Dielectric loss enhancement induced by the microstructure of CoFe_(2)O_(4) foam to realize broadband electromagnetic wave absorption

CoFe_(2)O_(4)has been widely used for electromagnetic wave absorption owing to its high Snoek limit,high anisotropy,and suitable saturation magnetization;however,its inherent shortcomings,including low dielectric loss,high density,and magnetic agglomeration,limit its application as an ideal absorbent.This study investigated a microstructure regulation strategy to mitigate the inherent disadvantages of pristine CoFe_(2)O_(4)synthesized via a sol–gel auto-combustion method.A series of CoFe_(2)O_(4)foams(S0.5,S1.0,and S1.5,corresponding to foams with citric acid(CA)-to-Fe(NO_(3))_(3)·9H_(2)O molar ratios of 0.5,1.0,and 1.5,respectively)with two-dimensional(2D)curved surfaces were obtained through the adjustment of CA-to-Fe^(3+)ratio,and the electromagnetic parameters were adjusted through morphology regulation.Owing to the appropriate impedance matching and conductance loss provided by moderate complex permittivity,the effective absorption bandwidth(EAB)of S0.5 was as high as 7.3 GHz,exceeding those of most CoFe_(2)O_(4)-based absorbents.Moreover,the EAB of S1.5 reached 5.0 GHz(8.9–13.9 GHz),covering most of the X band,owing to the intense polarization provided by lattice defects and the heterogeneous interface.The three-dimensional(3D)foam structure circumvented the high density and magnetic agglomeration issues of CoFe_(2)O_(4)nanoparticles,and the good conductivity of 2D curved surfaces could effectively elevate the complex permittivity to ameliorate the dielectric loss of pure CoFe_(2)O_(4).This study provides a novel idea for the theoretical design and practical production of lightweight and broadband pure ferrites.

Small Rb^+ Doping in CaCu_3Ti_4O_(12)——A Possible Approach to Reduce Dielectric Loss

Ca1-xRbxCu3Ti4O12 （x=0, 0.01, 0.02 and 0.03） ceramics were synthesized by the sol-gel method. Doping Rb＋ reduces dielectric loss, which reaches minimum when x=0.02. By measuring properties of electrical conduction, larger leakage current density and height of grain-boundary Sehottky potential barrier （φB） were found in the doped samples, and φB became maximum when x=0.02. These results are attributed to the increase in the amount of oxygen vacancies and the formation of Cu-rich/Ti-poor grain-boundary layers, and it can be concluded that the dielectric loss in CCTO ceramic can be reduced by manipulating the composition and electrical properties of grain boundary.

Dielectric loss of half-doped manganite La_(0.5)Ca_(0.5)MnO_3

The dielectric loss tanfi of half-doped manganite Lao.sCao.sMnO3 is investigated using Green＇s function technique. The Lao.sCao.sMnO3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn- Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tans decreases with increasing [e]TI, V, and U. It is also observed that the transition temperature Tp rises as l eJTI and U increase. It is worth noting that Tp remains unchanged and the strength of tans increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.

Test and analysis of the influence of the transformer insulation resistance and dielectric loss

In view of long-term transformer insulation resistance and dielectric loss measurement, measurement and according to the national standard formula conversion values are not completely consistent, in this paper, a variety of transformers are studied, and the applicable scope of the conversion formula is discussed emphatically, combined with the test results are analyzed of transformer insulation resistance value to temperature and oiliness and dielectric loss tangent to temperature and oiliness, and puts forward suggestions on how to improve the insulation performance of transformer.

