A monolithic integrated medium wave Mercury Cadmium Telluride polarimetric focal plane array

A medium wave(MW)640×512(25μm)Mercury Cadmium Telluride(HgCdTe)polarimetric focal plane array(FPA)was demonstrated.The micro-polarizer array(MPA)has been carefully designed in terms of line grating structure optimization and crosstalk suppression.A monolithic fabrication process with low damage was explored,which was verified to be compatible well with HgCdTe devices.After monolithic integration of MPA,NETD<9.5 mK was still maintained.Furthermore,to figure out the underlying mechanism that dominat⁃ed the extinction ratio(ER),specialized MPA layouts were designed,and the crosstalk was experimentally vali⁃dated as the major source that impacted ER.By expanding opaque regions at pixel edges to 4μm,crosstalk rates from adjacent pixels could be effectively reduced to approximately 2%,and promising ERs ranging from 17.32 to 27.41 were implemented.

Computer Simulation of Compensation Method for Infrared Focal Plane Array

A major motivation for this work is to investigate a method of computer simulation for compensating fixed pattern noise of the infrared focal plane arrays. A mathematical model of the output signal of focal plane array was established; a compensating algorithm utilizing reference source was derived and simulating programs were designed. The images of compensating process verify the influence of nonuniformity of responsibility and offset on fixed pattern noise. The result show that simulating method of investigating compensation technology for focal plane arrays is feasible, the generated images and methods can be used to the study of image recognition.

Short-wave infrared InGaAs photodetectors and focal plane arrays

In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-Ⅱ In As/GaSb superlattice

A very long wavelength infrared（VLWIR） focal plane array based on In As/Ga Sb type-Ⅱ super-lattices is demonstrated on a Ga Sb substrate. A hetero-structure photodiode was grown with a 50% cut-off wavelength of 15.2 μm, at 77 K.A 320×256 VLWIR focal plane array with this design was fabricated and characterized. The peak quantum efficiency without an antireflective coating was 25.74% at the reverse bias voltage of-20 mV, yielding a peak specific detectivity of 5.89×10^10cm·Hz^1/2·W^-1. The operability and the uniformity of response were 89% and 83.17%. The noise-equivalent temperature difference at 65 K exhibited a minimum at 21.4 mK, corresponding to an average value of 56.3 mK.

Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

In this paper we focused on the mask technology of inductively coupled plasma（ICP） etching for the mesa fabrication of infrared focal plane arrays（FPA）.By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm^2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm^2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher（BOE） based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm^2 and the average detectivity of 4.51 × 10~9 cm·Hz^（1/2）.W^（-1）at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference（NEDT） of 22.9 mK operating at 77 K.

Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging

Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,etc.This paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building blocks.Polarimetric and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully manufactured.Polarimetric imaging with enhanced contrast has been demonstrated.The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.

Thermal and mechanical characterizations of a substrate-free focal plane array

We propose a substrate-free focal plane array （FPA） and the microcantilevers extend from a supporting frame. in this paper. The solid substrate is completely removed, Using finite element analysis, the thermal and mechanical characterizations of the substrate-free FPA are presented. Because of the large decrease in thermal conductance, the supporting frame is temperature dependent, which brings out a unique feature： the lower the thermal conductance of the supporting frame is, the higher the energy conversion efficiency in the substrate-free FPA will be. The results from the finite element analyses are consistent with our measurements： two types of substrate-free FPAs with pixel sizes of 200×200 and 60×60 um^2 are implemented in the proposed infrared detector. The noise equivalent temperature difference （NETD） values are experimentally measured to be 520 and 300 mK respectively. Further refinements are considered in various aspects, and the substrate-free FPA with a pixel size of 30×30 um^2 has a potential of achieving an NETD value of 10 mK.

