High Brightness,High Power Density Fiber Coupling of High Power Laser Diode

The output radiation from the 100μm×1μm aperture of a high power Laser Diode (LD) is efficiently coupled into a 50μm multimode optical fiber.The fiber output of the high power LD with high brightness and high power density is achieved.The power density is up to 3 6×104W/cm2 and the coupling efficiency is 70%.The extreme divergence and the astigmatism of high power LDs require the optics with complex lens structures and high performance.A double-curved lens with two crossed cylindrical lenses structured on both sides of the glass substrate is used in the coupling system.

Fabrication and testing of phase change heat sink for high power LED

A novel phase change heat sink was fabricated for packaging cooling of high power light emitting diode （LED）. 3D structures as enhanced boiling structure in the evaporation surface were composed of a spiral micro-groove along circumferential direction and radial micro-grooves which were processed by ploughing-extrusion （P-E） and stamping, respectively. Meanwhile, the cycle power of refrigerant was supplied by wick of sintered copper powder on internal surface of phase change heat sink. Operational characteristics were tested under different heat loads and refrigerants. The experimental results show that phase change heat sink is provided with a good heat transfer capability and the temperature of phase change heat sink reaches 86.8 ℃ under input power of 10 W LED at ambient temperature of 20 ℃.

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

Design of a New Water Load for S-band 750 kW Continuous Wave High Power Klystron Used in EAST Tokamak

In order to test the klystrons operated at a frequency of 3.7 GHz in a continuous wave （CW） mode, a type of water load to absorb its power up to 750 kW is presented. The distilled water sealed with an RF ceramic window is used as the absorbent. At a frequency range of 70 MHz, the VSWR （Voltage Standing Wave Ratio） is below 1.2, and the rise in temperature of water is about 30 ℃ at the highest power level.

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy （OES） to study the gas phase in high power DC arc plasma jet chemical vapour deposition （CVD） during diamond films growth processes. The results show that all the deposition parameters （methane concentration, substrate temperature, gas flow rate and ratio of H2/Ar） could strongly influence the gas phase. C2 is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C2 and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C2 is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.

Optimization of three-dimensional boiling enhancement structure at evaporation surface for high power light emitting diode

A theoretical model of phase change heat sink was established in terms of thermal resistance network. The influence of different parameters on the thermal resistance was analyzed and the crucial impact factors were determined. Subsequently, the forming methods including ploughing-extrusion and stamping method of boiling enhancement structure at evaporation surface were investigated, upon which three-dimensional microgroove structure was fabricated to improve the efficiency of evaporation. Moreover, the crucial parameters related to the fabrication of miniaturized phase change heat sink were optimized. The heat transfer performance of the heat sink was tested. Results show that the developed phase change heat sink has excellent heat transfer performance and is suitable for high power LED applications.

Computer Modeling and Simulation Evaluation of High Power LED Sources for Secondary Optical Design

Proposed and demonstrated is a novel computer modeling method for high power light emitting diodes(LEDs). It contains geometrical structure and optical property of high power LED as well as LED dies definition with its spatial and angular distribution. Merits and non-merits of traditional modeling methods when applied to high power LEDs based on secondary optical design are discussed. Two commercial high power LEDs are simulated using the proposed computer modeling method. Correlation coefficient is proposed to compare and analyze the simulation results and manufacturing specifications. The source model is precisely demonstrated by obtaining above 99% in correlation coefficient with different surface incident angle intervals.

Fabrication of Tm-Doped Fibers for High Power and 121W Output All-Fiber Tm-Doped Fiber Laser

We fabricate the Tm-doped double cladding silica fiber by using the vapor-solution hybrid-doping method, then build up an all-fiber Tin-doped fiber laser which can provide the output power of up to 121 W, corresponding to a slope efficiency of 51% and an optical-optical efficiency of 48%. By using the domestic Tin-doped fiber, it is the first time a hundred-watt level output at 1915nm has been achieved, to the best of our knowledge. The thermal effect of Tm-doped fiber laser is also analyzed.

