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Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD
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作者 陈永生 汪建华 +3 位作者 卢景霄 杨根 郜小勇 杨仕娥 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第7期1005-1008,共4页
The hydrogen plasma degradation of transparent conduction oxides (TCO) is studied for hydrogenated microcrystalline Si(μc-Si:H)prepared by plasma enhanced chemical vapor deposition (PECVD). TCO films such as S... The hydrogen plasma degradation of transparent conduction oxides (TCO) is studied for hydrogenated microcrystalline Si(μc-Si:H)prepared by plasma enhanced chemical vapor deposition (PECVD). TCO films such as SnO2 and SnO2/ZnO bi-layer films were exposed to atomic H at various substrate temperatures and for various treatment times. A decrease in the transmittance due to reduction by atomic H was scarcely observed for SnO2 / ZnO bi-layer,while a decrease for SnO2 was found to depend strongly on the substrate temperature. The resistivity of SnO2 films decreases significantly when substrate temperature exceeds 150℃in H-plasma. However, H-plasma treatment has little impact on the resistivity of SnO2/ZnO bi-layer film. The reason for the decrease in the transmittance is the appearance of metallic Sn on the surface, and under this condition no μc-Si: H film is deposited. SnO2/ZnO bi-layer is very effective for the suppression of the reduction of TCO during μc-Si:H deposition. The performance of microcrystalline silicon solar cells fabricated on ZnO/SnO2/glass is also investigated. 展开更多
关键词 TCO hydrogenated microcrystalline silicon hydrogen plasma degradation
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Synthesis and Kinetics of Hydrogenated Rosin Dodecyl Ester as an Environmentally Friendly Plasticizer 被引量:3
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作者 Qiaoguang Li Sheng Gong +4 位作者 Jie Yan Hongchao Hu Xugang Shu Hanqing Tong Zhiye Cai 《Journal of Renewable Materials》 SCIE EI 2020年第3期289-300,共12页
The plasticizer is an important polymer material additive.Non-toxic and environmentally friendly plasticizers are developed recently in order to decrease fossil fuel reserves,serious environmental pollution and the to... The plasticizer is an important polymer material additive.Non-toxic and environmentally friendly plasticizers are developed recently in order to decrease fossil fuel reserves,serious environmental pollution and the toxicity of phthalate esters.In this study,a new,efficient and environmentally friendly plasticizer of hydrogenated rosin dodecyl ester was prepared by an esterification reaction of hydrogenated rosin and dodecanol.The influences of different reaction conditions(including different catalysts,the catalyst concentration,the ratio of the reactants,reaction temperature,and reaction time)on the esterification yield are examined and discussed.Hydrogenated rosin dodecyl ester with 71.8%yield was synthesized under the optimized reaction conditions(1:0.8 molar ratio of rosin to dodecanol,1 mol%tetrabutyl titanate concentration,and 210℃for 6 h).The esterification reaction is a second-order reaction,and kinetic calculations showed that the activation energy is 39.77 KJ·mol^(−1).The structure of the hydrogenated rosin dodecyl ester was confirmed by FT-IR spectroscopy and^(13)C NMR spectrum.Besides,the thermal stability of target product(hydrogenated rosin dodecyl ester)was also tested by thermal gravimetric analysis(TGA),which showed a good thermal stability. 展开更多
关键词 Environmentally friendly plasticizer hydrogenated rosin dodecyl ester SYNTHESIS kinetics study
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Study on stability of hydrogenated amorphous silicon films 被引量:2
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作者 朱秀红 陈光华 +5 位作者 张文理 丁毅 马占洁 胡跃辉 何斌 荣延栋 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第11期2348-2351,共4页
Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour d... Hydrogenated amorphous silicon (a-Si:H) films with high and same order of magnitude photosensitivity (-10^5) but different stability were prepared by using microwave electron cyclotron resonance chemical vapour deposition system under the different deposition conditions. It was proposed that there was no direct correlation between the photosensitivity and the hydrogen content (CH) as well as H-Si bonding configurations, but for the stability, they were the critical factors. The experimental results indicated that higher substrate temperature, hydrogen dilution ratio and lower deposition rate played an important role in improving the microstructure of a-Si:H films. We used hydrogen elimination model to explain our experimental results. 展开更多
关键词 hydrogenated amorphous silicon (a-Si:H) films PHOTOSENSITIVITY STABILITY microstructure hydrogen elimination (HE) model
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Semi-quantitative study on the Staebler-Wronski effect of hydrogenated amorphous silicon films prepared with HW-ECR-CVD system 被引量:2
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作者 丁毅 刘国汉 +5 位作者 陈光华 贺德衍 朱秀红 张文理 田凌 马占杰 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第4期813-817,共5页
The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during i... The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample. 展开更多