Focal Plane Image Assembly of Subpixel

This paper describes the scanning assembly principle and construction of scanning assembly sample.The factors that affect assembly accuracy are analyzed.There are two steps in CCD focal plane scanning assembly.The first is rough assembly,and the second is accurate assembly.In this paper,the moiré fringe is introduced in judging assembly accuracy directly and accurately.The equation for optical transmission characteristics of CCD Moiré fringes is presented.The measurement of Moiré fringes can be completed when some conditions are satisfied.2D_assembly error can be obtained by using digital correlation filtering technique.Finally,the result of focal plane scanning assembly is presented.The result is in good accordance with theory.

Distribution of radiation flux in focal plane for a parabolic dish solar system

Radiation flux of focal plane plays a very important role of efficiency in a parabolic dish solar system.This paper aims to present the distribution of radiation flux in focal plane for every incident solar irradiation.Monte-Carlo ray-tracing method is applied and coupled with the measuring value of incident solar irradiation in Harbin City hourly.The results show that radiation flux in focal plane remains unchanged for different radius from 0 mm to 15 mm,and gradually decreases for different radius from 15 mm to 20 mm.And the results also show that the influence of incident solar irradiation on radiation flux in focal plane is very great,and the highest radiation flux is 21.8 W/mm2,when incident solar irradiation value is 1100 W/m2.

Complete Focal Plane Compression Based on CMOS Image Sensor Using Predictive Coding

In this paper, a CMOS image sensor(CIS) is proposed, which can accomplish both decorrelation and entropy coding of image compression directly on the focal plane. The design is based on predictive coding for image decorrelation. The predictions are performed in analog domain by 2×2 pixel units. Both the prediction residuals and original pixel values are quantized and encoded in parallel. Since the residuals have a peak distribution around zero,the output codewords can be replaced by the valid part of the residuals' binary mode. The compressed bit stream is accessible directly at the output of CIS without extra disposition. Simulation results show that the proposed approach achieves a compression rate of 2. 2 and PSNR of 51 on different test images.

Testing System Based on Virtual Instrument for Readout Circuit of Infrared Focal Plane Array

Readout integrated circuit(ROIC) is one of the most important components for hybrid-integrated infrared focal plane array(IRFPA). And it should be tested to ensure the product yield before bonding. This paper presents an on-wafer testing system based on Labview for ROIC of IRFPA. The quantitative measurement can be conducted after determining whether there is row crosstalk or not in this system. This low-cost system has the benefits of easy expansion, upgrading, and flexibility, and it has been employed in the testing of several kinds of IRFPA ROICs to measure the parameters of saturated output voltage, non-uniformity, dark noise and dynamic range, etc.

Design and Imaging Application of Room-Temperature Terahertz Detector with Micro-Bolometer Focal Plane Array

Room-temperature terahertz （THz） detectors indicate a great potential in the imaging application because of their real-time, compact bulk, and wide spectral band responding characteristics. THz detectors with different dimensions based on a micro-bridge structure have been designed and fabricated to get optimized micro-bolometer parameters from the test results of membrane deformation. A nanostructured titanium （Ti） thin film absorber is integrated in the micro-bridge structure of the VOx micro-bolometer by a combined process of magnetron sputtering and reactive ion etching （RIE）, and its improvement of THz absorption is verified by an optical characteristics mesurement. Continuous-wave THz detection and imaging are demonstrated by using a 2.52 THz far infrared CO2 laser and a 320x240 vanadium oxide micro-bolometer focal plane array with an optimized cell structure. With this detecting system, THz imaging of metal concealed in a wiping cloth and an envelope is demonstrated, respectively.

TEC Colling Shortwave Infrared 320×256 Focal Plane Detector

The short-wave HgCdTe thin film material was grown by liquid phase epitaxy on CdTe substrate,Adopt n on p injection bonding and function and flip-flop mixing process,With a low noise readout circuit,sealed with a high airtightness cellular-metal shell,Using a four-stage Thermo Electric Cooler(TEC),320×256 Short Wave Infrared Focal Plane Cooling Detecto r available to operate at near room temperature(210K).Its main photoelectric performance are signal-to-noise ratio greater than 400,nonuniformity equivalent to 4.69%,operability equivalent to 99.76%,frame rate equivalent to 115Hz,component weight less than 150grams.

