Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly b...Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum annealing.The threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.展开更多
The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper...The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.展开更多
The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases fr...The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51771144 and 62104189)the Natural Science Foundation of Shaanxi Province,China(Grant Nos.2021JC-06,2019TD-020,and 2019JLM-30)+1 种基金the China Postdoctoral Science Foundation(Grant No.2020M683483)the Fundamental scientific research business expenses of Xi'an Jiaotong University(Grant No.XZY022020017).
文摘Amorphous indium-gallium-zinc oxide(a-IGZO)thin films are prepared by pulsed laser deposition and fabricated into thin-film transistor(TFT)devices.In-situ x-ray photoelectron spectroscopy(XPS)illustrates that weakly bonded oxygen(O)atoms exist in a-IGZO thin films deposited at high O_(2) pressures,but these can be eliminated by vacuum annealing.The threshold voltage(V_(th))of the a-IGZO TFTs is shifted under positive gate bias,and the Vth shift is positively related to the deposition pressure.A temperature variation experiment in the range of 20 K-300 K demonstrates that an activation energy of 144 meV is required for the Vth shift,which is close to the activation energy required for the migration of weakly bonded O atoms in a-IGZO thin films.Accordingly,the Vth shift is attributed to the acceptor-like states induced by the accumulation of weakly bonded O atoms at the a-IGZO/SiO_(2) interface under positive gate bias.These results provide an insight into the mechanism responsible for the Vth shift of the a-IGZO TFTs and help in the production of reliable designs.
基金supported by National Natural Science Foundation of China(60676044,61006057)Electronics Engineering of College of Heilongjiang Province(DZZD20100013)
基金supported by National Natural Science Foundation of China (No. 61404002)the Shenzhen Municipal Scientific Program (No. JCYJ20150626111117384)
文摘The suitability of indium gallium zinc oxide(IGZO) thin-film transistors(TFT) for implementation of active matrix display of organic light emitting diodes(AMOLED) compensation pixel circuits is addressed in this paper. In particular, the impact of mobility on compensating performance for the implementation in AMOLED pixel circuits is investigated. Details of the effective mobility modeling using the power law of gate-to-source voltage are provided, and parameters are extracted according to the measured current-to-voltage data of IGZO TFT samples. The investigated AMOLED pixel circuit consists of 4 switching TFTs, 1 driving TFT, and 1 capacitor. A "source-follower" structure is used for the threshold voltage extraction of the driving transistor. A new timing diagram is proposed; thus the current error of the pixel circuit is almost independent of the effective mobility. But, to improve the precision of the threshold voltage extraction of the driving transistor, the mobility is required to be greater than5 cm^2 V^(-1) s^(-1). On the other hand, the optimized storage capacitance is reversely proportional to the effective mobility. Thus, the layout area of the pixel circuit can be decreased from 100 × 100 to 100 × 68 μm2, with the effective mobility increased from 10 to50 cm^2 V^(-1) s^(-1). Therefore, IGZO TFT is a good alternative backplane technology for AMOLED displays, and a higher effective mobility is preferred for high compensation performance and compact layout.
基金Supported by the National Basic Research Program of China under Grant Nos 2010CB327504,2011CB922100 and2011CB301900the National Natural Science Foundation of China under Grant Nos 11104130 and 61322112+2 种基金the Natural Science Foundation of Jiangsu Province under Grant Nos BK2011556 and BK2011050the Priority Academic Program Development of Jiangsu Higher Education Institutionsand the NUPTSF Grant Nos NY213069 and NY214028
文摘The effect of oxygen partial pressure （Po2） during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide （a-IGZO） thin film transistors （TFTs） is investigated. As Po2 increases from 10% to 30%, it is found that the device shows enhanced bias stress stability with significantly reduced threshold voltage drift under positive gate bias stress. Based on the x-ray photoelectron spectroscopy measurement, the concentration of oxygen vacancies （Or） within the a-IGZO layer is suppressed by increasing Po2. Meanwhile, the low-frequency noise analysis indicates that the average trap density near the channel/dielectric interface continuously drops with increasing Po2. Therefore, the improved interface quality with increasing Po2 during the channel layer deposition can be attributed to the reduction of interface Ov-related defects, which agrees with the enhanced bias stress stability of the a-IGZO TFTs.