Evolution of dielectric loss-dominated electromagnetic patterns in magnetic absorbers for enhanced microwave absorption performances

As the growing criterion of electromagnetic wave (EMW) absorption materials, micro/nano-scale magnetic materials are drawing more and more attention for their unique features compared to bulky absorbers. Generally, the complex permeability of micro/nano-scale magnetic absorbers varies in a relatively narrow range, whatever for the storage of magnetic energy or the dissipation of magnetic energy. If so, how the small variation of permeability affects the ultimate performances is still unclear. Here, a strategy of electromagnetic parameters regulation for the magnetic materials is applied to understand the loss contribution in micro/nanoscale magnetic absorbers. After analyzing the evolution of electromagnetic maps of ten ferrosoferric oxide samples, it can be found that the dissipation contribution of permeability for magnetic materials is weaker than that of permittivity, in spite of its significant role in determining the impedance matching characteristics. In summary, this work systematically explores the loss contribution in micro/nano-magnetic absorbers for the first time, which is of great importance in designing and optimizing the microwave absorption properties of magnetic absorbers.

Design and synthesis of liquid crystal copolyesters with high-frequency low dielectric loss and inherent flame retardancy

Ultra-low dielectric loss(Df)and low dielectric constant(Dk)materials are urgently required in highspeed and large-capacity transmission,in which the wholly aromatic liquid crystal polymer(LCP)has gained attention due to its excellent dielectric properties.However,the relationship between molecular structure and dielectric properties is still not clear.In this study,two copolyesters containing phenyl or naphthyl structures are synthesized,as well as the effects of benzene and naphthalene mesogens on dielectric properties are investigated.The synthesized copolyesters containing naphthalene structure have good comprehensive properties with high thermal stability(T_(5%)=479℃ and T_g=195-216℃),inherent flame retardance(LOI=33.0-35.0 and UL-94 V-0 level at 0.8 mm),low Dk(2.9-3.0@10 GHz)and low Df(0.0027-0.0047@10 GHz).Naphthalene mesogen can reduce the dielectric loss more significantly than benzene at high frequency by reducing the density and mobility of polarizable groups,which leads to the effectively limited dipole polarization in copolyesters.Consequently,we proposed a new strategy for designing low Dk and low Df materials.

Super-stable permittivity and low dielectric loss of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)ceramics within an ultra-wide temperature range

This work designs a new system(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)with a nonstoichiometric bismuth ratio,which is used as dielectrics of ceramics capacitors.Phase structure evolution of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)is characterized using XRD,Raman and TEM.Dielectric and resistant properties of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)are investigated with increasing concentration of NaTaO_(3).With these in-vestigations,the structure and defect chemistry of(1-x)Na_(0.5)Bi_(0.5+y)TiO_(3-x)NaTaO_(3)are rationalized and their respective impact on capacitor properties are elucidated.The optimized composition 0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)possesses an ultra-wide operating temperature range(-92e398C),in which both stable permittivity and low dielectric loss is obtained.Furthermore,the fabrication of multilayer ceramics capacitors(MLCC)based on 0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)dielectrics is investigated.With the addition of sintering aids,0.8Na_(0.5)Bi_(0.51)TiO_(3)-0.2NaTaO_(3)could be co-fired with Ag at 910℃in air,and the low temperature co-fired ceramic(LTCC)capacitors maintain good temperature stability of permittivity and low dielectric loss in-100-352℃.Therefore,our work provides a new route for pre-paring ultra-wide operating temperature capacitors at low manufacturing costs.

Frequency dispersion investigation of output reactance and capacitance in GaAs MESFETs by means of dielectric loss tangent consideration

The aim of this article is to investigate the effect of dielectric loss tangent on frequency dispersion of output reactance and capacitance in GaAs MESFETs.For this purpose,measurements of output impedance modulus and phase have been carried out within a frequency range of 10 Hz to 10 kHz,and various voltage values of gatesource（Vgs= 0,-0.2,-0.3,-0.35,-0.4,-0.45,-0.5 and-0.6 V） and drain-source（Vds= 0.7,0.9,1,1.5and 2 V） Based on the concept of complex permittivity of semiconductor material,complex capacitance is used to analyze and simulate frequency dispersion of output reactance and capacitance of GaAs MESFETs.The results show that conductor losses which dominate the dielectric loss tangent are attributed to trapping mechanisms at the interface of devices;so they influence the frequency dispersion of output reactance and capacitance in particular at low frequencies.This reveals that frequency dispersion of these parameters is also related to dielectric loss tangent of semiconductor materials which affects the response of electronic devices according to frequency variation.

