Fluorescence tomography can obtain a sufficient dataset and optimal three-dimensional imageswhen projections are captured over 360◦ by CCD camera. Herein a non-stop dynamic samplingmode for fluorescence tomography is ...Fluorescence tomography can obtain a sufficient dataset and optimal three-dimensional imageswhen projections are captured over 360◦ by CCD camera. Herein a non-stop dynamic samplingmode for fluorescence tomography is proposed in an attempt to improve the optical measurementspeed of the traditional imaging system and stability of the object to be imaged. A series ofsimulations are carried out to evaluate the accuracy of dataset acquired from the dynamicsampling mode. Reconstruction with the corresponding data obtained in the dynamic-modeprocess is also performed with the phantom. The results demonstrate the feasibility of suchan imaging mode when the angular velocity is set to the appropriate value, thus laying thefoundation for real experiments to verify the superiority in performance of this new imagingmode over the traditional one.展开更多
A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 4...A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.展开更多
In this paper, we investigated the influence of sample temperature on the expansion dynamics and the optical emission spectroscopy of laser-induced plasma, and Ge was selected as the test sample. The target was heated...In this paper, we investigated the influence of sample temperature on the expansion dynamics and the optical emission spectroscopy of laser-induced plasma, and Ge was selected as the test sample. The target was heated from room temperature（22 °C） to 300 °C, and excited in atmospheric environment by using a Q-Switched Nd：YAG pulse laser with the wavelength of 1064 nm. To study the plasma expansion dynamics, we observed the plasma plume at different laser energies（5.0, 7.4 and 9.4 mJ）and different sample temperatures by using time-resolved image. We found that the heated target temperature could accelerate the expansion of plasma plume. Moreover, we also measured the effect of target temperature on the optical emission spectroscopy and signal-to-noise ratio.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
文摘Fluorescence tomography can obtain a sufficient dataset and optimal three-dimensional imageswhen projections are captured over 360◦ by CCD camera. Herein a non-stop dynamic samplingmode for fluorescence tomography is proposed in an attempt to improve the optical measurementspeed of the traditional imaging system and stability of the object to be imaged. A series ofsimulations are carried out to evaluate the accuracy of dataset acquired from the dynamicsampling mode. Reconstruction with the corresponding data obtained in the dynamic-modeprocess is also performed with the phantom. The results demonstrate the feasibility of suchan imaging mode when the angular velocity is set to the appropriate value, thus laying thefoundation for real experiments to verify the superiority in performance of this new imagingmode over the traditional one.
文摘A single CMOS image sensor based on a 0.35μm process along with its design and implementation is introduced. The architecture of an active pixel sensor is used in the chip. The fill factor of a pixel cell can reach 43%,higher than the traditional factor of 30%. Moreover, compared with the conventional method whose fixed pattern noise （FPN） is around 0.5%, a dynamic digital double sampling technique is developed, which possesses simpler circuit architecture and a better FPN suppression outcome. The CMOS image sensor chip is implemented in the 0.35μm mixed signal process of a Chartered by MPW. The experimental results show that the chip operates welt,with an FPN of about 0.17%.
基金support by National Natural Science Foundation of China(Grant Nos.11674128,11504129,and 11474129)Jilin Province Scientific and Technological Development Program,China(Grant No.20170101063JC)the Thirteenth Five-Year Scientific and Technological Research Project of the Education Department of Jilin Province,China(2016,No.400)
文摘In this paper, we investigated the influence of sample temperature on the expansion dynamics and the optical emission spectroscopy of laser-induced plasma, and Ge was selected as the test sample. The target was heated from room temperature（22 °C） to 300 °C, and excited in atmospheric environment by using a Q-Switched Nd：YAG pulse laser with the wavelength of 1064 nm. To study the plasma expansion dynamics, we observed the plasma plume at different laser energies（5.0, 7.4 and 9.4 mJ）and different sample temperatures by using time-resolved image. We found that the heated target temperature could accelerate the expansion of plasma plume. Moreover, we also measured the effect of target temperature on the optical emission spectroscopy and signal-to-noise ratio.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
