Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

An equivalent circuit model for terahertz quantum cascade lasers:Modeling and experiments

Terahertz quantum cascade lasers（THz QCLs） emitted at 4.4 THz are fabricated and characterized. An equivalent circuit model is established based on the five-level rate equations to describe their characteristics. In order to illustrate the capability of the model, the steady and dynamic performances of the fabricated THz QCLs are simulated by the model.Compared to the sophisticated numerical methods, the presented model has advantages of fast calculation and good compatibility with circuit simulation for system-level designs and optimizations. The validity of the model is verified by the experimental and numerical results.

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly prominent.We present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device electrodes.Based on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step system.The HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent circuit.The proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines

A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach,including a relevant equation to reduce the deviation caused by approximation.The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects.The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately.The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade,attaining excellent results based on samples made from CMOS 0.13 and 0.18 μm process.

Two-port Equivalent Circuit Model for UHVDC Converter Valves

UHVDC converter valves during operation may experience overvoltage,which come from the AC or DC systems to which they are connected.Therefore,building an equivalent circuit model(ECM)for the converter valve to analyze the interlayer transient voltage distribution characteristics has important engineering significance for safe and reasonable voltage equalization methods and improving the stability of the DC system.This paper proposes a two-port equivalent circuit model for ±1100 kV converter valve based on the structure of the valve and parameter extraction methods presented.In terms of lumped parameters,integrated ECMs for valve layers are built through impedance-frequency characteristic analysis;in terms of parasitic capacitance parameters,port equivalent parasitic capacitance parameters are obtained by terminal capacitance method and iterative equivalence methods proposed in this paper.By combining integrated ECMs of valve layers and port equivalent parasitic capacitances,the two-port ECM is obtained.Simulations are carried out to test the effectiveness of the twoport ECM.Using the ECM,the voltage transmission characteristics and their influencing factors are analyzed,depending on which corresponding voltage equalization method is proposed in this paper,and the effect of this method is verified through simulation.

An improved single-π equivalent circuit model for on-chip inductors in GaAs process

An improved single-π equivalent circuit model for on-chip inductors in the GaAs process is presented in this paper. Considering high order parasites, the model is established by comprising an improved skin effect branch and a substrate lateral coupling branch. The parameter extraction is based on an improved characteristic function approach and vector fitting method. The model has better simulation than the previous work over the measured data of 2.5r and 4.5r on-chip inductors in the GaAs process.

Intrinsic stability of an HBT based on a small signal equivalent circuit model

Intrinsic stability ofthe heterojunction bipolar transistor （HBT） was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.

Analyzing the efects of post couplers in DTL tuning by the equivalent circuit model

Stabilization of the accelerating field in Drift Tube Linac（DTL） is obtained by inserting Post Couplers（PCs）. On the basis of the equivalent circuit model for the DTL with and without asymmetrical PCs, stabilization is deduced quantitatively： we let δω/ω0 be the relative frequency error, then we discover that the sensitivity of field to perturbation is proportional to √δω/ω0 without PCs and to δω/ω0 with PCs. Then we adapt the circuit model of symmetrical PCs for the case of asymmetrical PCs. The circuit model shows how the slope of field distribution is changed by rotating the asymmetrical PCs and illustrates that the asymmetrical PCs have the same effect as the symmetrical ones in stabilization.

An equivalent model of discharge instability in the discharge chamber of Kaufman ion thruster

The industrial application of the Kaufman ion thruster in its arc stage is limited owing to the instability of the discharge pulse.Presently,a complete prediction model that can predict the discharge pulse in the high-current stage does not exist.In this study,a complete prediction model for the pulse in the ion thruster is established using the zero-dimensional plasma discharge model and equivalent circuit model.The zero-dimensional plasma discharge model is used to obtain the corresponding plasma parameters by calculating the beam current,discharge current,voltage,and gas flow under actual working conditions.The input parameters of the equivalent circuit model are calculated using empirical formulae to acquire the estimated discharge waveforms.The pulse waveforms obtained using the model are found to be consistent with the experimental results.The model is used to evaluate the process of rapid changes in plasma density.Additionally,this model is employed to predict changes in the pulse waveforms when the volume of the discharge chamber and grid plate transmittance are changed.