980 nm High Power Semiconductor Laser Stacked Arrays with Non-absorbing Window

980 nm InGaAs/GaAs separate confinement heterostructure （SCH） strained quantum well （QW） laser with non-absorbing facets was fabricated by using thermal treatment. Microchannel coolers with a five-layer thin oxygen-free copper plate structure were designed and fabricated through thermal bonding in hydrogen ambient. The highest CW （continuous wave） output power of 200 W for 5-bar arrays packaged by microchannel coolers was presented.

Thermal Resistance Testing Technology Research of Integration High Power-LED

In this paper,high-power LED with many integrated chips is used as thermal resistance analysis research object, and we do thermal resistance testing technology research on it. We put forward the thermocouple point contact test method. According to the principle that LED forward voltage changes with temperature,LED heat sink to surface temperature distribution is studied directly in the test,and then we analyze the thermal resistance of high-power LED with many integrated chips when its secondary packaging is introduced. This method makes the measurement of thermal resistance of LED more rapid and convenient. It provides an effective assessment method for the analysis of high power LED device design and engineering application.

Study on the Generation of Ultra-Wideband (UWB) High Power Microwave

The experimental study of ultra-wideband (UWB) technology, its generation and on-line measurement are presented. An experimental repetitive UWB system is designed, manufactured, and tested. High-pressure spark gap switch and its components, as well as oil spark gap switch are studied experimentally on the system. Experimental results indicate that the system operates at a 200 pps repetitive rate with a stable performance. 100 MW peak power UWB pulses are obtained on the system. Fast-time response capacitive divider is designed and fabricated, allowing for an accurate measurement of the high power UWB signal. The main issues related to the design of the switch and the UWB signal online measurement are discussed.

Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

Experimental study of weld position detection based on keyhole infrared image during high power fiber laser welding

Keyhole is one of the important phenomena in high-power laser welding process. By studying the keyhole characteristic and detecting the seam offset during high-power fiber laser welding, an infrared sensitive high-speed camera arranged off-axis orientation of laser beam was applied to capture the dynamic thermal images of a molten pool. The 304 austenitic stainless steel plate butt joint welding experiment with laser power 10 kW was carried out. Through analyzing the keyhole infrared image, the weld position was calculated. Least squares method was used to determine the actual weld position. Image filtering technique was used to process the keyhole image, and the keyhole centroid coordinate were calculated. Also, least squares method was used to fit the keyhole centroid curve equation and establish a nonlinear continuous model which described the deviation between keyhole centroid and weld seam. The heat accumulation effect affected by the infrared radiation was analyzed to determine whether the laser beam focus spot deviated from the desired welding seam. Experimental results showed that the keyhole centroid has related to the seam offset, and can reflect the welding quality.

RESEARCH ON CYLINDRICAL BOX TYPE WINDOWS USED TO TRANSMIT HIGH POWER CW

The formula for calculating the threshold of average transmitting power of cylindrical TE11 mode window is revised by accurate deduction and a practical method for calculating the temperature increment of the dielectric disk in cylindrical box type window is given. Meanwhile,a typical cylindrical box type window is calculated and used as an example to discuss the power capacity, the special harmfulness and elimination of ghost mode resonance when the window is used to transmit high power Continuous Wave(CW).

Simulation of High Power Er/Yb Codoped Fiber Linear Cavity Lasers

The performances of high power Er/Yb codoped fiber linear cavity lasers are investigated numerically. The numerical analysis is based on the iterative solution of rate equations for population density of the Er/Yb ions. The behaviors of co-pump and counter-pump methods are contrasted. Dependence of output power on input pump power, output reflectivity, operating wavelength and active fiber length is simulated, respectively. High conversion efficiency Er/Yb laser output is obtained in simulations and experiments.

