Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device

We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.

Study on Extended Gate Field Effect Transistor with Nano-TiO-2 Sensing Membrane by Sol-Gel Method

The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.

Study on the Drift Effect of Potassium Ion Sensing Based on the Extended Gate Field Effect Transistor

The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection.

Fabrication of the Sodium Ions Extended Gate Field Effect Transistor by Using the Entrapment Method

The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important affair.In this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum structure.The fabrication of device needed to use the entrapment method.

Study on the Carbon Nanotube Separative Structure for the Extended Gate H^+-Ion Sensitive Field Effect Transistor

We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.

Calibration of the Circuit Measurement for the Glucose Sensor

The extended gate field effect transistor (EGFET)has many advantages such as the fabrication is easy,low cost, easy to operate etc.The EGFET was applied to biosensor in recent years.In this study,the tin oxide (SnO_2)pH sensitive membrane was deposited on ITO glass,when the surface voltage which pH membrane changes,the gate voltage and current channel of MOSFET will change immediately to detect concentration of the glucose sensor.In this study we have devoted to research about the calibration of the circuit measurement for the glucose sensor,and study the calibration system of the drift and hysteresis.