Micro-displacement amplifying mechanism driven by piezoelectric actuator

Piezoelectric actuator has high stiffness, high frequency and infinite control precision, but a short output displacement which is often 1/1 000 of its length. In order to meet the requirements that tools feeding should be long-travel, high-frequency and high-precision in non-circular precision turning, a new one-freedom flexure hinge structure is put forward to amplify the output displacement of piezoelectric actuator. Theoretical analysis is done on the static and dynamic characteristics of the structure, differential equations are presented, and it is also verified by the finite element method. It's proved by experiments that the output displacement of the structure is 293 μm and its resonant frequency is 312 Hz.

Amplifying device created with isotropic dielectric layer

Using the concept of optical transformation, we report on an amplifying device, which can make an arbitrary object enlarged. Its potential application to small object identification and detection is foreseeable. The cylindrical anisotropic amplifying shell could be mimicked by radially symmetrical ＂sectors＂ alternating in composition between two profiles of isotropic dielectrics; the permittivity and permeability in each ＂sector＂ can be properly determined by the effective medium theory. Both the magnetic and nonmagnetic amplifying devices are validated by full-wave finite element simulations. Good amplifying performance is observed.

A numerical simulation of the backward Raman amplifying in plasma

This paper describe a numerical simulation method for the interaction between laser pulses and low density plasmas based on hydrodynamic approximation. We investigate Backward Raman Amplifying （BRA） experiments and their variants. The numerical results are in good agreement with experiments.

Amplification and Compression of Ultrashort Fundamental Solitons in An Erbium-Doped Nonlinear Amplifying Fiber Loop Mirror

A nonlinear amplifying loop mirror constructed from erbium-doped fiber is proposed for simultaneous amplification and compression of ultrashort fundamental solitons. Numerical simulations show that, the proposed device performs efficient high-quality amplification and compression of solitons.

Environmentally stable Er-fiber mode-locked pulse generation and amplification by spectrally filtered and phase-biased nonlinear amplifying long-loop mirror

We report on environmentally stable long-cavity ultrashort erbium-doped fiber lasers,which self-start mode-locking at quite low thresholds by using spectrally filtered and phase-biased nonlinear amplifying long-loop mirrors.By employing 100-m polarization-maintaining fiber(PMF)in the nonlinear loop,the fundamental repetition rate reaches 1.84 MHz and no practical limitation is found to further decrease the repetition rate.The filter used in the long loop not only suppresses Kelly sidebands of the solitons,but also eliminates the amplified spontaneous emission which exists widely in lowrepetition-rate ultrafast fiber lasers.The bandwidth of the filter is optimized by using a numerical model.The laser emits approximately 3-ps pulses with an energy of 17.4 p J,which is further boosted to 1.5μJ by using a fiber amplifier.

Picosecond soliton transmission using concatenated gain-distributed nonlinear amplifying fiber loop mirrors

Stable picosecond soliton transmission is demonstrated numerically by use of concatenated gain-distributed nonlinear amplifying fiber loop mirrors （NALMs）. We show that, as compared with previous soliton transmission schemes that use conventional NALMs or nonlinear optical loop mirror （NOLM） and amplifier combinations, the present scheme permits significant increase of loop-mirror （amplifier） spacing. The broad switching window of the present device and the high quality pulses switched from it provide a reasonable stability range for soliton transmission. Soliton-soliton interactions can be reduced efficiently by using lowly dispersive fibers.

Analysis on the effect of nonlinear polarization evolution in nonlinear amplifying loop mirror

By considering the cross phase modulation （XPM） between the two orthogonal poparization components, the nonlinear birefringence and nonlinear polarization evolution （NPE） in highly-nonlinear fiber （HNLF）, as well as the unequal evolutions of the state of polarization （SOP） between the clockwise （CW） and counter-clockwise （CCW） waves in a nonlinear amplifying loop mirror （NALM） are analyzed. It is pointed out that the traditional cosine expression is no longer valid for the power transmission of NALM due to uncompleted interference under the high power condition. The analytical expression considering NPE effect is derived, and the experimental result is presented.

Amplifying Orbital Angular Momentum Modes in Ring-Core Erbium-Doped Fiber

Lots of research efforts have been devoted to increase the transmission capacity in optical communications using orbital angular momentum(OAM)multiplexing.To enable long-haul OAM mode transmission,an in-line OAM fiber amplifier is desired.A ring-core fiber(RCF)is considered to be a preferable design for stable OAM mode propagation in the fiber.Here,we demonstrate an OAM fiber amplifier based on a fabricated ring-core erbium-doped fiber(RC-EDF).We characterize the performance of the RC-EDF-assisted OAM fiber amplifier and demonstrate its use in OAM multiplexing communications with OAM modes carrying quadrature phase-shift keying(QPSK)and quadrature amplitude modulation(QAM)signals.The amplification of two OAM modes over four wavelengths is demonstrated in a data-carrying OAM-division multiplexing and wavelength-division multiplexing system.The obtained results show favorable performance of the RC-EDF-assisted OAM fiber amplifier.These demonstrations may open up new perspectives for long-haul transmission in capacity scaling fiber-optic communications employing OAM modes.

