Exploring magneto-electric nanoparticles(MENPs):a platform for implanted deep brain stimulation

Towards implanted deep brain stimulation(D B S):The human brain i s a complex network of 86 billion neurons and 85 billion nonneuronal cells and they are coordinated in a well-defined ratio(1:1)which is required for desired body functions.The connectivity among neuronal cells secretes neurotransmitters(e.g.,dopamine)to establish a perfect connection between the brain and a peripheral system i.e.,motor coordination.

An ensemble learning classifier to discover arsenene catalysts with implanted heteroatoms for hydrogen evolution reaction

Accurate regulation of two-dimensional materials has become an effective strategy to develop a wide range of catalytic applications.The introduction of heterogeneous components has a significant impact on the performance of materials,which makes it difficult to discover and understand the structure-property relationships at the atomic level.Here,we developed a novel and efficient ensemble learning classifier with synthetic minority oversampling technique(SMOTE) to discover all possible arsenene catalysts with implanted heteroatoms for hydrogen evolution reaction(HER).A total of 850 doped arsenenes were collected as a database and 140 modified arsenene materials with different doping atoms and doping sites were identified as promising candidate catalysts for HER,with a machine learning prediction accuracy of 81%.Based on the results of machine learning,we proposed 13 low-cost and easily synthesized two-dimensional Fe-doped arsenene catalytic materials that are expected to contribute to high-efficient HER.The proposed ensemble method achieved high prediction accuracy,but millions of times faster to predict Gibbs free energies and only required a small amount of data.This study indicates that the presented ensemble learning classifier is capable of screening high-efficient catalysts,and can be further extended to predict other two-dimensional catalysts with delicate regulation.

Structural Characterization of Carbon-implanted GaSb

Ion implantation induced damage in GaSb and its removal by rapid thermal annealing(RTA)have been investigated by Raman spectroscopy.The evolution of the Raman modes as a function of implantation fluence,annealing temperature and time has been analyzed.Results indicate that a lattice quality that is close to as-grown GaSb has been obtained by annealing the implanted samples at 500℃for 45 s.However,consequent surface analyses by scanning electron microscope(SEM)and atomic force microscope(AFM)show that a heavily perturbed layer contains voids due to the outdifiusion of Sb atoms on the surface remains.Mechanism of the damage recovery and the structure of the implanted layer are discussed based on the experimental results.

Effect of Implanted Chip System on Blood Pressure Regulation in Rabbits

Objective: To evaluate the efficiency of an implanted chip system on blood pressure regulation. Methods: The mean arterial pressure (MAP) and heart rate (HR) were recorded in anesthetized rabbits. Based on the set point theory, an implanted chip system was designed to regulate the blood pressure by stimulating the aortic depressor nerve (ADN) according to the feedback of blood pressure. The blood pressure regulation induced by the implanted chip system was carried out twice (lasted for 15 min and 60 min respectively) and the change of MAP and HR during the regulation was compared with the control. Results: There was a significant decrease of MAP during the first regulation ([-32.0 ± 6.6] mmHg) and second regulation ([-27.4 ± 6.2] mmHg) compared with the control (P<0.01). The HR was also significantly decreased during regulation compared with the control. Both MAP and HR returned to the baseline immediately without rebound after the regulation ceased. Conclusion: The implanted chip system can regulate the blood pressure successfully and keep the blood pressure in a lower constant level without adaptation.

Inhibitory activity of polysaccharide extracts from three kinds of edible fungi on proliferation of human hepatoma SMMC-7721 cell and mouse implanted S180 tumor

AIM To determine the activities ofpolysaccharide extracts from Flammulina velutipes (Curt. ex Fr. ) Sing (FV), Lentinusedodes (LE) and Agaricus bisporus Sing (AB)on the proliferation of human hepatoma SMMC-7721 cells in vitro and on mouse implanted S-180tumors in vivo.METHODS The polysaccharide extracts were isolated from the fruit bodies of FV, LE and AB by the methods of hot-water extraction, Sevag’sremoval of proteins, ethanol precipitation,trypsin digestion and ethanol fractionalprecipitation. Human hepatoma SMMC-7721 cells were treated with 50 mg/L Polysaccharide extracts, and the mitosis index, mitochondria activity and cell proliferation were detected at different times in both control and experimental groups. The mice with S-180 implanted tumors were injected with the polysaccharide extracts at 24 mg/ kg body weight for 9 d and the tumorweight was measured on the 15th day.RESULTS The mitosis index of hepatoma cells in vitro could be significantly decreased by treatment with the polysaccharide extracts fromthe three kinds of edible fungi (P < 0 .005 ). Thecell numbers and mitochondria activity of SMMC7721 cells treated with polysaccharide extracts were lower than those in control groups (P <0.005). The inhibition rates of polysaccharide extracts against implanted S-180 tumors in mice were 52.8%, 56.6% and 51 .9% respectivelycompared with that in c0ntrol gr0ups.CONCLUSI0N The POIysaccharide extractsfrom the three kinds of edible fungi could inhibitnot only the Cultured malignant cells in vitfO butalso impIanted Sl80 tum0r i0 vivo.