Colossal permittivity and ultralow dielectric loss in Nb-doped SrTiO_(3) ceramics

Defect engineering has been applied to prepare materials with modifiable dielectric properties.SrTiNbxO3(x=0,0.003,0.006,0.009,0.012)ceramics were synthesized using the traditional solid-state reaction method and sintered in a reducing atmosphere.All samples show excellent dielectric properties with giant permittivity(>3.5×10^(4))and low dielectric loss(<0.01).SrTiNb0.003O3 ceramic exhibits a colossal permittivity of 4.6×10^(4)and an ultralow dielectric loss of 0.005(1 kHz,room temperature)as well as great temperature stability in the range of(−60)–160℃.The mechanism of the presented colossal permittivity(CP)properties is investigated by conducting X-ray photoelectron spectroscopy(XPS)and analyzing activation energies.The results indicate that the introduction of Nb5+and the reducing sintering atmosphere together generated the formation of Ti^(3+)and V_(O)^(**).These defects further form Ti-V_(O)^(**)-Ti'_(Ti)defect dipoles,contributing to the coexisting giant permittivity and low dielectric loss in Nb-doped SrTiO_(3)(STN)ceramics.

Effect of Cu ion substitution on structural and dielectric properties of Ni-Zn ferrites

A series of Cu-substituted Ni_(0.5-x)Cu_xZn_(0.5)Fe_2O_4(x=0.12,0.16,0.20,0.24 and 0.28) spinel ferrites were prepared by conventional ceramic method to investigate the effects of Cu compositional variation on the structure and dielectric properties.XRD patterns demonstrate that all the samples are crystallized in single-phase cubic spinel structure and the lattice constant increases with increasing Cu content.White grains observed by SEM are Cu-rich phase.The dielectric constant versus frequency curve displays a normal dielectric behavior of spinel ferrites.While the frequency dependence of dielectric loss tangent is found to be abnormal,exhibiting a peak at certain frequency for all Cu-substituted Ni-Zn ferrites.A maximum of the resistivity is observed at x=0.2 due to the decrease of hopping electrons between Fe^(2+) and Fe^(3+) in per unit volume,which is in contrast with the Cu content dependence of dielectric constant and dielectric loss.

Dielectric properties of spark plasma sintered AlN/SiC composite ceramics

In this study, we have investigated how the dielectric loss tangent and permittivity of AlN ceramics are affected by factors such as powder mixing methods, milling time, sintering temperature, and the addition of a second conductive phase. All ceramic samples were pre-pared by spark plasma sintering （SPS） under a pressure of 30 MPa. AlN composite ceramics sintered with 30wt%-40wt%SiC at 1600℃ for 5 min exhibited the best dielectric loss tangent, which is greater than 0.3. In addition to AlN and β-SiC, the samples also contained 2H-SiC and Fe5Si3, as detected by X-ray difraction （XRD）. The relative densities of the sintered ceramics were higher than 93%. Experimental results indicate that nano-SiC has a strong capability of absorbing electromagnetic waves. The dielectric constant and dielectric loss of AlN-SiC ce-ramics with the same content of SiC decreased as the frequency of electromagnetic waves increased from 1 kHz to 1 MHz.

The Influence of Free Water Content on Dielectric Properties of Alkali Active Slag Cement Paste

The dielectric performance of alkali activated slag （AAS） cement paste was investigated in the frequency range of 1 to 1000 MHz. The experimental results showed the unstable dielectric properties of harden paste were mostly influenced by the fraction of free water in paste or absorbed water from ambient, but not including hydration water and microstructure. The free water was completely eliminated by heat treatment at 105 ℃ about 4 hours, and then its dielectric loss was depressed; but with the exposure time in air increasing, the free water adsorption in ambient air made the dielectric property of harden cement paste to be bad. The temperature and relative humidity of environment was the key factors of free water adsorption; hence, if the influence of free water on dielectric constant was measured or eliminated, the cement-based materials may be applied in humidity sensitive materials or dielectric materials domains.

