With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of Si...With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.展开更多
A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track driv...A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track drive-mode resonant frequency and reduce frequency jitter of actuation voltage,a PLL-based driving technique is adopted. Implemented on printed circuit board( PCB),the proposed driving loop has successfully excited MEMS element into resonance,with a settling time of 3 s. The stable frequency and amplitude of TIA output voltage are 10.14 KHz and 800 mVPP,respectively. With sense-channel electronics,the gyroscope exhibits a scale factor of 0.04 mV/°/s and a bias instability of 57.6°/h,which demonstrates the feasibility of the proposed driving circuit.展开更多
The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power so...The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.展开更多
Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improv...Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.展开更多
The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are de...The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are designed.The practical results show that the circuit is good in performance.展开更多
基金the phased achievements of the postgraduate practice innovation project(SJCX22_1479)in Jiangsu Province.
文摘With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.
基金supported by the National Natural Science Foundation of China (grant: 61234007)the subproject of the Very Large Scale Integrated Circuits Manufacturing Equipment and Complete Technology (No.2 National Major Projects of China) (No.: 2013ZX02502-001)
文摘A novel phase-locked loop( PLL)-based closed-loop driving circuit with ultra-low-noise trans-impedance amplifier( TIA) is proposed. The TIA is optimized to achieve ultra-low input-referred current noise. To track drive-mode resonant frequency and reduce frequency jitter of actuation voltage,a PLL-based driving technique is adopted. Implemented on printed circuit board( PCB),the proposed driving loop has successfully excited MEMS element into resonance,with a settling time of 3 s. The stable frequency and amplitude of TIA output voltage are 10.14 KHz and 800 mVPP,respectively. With sense-channel electronics,the gyroscope exhibits a scale factor of 0.04 mV/°/s and a bias instability of 57.6°/h,which demonstrates the feasibility of the proposed driving circuit.
文摘The insulated gate bipolar transistor(IGBT) has become the most popular controllable power switching device in the design of power electronics industry.As the interface of power circuit and control circuit in power source, the IGBT drive circuit should be with short transition time and the function of isolating safely and monitoring correctly the short-circuit and over-voltage fault.This paper presents the short-circuit protection theory and relative parameter selecting rules,based on the research on 2QD30A17K-I,the representative of high voltage and high power driver.
基金supported by the National Natural Science Foundation of China(No.60876023).
文摘Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.
文摘The essential requirements of IGBT drive circuit is expounded.The short-circuit characteristic and over-current protection of the IGBT are described in detail.Finally,the practical drive and protection circuits are designed.The practical results show that the circuit is good in performance.
文摘为解决当前常用煤矿氧气检测仪器易受交叉气体干扰且功耗大的问题,基于GD32F303RCT6微控制器和ADN8834热电冷却控制器,设计了一种软启动开关电路控制的垂直腔面发射激光器(Vertical-cavity Surface-emitting Laser,VCSEL)高精度驱动及温控电路。驱动电路中,高频正弦波信号和低频锯齿波信号叠加的二进制数据由微控制器产生,经信号发生电路、电压电流转换电路转化成VCSEL高精度驱动电流信号;温控电路中,设计基于比例积分微分(Proportional Integral Differential,PID)补偿电路和数模转换控制器(Digital to Analog Converter,DAC)目标温度控制电路实现激光器温度自动调节。测试结果表明:驱动电路的电流输出区间为0.680~1.360 mA;锯齿波频率误差小于0.5%,正弦波频率误差小于0.1%;氧气吸收峰扫描精度高达0.07 pm,对应电流扫描精度为0.12μA;温控电路的温度控制精度为±0.012℃。满足了可调谐半导体激光吸收光谱(Tunable Diode Laser Absorption Spectroscopy,TDLAS)煤矿氧气检测应用需求。