Origin of Photoluminescence of Neodymium-Implanted Silicon

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.

Theoretical Investigation of Pinch off Voltage of Box-Like Ion-Implanted 4H-SiC MESFETs

A precise theoretical calculation off the pinch of voltage of the box-like ion implantation 4H-SiC MESFETs is investigated with the consideration of the effects of the ion-implanted channel and the depth of MESFETs channel.The implant depth profile is simulated using the Monte Carlo simulator TRIM.The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.

Role of MR-DWI and MR-PWI in the radiotherapy of implanted pulmonary VX-2 carcinoma in rabbits

Objective： To detect the activity of tumor cells and tumor blood flow before and after the radiotherapy of implanted pulmonary VX-2 carcinoma in rabbit models by using magnetic resonance diffusion-weighted imaging（MR-DWI） and magnetic resonance perfusion weighted imaging（MR-PWI）, and to evaluate the effectiveness and safety of the radiotherapy based on the changes in the MR-DWI and MR-PWI parameters at different treatment stages.Methods： A total of 56 rabbit models with implanted pulmonary VX-2 carcinoma were established, and then equally divided into treatment group and control group. MR-DWI and MR-PWI were separately performed using a Philips Acheiva 1.5T MRI machine（Philips, Netherland）. MRI image processing was performed using special perfusion software and the WORKSPACE advanced workstation for MRI. MRDWI was applied for the observation of tumor signals and the measurement of apparent diffusion coefficient（ADC） values; whereas MR-PWI was used for the measurement of wash in rate（WIR）, wash out rate（WOR）, and maximum enhancement rate（MER）. The radiation treatment was performed using Siemens PRIMUS linear accelerator. In the treatment group, the radiotherapy was performed 21 days later on a once weekly dosage of 1,000 c Gy to yield a total dosage of 5,000 c Gy.Results： The ADC parameters in the region of interest on DWI were as follows： on the treatment day for the implanted pulmonary VX-2 carcinoma, the t values at the center and the edge of the lesions were 1.352 and 1.461 in the treatment group and control group（P〉0.05）. During weeks 0-1 after treatment, the t values at the center and the edge of the lesions were 1.336 and 1.137（P〉0.05）. During weeks 1-2, the t values were 1.731 and 1.736（P〈0.05）. During weeks 2-3, the t values were 1.742 and 1.749（P〈0.05）. During weeks 3-4, the t values were 2.050 and 2.127（P〈0.05）. During weeks 4-5, the t values were 2.764 and 2.985（P〈0.05）. The ADC values in the treatment group were significantly higher than in the control group. After the radiotherapy（5,000 c Gy）, the tumors remarkably shrank, along with low signal on DWI, decreased signal on ADC map, and remarkably increased ADC values. As shown on PWI, on the treatment day for the implanted pulmonary VX-2 carcinoma, the t values of the WIR, WOR, and MER at the center of the lesions were 1.05, 1.31, and 1.33 in the treatment group and control group（P〉0.05）; in addition, the t values of the WIR, WOR, and MER at the edge of the lesions were 1.35, 1.07, and 1.51（P〉0.05）. During weeks 0-1 after treatment, the t values of the WIR, WOR, and MER at the center of the lesions were 1.821, 1.856, and 1.931（P〈0.05）; in addition, the t values of the WIR, WOR, and MER at the edge of the lesions were 1.799, 2.016, and 2.137（P〈0.05）. During weeks 1-1 after treatment, the t values of the WIR, WOR, and MER at the center of the lesions were 2.574, 2.156, and 2.059（P〈0.05） and the t values of the WIR, WOR, and MER at the edge of the lesions were 1.869, 2.058, and 2.057（P〈0.05）. During weeks 2-3 after treatment, the t values of the WIR, WOR, and MER at the center of the lesions were 2.461, 2.098, and 2.739（P〈0.05） and the t values of the WIR, WOR, and MER at the edge of the lesions were 2.951, 2.625, and 2.154（P〈0.05）. During weeks 3-4 after treatment, the t values of the WIR, WOR, and MER at the center of the lesions were 2.584, 2.107, and 2.869（P〈0.05） and the t values of the WIR, WOR, and MER at the edge of the lesions were 2.057, 2.637, and 2.951（P〈0.05）. During weeks 4-5 after treatment, the t values of the WIR, WOR, and MER at the center of the lesions were 2.894, 2.827, and 3.285（P〈0.05） and the t values of the WIR, WOR, andMER at the edge of the lesions were 3.45, 3.246, and 3.614（P〈0.05）. After the radiotherapy（500 c Gy）, the tumors shrank on the T1 WI, WIR, WOR, and MER; meanwhile, the PWI parameter gradually decreased and reached its minimum value.Conclusions： MR-DWI and MR-PWI can accurately and directly reflect the inactivation of tumor cells and the tumor hemodynamics in rabbit models with implanted pulmonary VX-2 carcinoma, and thus provide theoretical evidences for judging the clinical effectiveness of radiotherapy for the squamous cell carcinoma of the lung.