Identification of the Intrinsic Dielectric Properties of Metal Single Atoms for Electromagnetic Wave Absorption

Atomically dispersed metals on N-doped carbon supports(M-N_(xCs)) have great potential applications in various fields.However,a precise understanding of the definitive relationship between the configuration of metal single atoms and the dielectric loss properties of M-N_(xCs) at the atomic-level is still lacking.Herein,we report a general approach to synthesize a series of three-dimensional(3D)honeycomb-like M-N_xC(M=Mn,Fe,Co,Cu,or Ni) containing metal single atoms.Experimental results indicate that 3D M-N_(xCs) exhibit a greatly enhanced dielectric loss compared with that of the NC matrix.Theoretical calculations demonstrate that the density of states of the d orbitals near the Fermi level is significantly increased and additional electrical dipoles are induced due to the destruction of the symmetry of the local microstructure,which enhances conductive loss and dipolar polarization loss of 3D M-N_(xCs),respectively.Consequently,these 3D M-N_(xCs) exhibit excellent electromagnetic wave absorption properties,outperforming the most commonly reported absorbers.This study systematically explains the mechanism of dielectric loss at the atomic level for the first time and is of significance to the rational design of high-efficiency electromagnetic wave absorbing materials containing metal single atoms.

Effect of Gadolinium Substitution on Dielectric Properties of Bismuth Ferrite

Multiferroic Bi1-xGdxFeO3(x =0, 0.05, 0.1, 0.15, 0.2) ceramics were prepared by conventional solid state reaction method. X-ray diffraction was carried out to characterize the crystal structure and to detect any possible impurities existing in these ceramics. Frequency dependence of dielectric properties of Bi1-xGdxFeO3 samples at room temperature was measured in a frequency range from 100 Hz to 1 MHz using an HP4294A precision impedance analyzer. For all the samples studied, the dielectric constant and dielectric loss decreases with increasing frequency in the range between 100 Hz and 1 MHz, as can be expected from a typical orientational dielectric relaxation process. There is no indication of any dips over the whole frequency range studied, which is in direct contrast with that reported previously. It is found that both dielectric constant and dielectric loss are strongly dependent on the Gd3+ content. The effect of introducing Gd3+ is to increase the dielectric constant and to decrease the dielectric loss for slightly doped sample Bi0.95Gd0.05FeO3: the dielectric constant of the sample at 1 kHz reaches 600, six times bigger than that for pure BiFeO3. Complicated dielectric behaviors are observed at higher doping levels. Furthermore, the substitution of rare earth Gd for Bi helps to eliminate the impurity phase in BiFeO3 ceramics. There is strong evidence that both lattice constants a and c of the unit cell become smaller as the Gd3 + content is increased. The dielectric constant and loss and their frequency responses can be varied dramatically by substitution of Gd.

Study on Ba_(6-3x)Sm_(8+2x)Ti_(18)O_(54) Microwave Dielectric Ceramics

The effects of different x values on the dielectric properties in the Ba6-3xSm8+2xTi18O54 microwave dielectric ceramics(0.3≤x≤0.7) were studied. The results showed that the major crystal phase was BaSm2Ti4O12 and the sintering temperature of the ceramics was 1340 ℃ when the x value was 0.67. The dielectric properties were better: εr≈79, tanδ≈1×10-4(1 MHz); εr≈80, Q·f=9230 GHz(3.97 GHz), τf=-17 ppm·℃-1.