Development of a Medium Voltage, High Power, High Frequency Four-Port Solid State Transformer

The power and voltage levels of renewable energy resources is growing with the evolution of the power electronics and switching module technologies.For that,the need for the development of a compact and highly efficient solid-state transformer is becoming a critical task in-order to integrate the current AC grid with the new renewable energy systems.The objective of this paper is to present the design,implementation,and testing of a compact multi-port solid-state transformer for microgrid integration applications.The proposed system has a four-port transformer and four converters connected to the ports.The transformer has four windings integrated on a single common core.Thus,it can integrate different renewable energy resources and energy storage systems.Each port has a rated power of 25 kW,and the switching frequency is pushed to 50 k Hz.The ports are chosen to represent a realistic industrial microgrid model consisting of grid,energy storage system,photovoltaic system,and load.The grid port is designed to operate at 4.16 k VAC corresponding to 7.2 kV DC bus voltage,while the other three ports operate at 500 VDC.Moreover,the grid,energy storage and photovoltaic ports are active ports with dual active bridge topologies,while the load port is a passive port with full bridge rectifier one.The proposed design is first validated with simulation results,and then the proposed transformer is implemented and tested.Experimental results show that the designed system is suitable for 4.16 k VAC medium voltage grid integration.

Study on High Power Hall Electric Propulsion Technology

High power Hall electric propulsion technology is a very competitive electric propulsion technology for future large space missions such as large GEO satellites,manned space programs,deep space explorations,cargo ships,space tugs.Based on the experience of more than 20 years in research and development of Hall electric propulsion,the Shanghai Institute of Space Propulsion(SISP)has developed 3 high power Hall thrusters,i.e.,the 10 k W class HET-500,20 k W class HET-1000,and 50 k W class HET-3000.This paper presents the development status of the high power(≥10 k W)Hall electric propulsion at SISP,including tests of 3 high power Hall thrusters in the power range from 10 k W to 50 k W,the qualification of a single string of a 10 k W Hall electric propulsion system,and the study of a cluster of two 1.35 k W HET-80 Hall thrusters to understand the technical issues related to multi-thruster high power electric propulsion systems.

High Power VCSEL Device with Periodic Gain Active Region

High power vertical cavity surface emitting lasers(VCSEKLs) with large aperture have been fabricated through improving passivation, lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structures, a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure, with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration were used to improve the beam quality and the heat dissipation. A maximum output power of 1.4 W was demonstrated at CW operation for a 400 μm-diameter device. The lasing wavelength shifted to 995.5 nm with a FWHM of 2 nm at a current of 4.8 A due to the internal heating and the absence of active water cooling. A ring-shape far field pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16° were observed with current beyond 4.8 A.

Changes in Rat Testicular Germ Cell Apoptosis after High Power Microwave Radiation

Aim:To study the effect of high power microwave (HPM) radiation on the testicular germ cell apoptosis. Methods: One hundred and twenty-five Spraque-Dawley rats were randomly divided into two groups, the control group and the experimental group and the latter was further divided into four subgroups: 10 mW/cm2 5 min, 10 mW/cm210 min, 20 mw/cm2 5 min and 20 mW/cm210 min. The experimental groups were radiated with S wave band of 10 mW/ cm2,20 mW/cm2 high power microwave for 5 or 10 min. Testicular samples were taken at 6 h, 24 h, 48 h, 72 h and 5 d after radiation. The testicular germ cell apoptosis was detected by in situ terminal deoxynucleotityl transferase mediated dUTP nick end labeling (TUNEL). Results: The number of apoptotic cells of the 6 h, 24 h and 48 h experimental groups after 10 and 20 mW/cm2 radiation for 5 min was significantly larger than that of the controls (P< 0.01), especially after 10 mW/cm2 radiation. The number of the 6 h group reached the peak (161.27±+5.90)/5 convoluted tubules. The changes in the other experimental groups had no significant difference compared with the controls (P>0.05). Conclusion: HPM increases the germ cell apoptosis of rat testis, which is related to the time of radiation and sample acquisition. In the condition of the present test, 5 minutes of HPM radiation may significantly enhance testicular germ cell apoptosis and damage, which in turn may influence the reproductive function of the rats.