Ge-based Medium Wave Infrared MCT 1280×1024 Focal Plane Detector

Medium-wave HgCdTe thin films grown on germanium-based substrates by molecular beam epitaxy were treated by large area n-on-p injection junction and flip-flop mixing process.The chips interconnected with low-noise and multimodal options readout circuit composed a 1280×1024 Medium-wave Infrared Focal Plane Cooling Detector whose pixel spacing was 15 microns.Its main photoelectric properties are average NETD equivalent to 18.5 mK,non-uniformity equivalent to 7.5%,operability equivalent to 98.97%.The paper also studies the substrate-removal technique on Germanium-based chip,which improves the stability and reliability of detector.

A Heavy Ion Focal Plane Detector for Beijing Q3D Magnetic Spectrometer

A semi-length focal plane detecting system for heavy ions has been built onthe Beijing Q3D magnetic spectrometer and tested by 12C+197Au,16O+150Sm,and 18O-156Gd reactions.The intrinsic resolutions of position and angle were 1.1 mmand 0.8°,respectively.The resolutions of energy loss ΔE,residual energy ER and totalenergy ET obtained were 3.0%,1.4% and 0.9%.respectively,after a special method ofdata processing was adopted.The achievable mass resolution is estimated to be about1.0% after necessary corrections for some signals concerned.Discussion aboul the edgeeffect of the detectors of this type is given too.

THE WAVELET TRANSFORM BASED PROCESSING MEANS FOR 1/f NOISE IN MILLIMETER WAVE FOCAL PLANE ARRAY

After briefly introducing the characteristics of 1/f noise in millimeter wave focalplane array detectors, the paper analyses the relation of wavelet transform and 1/f noise in detail, suggests the fashion of decorrelating 1/f noise using the wavelet transform and deduces the relative expressions. The results of computer simulation show good effectiveness.

Etching Process of Back-Illuminated ZnO Ultraviolet Focal Plane Array Imagers

Etching process of back-illuminated ZnO ultraviolet focal plane array imagers was investigated. The etching result of 128 × 128 array ,in which the area of unit ceil was 25μm × 25μm, was studied. The profile angle was approximately 80°. There was a linear relationship between the etching depth and the etching time. The dependence of etching rate on NH4Cl solution concentration was also studied. The photoresponsivity of the array＇s unit cells was measured. The UV-to- visible rejection ratio was around 60 ： 1.

Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb superlattices

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer superlattices （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the superlattices and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.

A substrate-free optical readout focal plane array with a heat sink structure

A substrate-ffee optical readout focal plane array （FPA） operating in 8-12 um with a heat sink structure （HSS） was fabricated and its performance was tested. The temperature distribution of the FPA with an HSS investigated by using a commercial FLIR IR camera shows excellent uniformity. The thermal cross-talk effect existing in traditional substrate-free FPAs was eliminated effectively. The heat sink is fabricated successfully by electroplating copper, which provides high thermal capacity and high thermal conductivity, on the frame of substrate-free FPA. The FPA was tested in the optical-readout system, the results show that the response and NETD are 13.6 grey/K （F / # = 0.8） and 588 inK, respectively.

A novel MEMS-based focal plane array for infrared imaging

On the basis of opto-mechanical effect and micro electromechanical system(MEMS)technology,a novel substrate-free focal plane array(FPA)with the thermal isolated structure for uncooled infrared imaging is developed,even as alternate evaporated Au on SiN cantilever is used for thermal isolation.A human thermal image is obtained successfully by using the infrared imaging system composed of the FPA and optical detecting system.The experiment results show that the realization of thermal isolation structure in substrate-free FPA increases the temperature rise of the deflecting leg effectively,whereas the noise equivalent temperature difference(NETD)is about 200 mK.