Dielectric Properties of Fe73.5-Cu1-Ta3-Si13.5-B9 Magnetic Alloy

The studied sample is a metallic glass in Fe-Si-B system. It is developed with the nominal composition of Fe735-Cu1-Ta3-Si13.5-B9 by single-roller melt spinning technique in air. The dielectric constant and loss factor have been measured both for as cast and annealed samples using Agilent Impedance analyzer. They are found to decrease with frequency up to 10 MHz and remain constant afterwards. The decrease of dielectric constant and loss factor with frequency is due to ceasing of orientational polarizability. Their constancy is owing to presence of only electronic contribution to its polarizability above 10 MHz. Three distinct regions （1-4 MHz, 4-10 MHz and 10 MHz-1 GHz） also noticed from its frequency dependence, which might make it useful in switching and sensor devices. The temperature dependence of dielectric constant and loss factor maintain inverse relationship： （1） dielectric constant increases, and （2） loss factor decreases with annealing temperature for structural relaxation due to thermal agitation.

Comprehensive studies on dielectric properties of p-methoxy benzylidene p-decyl aniline with function of temperature and frequency in planar geometry: A potential nematic liquid crystal for display devices

The dielectric properties of the nematic mesophase, p-methoxy benzylidene p-decyl aniline(MBDA), measured in planar geometry with a function of frequency and temperature are investigated in detail. The complex dielectric permittivity(ε' and ε'') is also studied at a bias voltage of 10 V for planar aligned sample cell of nematic mesophase. The dielectric permittivity with bias voltage attains a higher(> 2 times) value than that without bias voltage at a temperature of 56℃,which is due to the fact that the linking group of nematic molecules is internally interacted with an applied bias voltage.This is supported by observing an enhanced dielectric permittivity of nematic liquid crystal(LC) in the presence of bias voltage, which can be fully explained as the increasing of the corresponding dipole moment. The dielectric relaxation behaviors of nematic LC are also demonstrated for planar aligned sample cell. The remarkable results are observed that the relaxation frequency shifts into low frequency region with the increase of the bias voltage applied to the planar aligned sample cells. The dielectric relaxation spectra are fitted by Cole–Cole nonlinear curve fitting for nematic mesophase in order to determine the dielectric strength.

Comparative Study of Dielectric and Magnetic Properties of Selected 3D Reticulated Ceramics and Their Same Composition Ceramic Disks

3-dimensional reticulated ceramics (3DRCs) and their same composition ceramic disks(SCCDs) were fabricated by sol-gel method, with the composition of SrO-6Fe203(30%), SiC(35%) and Ti02(35%), sintered at 1200C in N2. The dielectric and magnetic parameters of such 3DRCs and their SCCDs were measured respectively in a temperature range from room temperature to 800癈 and in a frequency range from 2.6 GHz to 18 GHz. The results showed that the dielectric and magnetic loss of 3DRCs were obviously larger than those of their SCCDs in a wide range of temperature and the whole range of measuring frequency. The increase of dielectric loss of SDRCs was much higher than that of magnetic loss compared to their SCCDs, which was found due to the 3D net structure extrinsic characteristics.

Temperature-frequency dependence and mechanism of dielectric properties for γ-Y_2Si_2O_7

This paper reports that single-phase γ-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of γ-Y2Si2O7 as a function of the temperature and frequency. The γ-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400℃ in the range of 7.3 18 GHz. The mechanism for polarization relaxation of the as-prepared γ-Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

Dielectric Properties of Nanocrystalline TiO_(2) Prepared by the Stearic Acid Gel Method

Nanocrystalline TiO 2 was prepared by means of a stearic acid gel method. The product was investigated by differential thermal analysis, thermogravimetric analysis, X-ray powder diffraction and transmission electronic microscopy(TEM). The results of the dielectric properties tested indicate that the dielectric constant of anatase-form nanocrystalline TiO 2 is much higher than that of the coarse crystal. The dielectric constant of the nanocrystalline material is not related with the amplitude of an external AC field in a certain range.