Analysis of substrate eddy effects and distribution effects in silicon-based inductor model

The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor （6 turn, 3 060 μm in length） fabricated on low （ 1 Ω. cm） and high resistivity（ 1 000 Ω.cm） silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.

Transfer function modeling and analysis of the open-loop Buck converter using the fractional calculus

Based on the fact that the real inductor and the real capacitor are fractional order in nature and the fractional calculus,the transfer function modeling and analysis of the open-loop Buck converter in a continuous conduction mode（CCM） operation are carried out in this paper.The fractional order small signal model and the corresponding equivalent circuit of the open-loop Buck converter in a CCM operation are presented.The transfer functions from the input voltage to the output voltage,from the input voltage to the inductor current,from the duty cycle to the output voltage,from the duty cycle to the inductor current,and the output impedance of the open-loop Buck converter in CCM operation are derived,and their bode diagrams and step responses are calculated,respectively.It is found that all the derived fractional order transfer functions of the system are influenced by the fractional orders of the inductor and the capacitor.Finally,the realization of the fractional order inductor and the fractional order capacitor is designed,and the corresponding PSIM circuit simulation results of the open-loop Buck converter in CCM operation are given to confirm the correctness of the derivations and the theoretical analysis.

Diagnostic of capacitively coupled radio frequency plasma from electrical discharge characteristics：comparison with optical emission spectroscopy and fluid model simulation

The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.

Online Identification of Lithium-ion Battery Model Parameters with Initial Value Uncertainty and Measurement Noise

Online parameter identification is essential for the accuracy of the battery equivalent circuit model(ECM).The traditional recursive least squares(RLS)method is easily biased with the noise disturbances from sensors,which degrades the modeling accuracy in practice.Meanwhile,the recursive total least squares(RTLS)method can deal with the noise interferences,but the parameter slowly converges to the reference with initial value uncertainty.To alleviate the above issues,this paper proposes a co-estimation framework utilizing the advantages of RLS and RTLS for a higher parameter identification performance of the battery ECM.RLS converges quickly by updating the parameters along the gradient of the cost function.RTLS is applied to attenuate the noise effect once the parameters have converged.Both simulation and experimental results prove that the proposed method has good accuracy,a fast convergence rate,and also robustness against noise corruption.

Improvements to Temperature, Warburg Impedance, and Voltage Computations for a Design-Based Predictive Model for Lithium-Ion Capacitors

An earlier study manipulated the Butler-Volmer equation to effectively model a lithium-ion capacitor’s (LIC) energy storage as a function of its constituent components and charge current. However, this model had several shortcomings: computed temperature values were too low, voltage was inaccurate, and the model required Warburg impedance values that were two orders of magnitude higher than experimental results. This study began by analyzing the model’s temperature and voltage computations in order to justify output values. Ultimately, these justifications failed. Therefore, in situ temperature rise was measured during charge cycles. Experimental results indicated that temperature increases minimally during a charge cycle (<1%). At high current densities (≥150 A·kg-1) temperature increase is negligible. After it was found that LIC temperature change is minimal during a charge cycle, the model accurately computed LIC voltage during the charge cycle and computed Warburg impedance that agreed with values derived from earlier experimental studies, even falling within the measurements’ precision error.

The initial stages of Li_(2)O_(2) formation during oxygen reduction reaction in Li-O_(2) batteries:The significance of Li_(2)O_(2) in charge-transfer reactions within devices

Lithium-oxygen batteries are a promising technology because they can greatly surpass the energy density of lithium-ion batteries.However,this theoretical characteristic has not yet been converted into a real device with high cyclability.Problems with air contamination,metallic lithium reactivity,and complex discharge and charge reactions are the main issues for this technology.A fast and reversible oxygen reduction reaction(ORR)is crucial for good performance of secondary batteries',but the partial knowledge of its mechanisms,especially when devices are concerned,hinders further development.From this perspective,the present work uses operando Raman experiments and electrochemical impedance spectroscopy(EIS)to assess the first stages of the discharge processes in porous carbon electrodes,following their changes cycle by cycle at initial operation.A growth kinetic formation of the discharge product signal(Li_(2)O_(2))was observed with operando Raman,indicating a first-order reaction and enabling an analysis by a microkinetic model.The solution mechanism in the evaluated system was ascribed for an equivalent circuit with three time constants.While the time constant for the anode interface reveals to remain relatively constant after the first discharge,its surface seemed to be more non-uniform.The model indicated that the reaction occurs at the Li_(2)O_(2) surface,decreasing the associated resistance during the initial discharge phase.Furthermore,the growth of Li_(2)O_(2) forms a hetero-phase between Li_(2)O_(2)/electrolyte,while creating a more compact and homogeneous on the Li_(2)O_(2)/cathode surface.The methodology here described thus offers a way of directly probing changes in surface chemistry evolution during cycling from a device through EIS analysis.

