Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor

The temperature-dependent effect of residual charge carrier （no）, at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor （GFET） using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature.

Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.

Application of graphene vertical field effect to regulation of organic light-emitting transistors

The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to 102.Because of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties.We also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

Ultrasensitive detection of methamphetamine by antibody-modified transistor assay

Effective detection of methamphetamine(Met)requires a fast,sensitive,and cheap testing assay.However,commercially available methods require expensive instruments and highly trained operators,which are time-consuming and labor-intensive.Herein,an antibody-modified graphene transistor assay is developed for sensitive and minute-level detection of Met in complex environments.The anti-Met probe captured charged targets within 120 s,leading to a p-doping effect near the graphene channel.The limit of detection reaches 50 aM(5.0×10^(-17)M)Met in solution.The graphene transistor would be a valuable tool for Met detection effective prevention of drug abuse.

Depositing aluminum as sacrificial metal to reduce metal–graphene contact resistance

Reducing the contact resistance without degrading the mobility property is crucial to achieve high-performance graphene field effect transistors. Also, the idea of modifying the graphene surface by etching away the deposited metal provides a new angle to achieve this goal. We exploit this idea by providing a new process method which reduces the contact resistance from 597Ω ·μm to sub 200 Ω ·μm while no degradation of mobility is observed in the devices. This simple process method avoids the drawbacks of uncontrollability, ineffectiveness, and trade-off with mobility which often exist in the previously proposed methods.

Sentaurus~based modeling and simulation for GFET's characteristic for ssDNA immobilization and hybridization

The graphene field effect transistor （GFET） has been widely studied and developed as sensors and functional devices. The first report about GFET sensing simulation on the device level is proposed. The GFET＇s characteristics, its responding for single strand DNA （ssDNA） and hybridization with the complimentary DNA （cDNA） are simulated based on Sentaurus, a popular CAD tool for electronic devices. The agreement between the simulated blank GFET feature and the reported experimental data suggests the feasibility of the presented simulation method. Then the simulations of ssDNA immobilization on GFET and hybridization with its cDNA are performed, the results are discussed based on the electron transfer （ET） mechanism between DNA and graphene.