Enhanced 1.32 μm fluorescence and broadband amplifying for O-band optical amplifier in Nd^(3＋)-doped tellurite glass

WO_3 oxides with relatively high phonon energy and different concentrations were introduced into the Nd^(3+)-doped tellurite-based glasses of Te O_2-Zn O-Na_2 O to improve the 1.32 μm band fluorescence emission. The absorption spectra,Raman spectra,1.32 μm band fluorescence spectra and differential scanning calorimeter(DSC) curves were measured,together with the Judd-Ofelt intensity parameters,stimulated emission and gain parameters were calculated to evaluate the effects of WO_3 amount on the glass structure and spectroscopic properties of 1.32 μm band fluorescence. It is shown that the introduction of an appropriate amount of WO_3 oxide can effectively improve the 1.32 μm band fluorescence intensity through the enhanced multi-phonon relaxation(MPR) processes between the excited levels of Nd^(3+). The results indicate that the prepared Nd^(3+)-doped tellurite glass with an appropriate amount of WO_3 oxide is a potential gain medium applied for the O-band broad and high-gain fiber amplifier.

基于SCAR标记和DNA条形码技术的苍术基原鉴别研究

目的开发出能同时鉴别北苍术和关苍术的分子标记方法,并探究不同种质资源苍术的遗传进化关系。方法对不同地区北苍术Atractylodes chinensis(Bunge)Koidz及关苍术A.japonica Koidz.ex Kitam基因组DNA的差异片段进行测序,结合SRAP、ISSR、DAMD分子标记方法,优化PCR反应体系,筛选并转换成特异性标记,同时,采用条形码方法分析种间序列差异。结果通过SRAP、ISSR、DAMD三种分子标记方法的PCR扩增,共筛选出198对能稳定扩增且重现性好的引物,转换出7对能稳定、快速鉴别北苍术和关苍术的SCAR引物。条形码方法检测出北苍术ITS2序列长度为454 bp,关苍术ITS2序列长度为453 bp,与其他苍术属植物之间遗传距离较远。NJ树结果显示,北苍术、关苍术及其他苍术属植物均各自聚为一支,表现出良好的单系性。依据ITS2二级结构,4种苍术属植物在螺旋区的茎环数目、大小、位置均有明显差异,可以直观地进行区分。结论所开发的特异性SCAR标记为苍术属植物优良品种的筛选提供了新方法,DNA条形码能稳定、准确鉴别北苍术。

A 24−30 GHz 8-element dual-polarized 5G FR2 phased-array transceiver IC with 20.8-dBm TX OP1dB and 4.1-dB RX NF in 65-nm CMOS

This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.

Broadband Dual-Input Doherty Power Amplifier Design Based on a Simple Adaptive Power Dividing Ratio Function

In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.

High-Power Raman Soliton Generation at 1.7 μm in All-Fiber Polarization-Maintaining Erbium-Doped Amplifier

An all-fiber polarization maintaining high-power laser system operating at 1.7 μm based on the Ramaninduced soliton self-frequency shifting effect is demonstrated. The entirely fiberized system is built by erbiumdoped oscillator and two-stage amplifiers with polarization maintaining commercial silica fibers and devices, which can provide robust and stable soliton generation. High-power soliton laser with the average power of 0.28 W,the repetition rate of 42.7 MHz, and pulse duration of 515 fs is generated directly from the main amplifier.Our experiment provides a feasible method for high-power all-fiber polarization maintaining femtosecond laser generation working at 1.7 μm.

An advanced theoretical approach to study super-multiperiod superlattices:theory vs experiments

A new theoretical method to study super-multiperiod superlattices has been developed.The method combines the precision of the 8-band kp-method with the flexibility of the shooting method and the Monte Carlo approach.This method was applied to examine the finest quality samples of super-multiperiod Al_(0.3)Ga_(0.7)As/GaAs superlattices grown by molecular beam epitaxy.The express photoreflectance spectroscopy method was utilized to validate the proposed theoretical method.For the first time,the accurate theoretical analysis of the energy band diagram of super-multiperiod superlattices with experimental verification has been conducted.The proposed approach highly accurately determines transition peak positions and enables the calculation of the energy band diagram,transition energies,relaxation rates,and gain estimation.It has achieved a remarkably low 5%error compared to the commonly used method,which typically results in a 25%error,and allowed to recover the superlattice parameters.The retrieved intrinsic parameters of the samples aligned with XRD data and growth parameters.The proposed method also accurately predicted the escape of the second energy level for quantum well thicknesses less than 5 nm,as was observed in photoreflectance experiments.The new designs of THz light-emitting devices operating at room temperature were suggested by the developed method.