An Implanted Closed-loop Chip System for Heart Rate Control:System Design and Effects in Conscious Rats

Objective： To evaluate the efficiency of an implanted chip system for the control of heart rate （HR）. Methods： The HR was recorded in six conscious Sprague-Dawley （SD） rats. An implanted chip system was designed to regulate the HR by stimulating the right cervical vagus nerve according to the feedback of real time HR. Each rat was subjected to 30-min regulation and 30-min recovery. The change of HR during the regulation period was compared with the control. The ECG was recorded during the experiment for 24 h. Results： The ECG signals were successfully recorded during the experiment. The HR was significantly decreased during the period of regulation compared with control （-79.3 ± 34.5, P 〈 0.01, n = 6） and then recovered to normal after regulation. Conclusion： The described implanted chip system can regulate the HR to a designated set point.

A Preliminary Study on DNA Mutation Induction of Maize Pollen Implanted by Low Energy N^+ Beam

The maize pollens were implanted with seven different doses of 30 keV N+ beam respectively, The genomic DNA polymorphism from treated pollens were analyzed with 104 primers by using RAPD respectively. The results showed that N^+ beam-induced mutation of maize pollens can result in the change of their DNA bases. The mutation is not properly random and its frequency increases with a rise in 30 keV N+ beam doses. It is conformed with A-G transformation, which is one of the most important factors in DNA bases induced by N+ beam.

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650 ℃annealing for both p- and n-type samples. Atomic force microscopy （AFM） is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650 ℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface axe investigated using x-ray photoelectron spectroscopy （XPS）. The results of C ls and Si 2p core-level spectra axe presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.

Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.

Interleukin-18 suppresses tumor growth and induces tumor cells apoptosis on implanted Lewis lung cancer

Objective： The aim of our study was to investigate the effects of interleukin-18 （IL-18） on implanted Lewis lung cancer in suppressing tumor growth and inducing tumor cells apoptosis. Methods： One week after hypodermic inoculation of Lewis cells, sixteen tumor-bearing syngeneic mice were randomly divided into two groups. The mice in the treatment group were intrapedtoneal injected with the IL-18, in the control group were intrapedtoneal injected with normal saline. The health conditions of the mice were measured, the morphology of the tumors was studied and the apoptosis of implanted lung cancer cells was detected by TUNEL to evaluated the effects of IL-18. Results： IL-18 had no significant effects on the health condi- tions of the mice, but it could suppress the implanted tumor growth （inhibition rate was 75%） and induce tumor cells apoptosis. Conclusion： IL-18 can suppress the implanted Lewis lung cancer cells by way of inducing tumor cells apoptosis. It could be used as a new strategy for lung cancer.

H-ion Irradiation-induced Annealing in He-ion Implanted 4H-SiC

Radiation-induced defect annealing in He+ ion-implanted 4H-SiC via H+ ion irradiation is investigated by Raman spectroscopy. There are 4H-SiC wafers irradiated with 230 keV He+ ions with fluences ranging from cm−2 to cm−2 at room temperature. The post-implantation samples are irradiated by 260 keV H+ ions at a fluence of cm−2 at room temperature. The intensities of Raman lines decrease after He implantation, while they increase after H irradiation. The experimental results present that the magnitude of Raman line increment is related to the concentration of pre-existing defects formed by He implantation. A strong new peak located near 966 cm−1, which is assigned to 3C-SiC LO () phonon, is found in the He-implanted sample with a fluence of cm−2 followed by H irradiation. However, for the He-implanted sample with a fluence of cm−2 followed by H irradiation, no 3C-SiC phonon vibrations are found. The detailed reason for H irradiation-induced phase transformation in the He-implanted 4H-SiC is discussed.