关键词 hydrogenated amorphous silicon Staebler-Wronski effect microwave electron cyclotronresonant chemical vapour deposition charged defects
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Influence of Microwave Power on the Properties of Hydrogenated Diamond-Like Carbon Films Prepared by ECR Plasma Enhanced DC Magnetron Sputtering 被引量:2
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作者 汝丽丽 黄建军 +1 位作者 高亮 齐冰 《Plasma Science and Technology》 SCIE EI CAS CSCD 2010年第5期551-555,共5页
Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hy... Electron cyclotron resonance (ECR) plasma was applied to enhance the direct current magnetron sputtering to prepare hydrogenated diamond-like carbon (H-DLC) films. For different microwave powers, both argon and hydrogen gas are introduced separately as the ECR working gas to investigate the influence of microwave power on the microstructure and electrical property of the H-DLC films deposited on P-type silicon substrates. A series of characterization methods including the Raman spectrum and atomic force microscopy are used. Results show that, within a certain range, the increase in microwave power affects the properties of the thin films, namely the sp3 ratio, the hardness, the nanoparticle size and the resistivity all increase while the roughness decreases with the increase in microwave power. The maximum of resistivity amounts to 1.1×10^9 Ω.cm. At the same time it is found that the influence of microwave power on the properties of H-DLC films is more pronounced when argon gas is applied as the ECR working gas, compared to hydrogen gas. 展开更多
关键词 hydrogenated diamond-like carbon films ECR plasma magnetron sputtering microwave power
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Hydrogenated antimonene as quantum spin Hall insulator:A first-principles study 被引量:1
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作者 Xin He Ji-Biao Li 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第3期337-341,共5页
Using first-principles calculations based on density functional theory(DFT), the structural and electronic properties of hydrogenated antimonene have been systematically investigated. Phonon dispersion and molecular d... Using first-principles calculations based on density functional theory(DFT), the structural and electronic properties of hydrogenated antimonene have been systematically investigated. Phonon dispersion and molecular dynamics(MD)simulation reveal that fully hydrogenated(FH) antimonene has high dynamic stability and could be synthesized. A newσ-type Dirac cone related to Sb-px,y orbitals is found in FH antimonene, which is robust to tensile strain. Noticeably, the spin orbital coupling(SOC) opens a quantum spin Hall(QSH) gap of 425 meV at the Dirac cone, sufficiently large for practical applications at room temperature. Semi-hydrogenated antimonene is a non-magnetic metal. Our results show that FH antimonene may have great potential applications in next generation high-performance devices. 展开更多
关键词 antimonene DIRAC CONE quantum SPIN Hall(QSH) INSULATOR hydrogenated FIRST-PRINCIPLES calculations
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Research on the optimum hydrogenated silicon thin films for application in solar cells 被引量:1
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作者 雷青松 吴志猛 +3 位作者 耿新华 赵颖 孙健 奚建平 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第12期3033-3038,共6页
Hydrogenated silicon (Si:H) thin films for application in solar ceils were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃,... Hydrogenated silicon (Si:H) thin films for application in solar ceils were deposited by using very high frequency plasma enhanced chemical vapour deposition (VHF PECVD) at a substrate temperature of about 170 ℃, The electrical, structural, and optical properties of the films were investigated. The deposited films were then applied as i-layers for p-i-n single junction solar cells. The current-voltage (I - V) characteristics of the cells were measured before and after the light soaking. The results suggest that the films deposited near the transition region have an optimum properties for application in solar cells. The cell with an i-layer prepared near the transition region shows the best stable performance. 展开更多
关键词 hydrogenated silicon thin film transition region Si:H thin film solar cell STABILITY
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Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition 被引量:1
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作者 闫许 冯飞 +1 位作者 张进 王跃林 《Plasma Science and Technology》 SCIE EI CAS CSCD 2009年第5期569-575,共7页
Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness... Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4:25 sccm (standard cubic centimeters per minute), At: 275 sccm, 10%PH3/N2:2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles. 展开更多
关键词 hydrogenated amorphous silicon film surface roughness plasma enhancedchemical vapor deposition
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Oxidation Effects on the Electronic Properties of Hydrogenated Silicon Clusters 被引量:1
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作者 刘光华 邓小燕 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2010年第5期762-768,共7页