A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application

In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabricated using the gallium arsenide(GaAs)integrated passive device(IPD)process,is proposed for 5G massive multiple-input multiple-output(MIMO)application.An inverted DPA structure with a low-Q output network is proposed to achieve better bandwidth performance,and a single-driver architecture is adopted for a chip with high gain and small area.The proposed DPA has a bandwidth of 4.4-5.0 GHz that can achieve a saturation of more than 45.0 dBm.The gain compression from 37 dBm to saturation power is less than 4 dB,and the average power-added efficiency(PAE)is 36.3%with an 8.5 dB peak-to-average power ratio(PAPR)in 4.5-5.0 GHz.The measured adjacent channel power ratio(ACPR)is better than50 dBc after digital predistortion(DPD),exhibiting satisfactory linearity.

Nonlinear Absorption and Low-threshold Two-photon Pumped Amplified Stimulated Emission from FAPbBr_(3) Nanocrystals

Formamidinium lead bromide(FAPbBr_(3))nanocrystals(NCs)have been considered to be a good optoelectronic material due to their pure green emission,excellent stability and superior carrier transport characteristics.However,two-photon pumped amplified spontaneous emission(ASE)and the corresponding nonlinear optical properties of FAPbBr_(3) NCs are scarcely revealed.Herein,we synthesized colloidal FAPbBr_(3) NCs with different sizes by changing the molar ratio of FABr/PbBr_(2) in the precursor solution,using ligand assisted precipitation(LARP)technology at room temperature.Photoluminescence(PL)and time resolved photoluminescence(TRPL)spectroscopy were measured to characterize their ASE properties.And their nonlinear optical properties were studied through the Zscan technique and the two-photon excited fluorescence method.The stimulated emission properties including oneand two-photon pumped ASE have been realized from FAPbBr_(3) NCs.With large two-photon absorption coefficient(0.27 cm/GW)and high non-linear absorption cross-section(7.52×10^(5) GM),ASE with threshold as low as 9.8μJ/cm^(2) and 487μJ/cm^(2) have been obtained from colloidal FAPbBr_(3) NCs using one-and two-photon excitations.These results indicate that as a new possible green-emitting frequency-upconversion material with low thresholds,FAPbBr_(3) NCs hold great potential in the development of high-performance two-photon pump lasers.

Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier

A Josephson traveling wave parametric amplifier(JTWPA),which is a quantum-limited amplifier with high gain and large bandwidth,is the core device of large-scale measurement and control systems for quantum computing.A typical JTWPA consists of thousands of Josephson junctions connected in series to form a transmission line and hundreds of shunt LC resonators periodically loaded along the line for phase matching.Because the variation of these capacitors and inductors can be detrimental to their high-frequency characteristics,the fabrication of a JTWPA typically necessitates precise processing equipment.To guide the fabrication process and further improve the design for manufacturability,it is necessary to understand how each electronic component affects the amplifier.In this paper,we use the harmonic balance method to conduct a comprehensive study on the impact of nonuniformity and fabrication yield of the electronic components on the performance of a JTWPA.The results provide insightful and scientific guidance for device design and fabrication processes.

Channel estimation in integrated radar and communication systems with power amplifier distortion

To reduce the negative impact of the power amplifier(PA)nonlinear distortion caused by the orthogonal frequency division multiplexing(OFDM)waveform with high peak-to-average power ratio(PAPR)in integrated radar and communication(RadCom)systems is studied,the channel estimation in passive sensing scenarios.Adaptive channel estimation methods are proposed based on different pilot patterns,considering nonlinear distortion and channel sparsity.The proposed methods achieve sparse channel results by manipulating the least squares(LS)frequency-domain channel estimation results to preserve the most significant taps.The decision-aided method is used to optimize the sparse channel results to reduce the effect of nonlinear distortion.Numerical results show that the channel estimation performance of the proposed methods is better than that of the conventional methods under different pilot patterns.In addition,the bit error rate performance in communication and passive radar detection performance show that the proposed methods have good comprehensive performance.

Three-channel CMOS transimpedance amplifier for LiDAR sensor receiver

For time-of-flight(TOF)light detection and ranging(LiDAR),a three-channel high-performance transimpedance amplifier(TIA)with high immunity to input load capacitance is presented.A regulated cascade(RGC)as the input stage is at the core of the complementary metal oxide semiconductor(CMOS)circuit chip,giving it more immunity to input photodiode detectors.A simple smart output interface acting as a feedback structure,which is rarely found in other designs,reduces the chip size and power consumption simultaneously.The circuit is designed using a 0.5μm CMOS process technology to achieve low cost.The device delivers a 33.87 dB?transimpedance gain at 350 MHz.With a higher input load capacitance,it shows a-3 dB bandwidth of 461 MHz,indicating a better detector tolerance at the front end of the system.Under a 3.3 V supply voltage,the device consumes 5.2 mW,and the total chip area with three channels is 402.8×597.0μm2(including the test pads).