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.

Mechanical force enhanced bony formation in defect implanted with calcium sulphate cement

To improve the osteogenic property of bone repairing materials and to accelerate bone healing are major tasks in bone biomaterials research. The objective of this study was to investigate if the mechanical force could be used to accelerate bone formation in a bony defect in vivo. The calcium sulfate cement was implanted into the left distal femoral epiphyses surgically in 16 rats. The half of rats were subjected to external mechanical force via treadmill exercise, the exercise started at day 7 postoperatively for 30 consecutive days and at a constant speed 8 m·min-1 for 45 min·day-1, while the rest served as a control. The rats were scanned four times longitudinally after surgery using microcomputed tomography and newly formed bone was evaluated. After sacrificing, the femurs had biomechanical test of three-point bending and histological analysis. The results showed that bone healing under mechanical force were better than the control with residual defect areas of 0.64±0.19 mm2 and 1.78±0.39 mm2（P〈0.001）, and the ultimate loads to failure under mechanical force were 69.56±4.74 N, stronger than the control with ultimate loads to failure of 59.17±7.48 N（P=0.039）. This suggests that the mechanical force might be used to improve new bone formation and potentially offer a clinical strategy to accelerate bone healing.

Effect of heat treatment on surface composition of hydrogen implanted C-SiC coatings

C-SiC coatings were prepared on stainless steel substrate by the middle frequency magnetron sputtering （MFMS） and ion beam mixing technique. After deposition, these samples were implanted by 5 keV hydrogen ion beam at a dose of 1×1018 ion/cm2. Some samples were heat treated at different temperatures from 273 K to 1173 K separately. The surface morphology, surface concentration of the elements of the C-SiC coatings and element iron from substrate as well as their depth profiles were checked with SEM, XPS and SIMS analyses. The results show that the composition of the coatings is changed due to heat treatment at different temperatures. The C-50%SiC coating with an excellent hydrogen resistant property can act as hydrogen barrier at the temperature below 723 K. But the hydrogen resistant property of the coating becomes bad when it is used at the temperature of 1023 K.

Characteristics of N^+ Implanted Layer of 4H-SiC

The nitrogen ions implanted layer of p type 4H SiC epilayer is investigated.The fabrication processes and measurements of the implanted layer are given in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Lateral Schottky barrier diodes and transfer length method (TLM) measurement structure are made on nitrogen implanted layers for the testing.The concentration of activated donors N d is about 3 0×10 16 cm -3 .The resulting value for the activation rate in this study is 2 percent.The sheet resistance R sh is 30kΩ/□ and the resistivity ρ(R sh × d ) of the implanted layer is 0 72Ω·cm.The electron mobility calculated is about 300cm 2/(V·s) in the N implanted layer.

SURFACE SEGREGATION EFFECTS IN AL_2O_3 IMPLANTED WITH HIGH DOSE INDIUM

Implantations of 100 keV In ions to high dose of 6 ×1016 In/cm2 were performed into a-axis oriented crystals of Al2O3 held at a liquid nitrogen temperature. The implantation produced about 80nm thick amorphous surface layer. Isothermal annealing in flowing Ar gas ambient was done at the temperatures of 600, 700, 800, and 900℃ . Rutherford backscattering and channeling (RBS-C), scanning electron microscope (SEM) and reflection high energy electron diffraction (RHEED) have been employed to investigate the annealing behaviors.The indium shows anomalous diffusion in amorphous layer. The migration of indium was composed of two parts: (a) some broadening of In profile corresponding to diffusion within the amorphous layer, (b) segregation of In to surface to form In2O3 which appears as islands on the surface. When the ambient is made oxygen free, the segregated In is lost by evaporation at the surface.

STUDY OF HYDROGEN IN ANNEALED AMORPHOUS SILICON AND IMPLANTED AMORPHOUS CARBON

Hydrogen contents and its depth profiles, obtained by nuclear reaction induced by fluorine ion, have been investigated for a series of thermal annealed amorphous silicon and implanted amorphous carbon (diamond-like carbon) films. For dual layer amorphous silicon films, it is shown that hydrogen of either a-Si:H or a-SiNx:H sublayer moves obviously at different annealing conditions. For diamond-like carbon (DLC) films, measurements show that, by argon implantation, hydrogen contents decrease obviously with the increase of implanting dose. The decrease of hydrogen contents results in the decrease of diamond- like (SP3) and graphite-like (SP2) components of DLC films. But, the ratios of SP2 and SP3 increased, and the resistivities decrease with the increase of implanting dose.