The geometric and electronic properties of some hydrogenated silicon clusters in the presence of oxygen on the surface have been investigated.The density functional theory with generalized gradient approximation funct... The geometric and electronic properties of some hydrogenated silicon clusters in the presence of oxygen on the surface have been investigated.The density functional theory with generalized gradient approximation functional was applied in our calculations.By calculating the total energy,the double bond Si=O is shown to be more stable than the bridge bond Si-O-Si for large size oxidized clusters.The results of Mulliken population analysis indicate that a so-called passivation effect is enhanced by oxidization effects.From the energy band structures and density of states,we find that some localized states are induced by the p-orbital of O atom mainly and reduce the energy gaps substantially. 展开更多
关键词 hydrogenated Si cluster oxidation effects density functional theory
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The role of hydrogen in hydrogenated microcrystalline silicon film and in deposition process with VHF-PECVD technique
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作者 杨恢东 苏中义 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第6期1374-1378,共5页
The role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been inve... The role of hydrogen in hydrogenated microcrystalline silicon (μc-Si:H) thin films in deposition processes with very high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) technique have been investigated in this paper. With in situ optical emission spectroscopy (OES) diagnosis during the fabrication of μc-Si:H thin films under different plasma excitation frequency Ve (60MHz-90MHz), the characteristic peak intensities (IsiH*, IHα* and IHβ* ) in SiH4+H2 plasma and the ratio of (IHα* + IHβ* ) to IsiH* were measured; all the characteristic peak intensities and the ratio (IHα* + IHβ* )/IsiH* are increased with plasma excitation frequency. It is identified that high plasma excitation frequency is favourable to promote the decomposition of SiH4+H2 to produce atomic hydrogen and SiHx radicals. The influences of atomic hydrogen on structural properties and that of SiHx radicals on deposition rate of μc-Si:H thin films have been studied through Raman spectra and thickness measurements, respectively. It can be concluded that both the crystalline volume fraction and deposition rate are enhanced with the increase of plasma excitation frequency, which is in good accord with the OES results. By means of FTIR measurements, hydrogen contents of μc-Si:H thin films deposited at different plasma excitation frequency have been evaluated from the integrated intensity of wagging mode near 640 cm^-1. The hydrogen contents vary from 4% to 5%, which are much lower than those of μc-Si:H films deposited with RF-PECVD technique. This implies that μc-Si:H thin films deposited with VHF-PECVD technique usually have good stability under light-soaking. 展开更多
关键词 VHF-PECVD technique hydrogenated microcrystalline silicon role of hydrogen optical emission spectroscopy
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Effects of ratio of hydrogen flow on microstructure of hydrogenated microcrystalline silicon films deposited by magnetron sputtering at 100 ℃
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作者 WANG Lin-qing ZHOU Yong-tao +1 位作者 WANG Jun-jun LIU Xue-qin 《Journal of Central South University》 SCIE EI CAS CSCD 2019年第10期2661-2667,共7页
Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor ... Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation. 展开更多
关键词 hydrogenated microcrystalline silicon films radio frequency magnetron sputtering ratio of hydrogen flow low temperature MICROSTRUCTURE
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Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
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作者 李志刚 龙世兵 +4 位作者 刘明 王丛舜 贾锐 闾锦 施毅 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第3期795-798,共4页
The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystal... The early stages of hydrogenated nanocrystalline silicon (nc-Si:H) films deposited by plasma-enhanced chemical vapour deposition were characterized by atomic force microscopy. To increase the density of nanocrystals in the nc-Si:H films, the films were annealed by rapid thermal annealing (RTA) at different temperatures and then analysed by Raman spectroscopy. It was found that the recrystallization process of the film was optimal at around 1000℃. The effects of different RTA conditions on charge storage were characterized by capacitance-voltage measurement. Experimental results show that nc-Si:H films obtained by RTA have good charge storage characteristics for nonvolatile memory. 展开更多
关键词 NC-SI hydrogenated nanocrystalline silicon charge storage rapid thermal annealing
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Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition
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作者 王金良 毋二省 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第3期848-853,共6页
The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si'H films are carefully and systematic... The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si'H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous. 展开更多
关键词 PECVD doped hydrogenated nanocrystalline silicon film MICROSTRUCTURE
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Technology of automatic cladding on internal surface of hydrogenated reactor elbow
