描对其特性进行研究。通过该方法成功制备出Y_(2)O_(3):Yb^(3+),Er^(3+)纳米粒子,该纳米粒子具有较好的分散性,尺寸约为100 nm。在980 nm近红外光的激发下,产生绿色和红色两个发光带。Y_(2)O_(3):Yb^(3+),Er^(3+)在980 nm近红外光的激发下,可以有效地显现红色纸盒和绿色塑料卡片等带有颜色干扰的非渗透性客体表面的潜指纹,由于激发波长为近红外光,可以完全避免背景荧光的干扰,最大程度上显现指纹的一级和二级结构特征。此外,在与商品红色荧光粉末的比较研究中发现,在有荧光特性的渗透性客体表面的潜指纹显现中,Y_(2)O_(3):Yb^(3+),Er^(3+)纳米粒子具有优势,呈现出更加清晰的指纹轮廓和纹线,可以有效消除背景花纹的干扰,具有较高的灵敏度和选择性。

Upconversion Luminescence Properties of Ho^(3+),Tm^(3+),Yb^(3+) Co-Doped Nanocrystal NaYF_4 Synthesized by Hydrothermal Method

Nanocrystal of upconversion （UC） phosphor Ho^3＋, Tm^3＋ , and Yb^3＋ co-doped NaYF4 was prepared by the hydrothermal method in the presence of the complexing agent EDTA. Under 980 nm diode laser excitation, the impact of different concentrations of Ho^3＋ ion on the UC luminescence intensity was discussed. The law of luminescence intensity versus pump power shows that the 474 nm blue emission, 538 nm green emission, and 642 nm red emission are all due to the two-photon process, while the 450 nm blue emission is a three-photon process. The UC mechanism and processes were also analyzed. The sample was characterized by transmission electron microscopy （TEM） and X-ray diffraction （XRD）. The result shows that Ho^3＋ ,Tm^3＋ , and Yb^3＋ co-doped NaYF4 prepared by the hydrothermal method exhibits a hexagonal nanocrystal.

Optical temperature sensor based on up-conversion fluorescence emission in Yb^(3+):Er^(3+) co-doped ceramics glass

yb^3＋：Er^3＋ co-doped oxy-fluoride ceramics glass has been prepared. The mechanism of up-conversion emissions about Er^3＋ was discussed, and the temperature properties of green up-conversion fluorescence between 303 and 823 K were investigated. The results show that the sensitivity of this sample reaches its maximum value, about 0.0047 K^-1, when the temperature is 383 K, indicating that this kind of sample can be used as high temperature and high sensitivity optical temperature sensor.

Investigation on Preparation and Fluorescence Properties of Oxy-Fluoride Glass Co-Doped with Er^(3+) and Yb^(3+)

The glass sample based on the composition of 45PbF_2-45GeO_2-10WO_3 co-doped with Yb^(3+)/Er^(3+) was prepared by the fusion method in two steps: melted at 950 ℃ for 20～25 min then annealed at 380 ℃ for 4 h. Through the V-prism it is found that the refractive index of host glass and the sample are 1.517 and 1.65 respectively. The transmittance was observed by using the ultraviolet-visible-infrared spectrometer in the wavelength range from 0.35 to 2.5μm. The transmittance of the host glass is beyond 73%. That of the sample is beyond 50% and there are characteristic absorption peaks of rare-earth ions. The emission spectrum was measured by using the Hitachi F-4500 fluorescent spectrometer pumped by 980 nm semiconductor laser. There are a strong emission peak at 530 nm and a weak peak at 650 nm.

Influence of addition of B_2O_3 on properties of Yb^(3+)-doped phosphate laser glass

The three host glasses doped with Yb 3+ were prepared by means of conventional melt quenching technology, and the influence on physical and spectral properties of phosphate glass due to addition of B2O3 was investigated and compared with silicate glass. The results show that due to the existence of OH- impurities which induce the non-radiative route, the fluorescence lifetime of phosphate glass is shorter, so silicate glass has better spectral properties than phosphate glass. Silicate glass has more excellent thermal-mechanical properties than phosphate glass, but with the addition of B2O3, thermal-mechanical properties of phosphate glass are improved greatly without fluorescence quenching effect, and this kind of borophosphate glass will be the candidate to be used in high average power solid state laser.

Laser Cooling Using Anti-Stokes Fluorescence in Yb^(3+)-Doped Fluorozirconate Glasses

The fluorozirconate glasses ZBLANP( ZrF\-4-BaF\-2-LaF\-3-AlF\-3-NaF-PbF\-2) doped with different Yb\+ 3+ concentration were prepared. The Raman spectra and absorption spectra are measured to substantiate the existence of phonon-assisted emission. After analyzing the normalized absorption spectra of samples with different Yb\+ 3+-doped concentration, we calculated the maximum cooling effect in the 3 wt% Yb\+ 3+-doped sample pumped at 1 012.5 nm. The corresponding cooling capability is about -4.09 ℃/W and the cooling efficiency reaches 1.76%.