A compact X-band backward traveling-wave accelerating structure

Very high-energy electrons(VHEEs)are potential candidates for FLASH radiotherapy for deep-seated tumors.We proposed a compact VHEE facility based on an X-band high-gradient high-power technique.In this study,we investigated and realized the first X-band backward traveling-wave(BTW)accelerating structure as the buncher for a VHEE facility.A method for calculating the parameters of single cell from the field distribution was introduced to simplify the design of the BTW structure.Time-domain circuit equations were applied to calculate the transient beam parameters of the buncher in the unsteady state.A prototype of the BTW structure with a thermionic cathode-diode electron gun was designed,fabricated,and tested at high power at the Tsinghua X-band high-power test stand.The structure successfully operated with 5-MW microwave pulses from the pulse compressor and outputted electron bunches with an energy of 8 MeV and a pulsed current of 108 mA.

An improved state-of-charge estimation method for sodium-ion battery based on combined correction of voltage and internal resistance

ABSTRACT The accurate state-of-charge(SOC)estimation of sodium-ion batteries is the basis for their efficient application.In this paper,a new SOC estimation method suitable for sodium-ion batteries and their application conditions is proposed,which considers the combination of open circuit voltage(OCV)and internal resistance correction.First,the optimal order of equivalent circuit model is analyzed and selected,and the monotonic and stable mapping relationships between OCV and SOC,as well as between ohmic internal resistance and SOC are determined.Then,a joint estimation algorithm for battery model parameters and SOC is estab-lished,and a joint SOC correction strategy based on OCV and ohmic internal resistance is established.The test results show that OCV correction is reliable when polarization is small,that the ohmic internal resistance correction is reliable when the current fluctuation is large,and that the maximum absolute error of SOC estimation of the proposed method is not more than 2.6%.

Analyzing the Effects of Key Design Factors of a Negative-Differential-Resistance(NDR)Microfluidic Oscillator–an Equivalent-Circuit-Model Approach

Numerical study on dynamic hydroelastic problems is usually rather complex due to the coupling of fluid and solid mechanics.Here,we demonstrate that the performance of a hydroelastic microfluidic oscillator can be analyzed using a simple equivalent circuit model.Previous studies reveal that its transition from the steady state to the oscillation state follows the negative-differential-resistance(NDR)mechanism.The performance is mainly determined by a bias fluidic resistor,and a pressurevariant resistor which further relates to the bending stiffness of the elastic diaphragm and the depth of the oscillation chamber.In this work,a numerical study is conducted to examine the effects of key design factors on the device robustness,the applicable fluid viscosity,the flow rate,and the transition pressure.The underlying physics is interpreted,providing a new perspective on hydroelastic oscillation problems.Relevant findings also provide design guidelines of the NDR fluidic oscillator.

Early Debonding Detection of Rebar-Concrete Interface due to External Loading Utilizing AC Impedance Spectroscopy

A novel method for detecting early damage at the steel-concrete interface due to external loading based on AC impedance spectroscopy technology was proposed.Firstly,alkali pretreatment was introduced to ensure the accuracy and repeatability of the AC impedance test.Secondly,the AC impedance spectroscopy between the steel bar and concrete surface of different bonding positions was tested,and then the physical quantities reflecting the bonding damage condition were obtained by equivalent circuit fitting.Theoretical debonding position calculation and AC conductive structure analysis indicate that the change of interface resistance and interface capacitance can seize the development of bonding damage during the loading process.As the interface damage develops,obvious changes in interface resistance and interface capacitance are observed,and they cannot be recovered after unloading.