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作者 Cul Shusen Yin Dianxiang +1 位作者 Zhao Changsheng Yang KefeiWei Lun and Yin Liang(Harbin Research Institute of Welding) 《China Welding》 EI CAS 1995年第1期11-18,共8页
A newly developed automatic spiral cladding machine for internal surface of hydrogenated reactor elbow is introduced.Workpiece being welded is rotated at various speeds and fed in along axial direction.TIG welding pro... A newly developed automatic spiral cladding machine for internal surface of hydrogenated reactor elbow is introduced.Workpiece being welded is rotated at various speeds and fed in along axial direction.TIG welding process with filler metal is applied with this machine.Welding is performed in flat position. The machine is intellectually controlled by a microprocessor. Torch waving width and welding speed is varied according to a formula,that the product of waving width and welding speed is constant. So the thickness of cladding layers at different points is uniform. The requirements of hydrogenation to cladding are conformed with this machine. 展开更多
关键词 SURFACING ELBOW hydrogenated reactor TIG welding welding machine
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Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD
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作者 郭玉 张溪文 韩高荣 《Plasma Science and Technology》 SCIE EI CAS CSCD 2007年第2期177-180,共4页
Hydrogenated amorphous silicon (a-Si: H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD) in (SiH4+H2) atmosphere at room te... Hydrogenated amorphous silicon (a-Si: H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD) in (SiH4+H2) atmosphere at room temperature. Results of the thickness measurement, SEM (scanning electron microscope), Raman, and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage, the deposition rate and network order of the films increase, and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films. The UV-visible transmission spectra show that with the decrease in SiH4/ (SiHn+H2) the thin films' band gap shifts from 1.92 eV to 2.17 eV. These experimental results are in agreement with the theoretic analysis of the DBD discharge. The deposition of a-Si: H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si: H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment. 展开更多
关键词 DBD-CVD room temperature hydrogenated amorphous silicon films
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Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors
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作者 郑和梅 孙顺明 +5 位作者 刘浩 还亚炜 杨建国 朱宝 刘文军 丁士进 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第12期49-51,共3页
A capping layer for black phosphorus(BP) field-effect transistors(FETs) can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. W... A capping layer for black phosphorus(BP) field-effect transistors(FETs) can provide effective isolation from the ambient air; however, this also brings inconvenience to the post-treatment for optimizing devices. We perform low-temperature hydrogenation on Al2 O3 capped BP FETs. The hydrogenated BP devices exhibit a pronounced improvement of mobility from 69.6 to 107.7 cm2 v-1 s-1, and a dramatic decrease of subthreshold swing from8.4 to 2.6 V/dec. Furthermore, high/low frequency capacitance-voltage measurements suggest reduced interface defects in hydrogenated BP FETs. This could be due to the passivation of interface traps at both Al2 O3/BP and BP/SiO2 interfaces with hydrogen revealed by secondary ion mass spectroscopy. 展开更多
关键词 Performance Improvement in hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors BP Al
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Effect of Chromium on Structure and Tribological Properties of Hydrogenated Cr/a-C:H Films Prepared via a Reactive Magnetron Sputtering System
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作者 刘龙 周升国 +2 位作者 刘正兵 王跃臣 马利秋 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第2期92-96,共5页
Hydrogenated Cr-incorporated carbon films (Cr/a-C:H) are deposited successfully by using a dc reactive mag- netron sputtering system. The structure and mechanical properties of the as-deposited Cr/a-C:H films are ... Hydrogenated Cr-incorporated carbon films (Cr/a-C:H) are deposited successfully by using a dc reactive mag- netron sputtering system. The structure and mechanical properties of the as-deposited Cr/a-C:H films are characterized systematically by field-emission scanning electron microscope, x-ray diffraction, Raman spectra, nanoindentation and scratch. It is shown that optimal Cr metal forms nanocrystalline carbide to improve the hardness, toughness and adhesion strength in the amorphous carbon matrix, which possesses relatively higher nano-hardness of 15. 7 CPa, elastic modulus of 126.8 GPa and best adhesion strength with critical load (Lc) of 36 N for the Cr/a-C:H film deposited at CH4 flow rate of 20sccm. The friction and wear behaviors of as-deposited Cr/a-C:H films are evaluated under both the ambient air and deionized water conditions. The results reveal that it can achieve superior low friction and anti-wear performance for the Cr/a-C:H film deposited at CH4 flow rate of 20sccm under the ambient air condition, and the friction coetllcient and wear rate tested in deionized water condition are relatively lower compared with those tested under the ambient air condition for each film. Superior combination of mechanical and tribological properties for the Cr/a-C:H film should be a good candidate for engineering applications. 展开更多
关键词 of CR Effect of Chromium on Structure and Tribological Properties of hydrogenated Cr/a-C:H Films Prepared via a Reactive Magnetron Sputtering System in on
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BOND STRUCTURE OF HYDROGENATED DIAMOND LIKE CARBON FILMS DEPOSITED BY PLASMA BASED ION IMPLANTATION
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作者 G.Li,L.F.Xia ,X.X.Ma,Y.Sun and Z.J.Zhan Schoolof Materials Science and Engineering, Harbin Institute of Technology , Harbin 150001 ,China 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1999年第4期551-556,共6页
The bondstructureofhydrogenated diamond likecarbon( DLC) filmsdeposited with plasmabased ionimplantation ( PBII) wascharacterized by Raman spectroscopy andcore level band and valenceband spectrum of XPS. Theresults... The bondstructureofhydrogenated diamond likecarbon( DLC) filmsdeposited with plasmabased ionimplantation ( PBII) wascharacterized by Raman spectroscopy andcore level band and valenceband spectrum of XPS. Theresultsshow thatthe hydrogenated carbon filmspre pared with lower pulse bias, especially zero bias, display polymer like feature. The DLCfilms deposited with 15 kVpulsebiascontainsthehighestdensityofsp3 bonds. Thecore lev elband ( C1s) spectra of allfilmsshifttowardlow bindingenergy after4kVAr+ ion bom barding. The valenceband spectra of hydrogenated DLCfilmsarequite differentfrom thatof diamond and graphite. However, afterion bombarding, besidetwosingle peaksatabout17 0 eVand 12 5 eV(similarto graphite) ,two new sharp peaksappearatabout21 3 eVand 8 0 eV,respectively. Thepeak at8 0 eVcan beconsidertothecontribution duetothe actingofimplanted argon on C Cbondsand C Hbondsin thefilms. 展开更多
关键词 hydrogenated DLCfilms core level band valence band Raman spec troscopy PBII
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Tribological behaviors of hydrogenated diamond-like carbon films in different testing environments
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作者 CHEN Jian-min LI Hong-xuan +2 位作者 XU Tao ZHOU Hui-di LIU Hui-wen 《中国有色金属学会会刊:英文版》 CSCD 2004年第z1期341-347,共7页
Hydrogenated diamond-like carbon (DLC) films were deposited on Si substrate using plasma enhanced chemical vapor deposition(PECVD) technique with CH4 plus H2 as the feedstock. The tribological properties of the hydrog... Hydrogenated diamond-like carbon (DLC) films were deposited on Si substrate using plasma enhanced chemical vapor deposition(PECVD) technique with CH4 plus H2 as the feedstock. The tribological properties of the hydrogenated DLC films were measured on a ball-on-disk tribometer in different testing environments (humid air,dry air, dry O2, dry Ar and dry N2 ) sliding against Si3 N4 balls. The friction surfaces of the films and Si3 N4 balls were observed on a scanning electron microscope (SEM) and investigated by X-ray photoelectron spectroscopy (XPS). The results show that the tribological properties of the hydrogenated DLC films are strongly dependent on the testing environments. In dry Ar and dry N2 environments, the hydrogenated DLC films provide a superlow friction coefficient of about 0. 008 -0.01 and excellent wear resistance (wear life of above 56 km). In dry air and dry O2, the friction coefficient is increased to 0. 025 - 0.04 and the wear life is decreased to about 30 km. When sliding in moist air, the friction coefficient of the films is further increased to 0. 08 and the wear life is decreased to 10. 4 km. SEM and XPS analyses show that the tribological behaviors appear to rely on the transferred carbon-rich layer processes on the Si3 N4 balls and on the friction-induced oxidation of the films controlled by the nature of the testing environments. 展开更多
关键词 hydrogenated DLC films tribological behaviors testing environments PECVD
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Electronic and Optical Properties of Hydrogenated Si Clusters
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作者 刘光华 邓小燕 王秀清 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2009年第9期1093-1098,共6页
The geometric, electronic, and photoabsorption properties of some hydrogenated silicon clusters are investigated. The density functional theory with generalized gradient approximation fimctional is applied. Our study ... The geometric, electronic, and photoabsorption properties of some hydrogenated silicon clusters are investigated. The density functional theory with generalized gradient approximation fimctional is applied. Our study shows that the geometric structures of them relax with their increasing sizes. Synchronously, the polarizations of Si-H bonds become weak slowly but overlap populations increase. In Mulliken population analysis, we find a distinctive passivation effect (some electrons are transferred from outer Si atoms to the central Si with four-coordinate Si atoms). Owing to the quantum confinement, the energy gap and the lowest excitation energy increase with the decreasing sizes. For nanometer scale cluster, the transition from the highest occupied molecular orbital to the lowest unoccupied molecular orbital state is usually prohibited. 展开更多
关键词 hydrogenated Si cluster density functional theory passivation effect
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